公开(公告)号：US20170309560A1

公开(公告)日：2017-10-26

申请号：US15136384

申请日：2016-04-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guillaume BOUCHE ,  Jason Eugene STEPHENS ,  Tuhin GUHA NEOGI ,  Kai SUN ,  Deniz Elizabeth CIVAY ,  David Charles PRITCHARD ,  Andy WEI

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/762 ,  H01L21/3213 ,  H01L21/311 ,  H01L23/522 ,  H01L21/033

CPC classification number: H01L23/528 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/762 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76877 ,  H01L23/5226

Abstract: Semiconductor devices and methods of fabricating the semiconductor devices with cross coupled contacts using patterning for cross couple pick-up are disclosed. One method includes, for instance: obtaining an intermediate semiconductor device; performing a first lithography to pattern a first shape; performing a second lithography to pattern a second shape overlapping a portion of the first shape; processing the first shape and the second shape to form an isolation region at the overlap; and forming four regions separated by the isolation region. An intermediate semiconductor device is also disclosed.

公开(公告)号：US20200058515A1

公开(公告)日：2020-02-20

申请号：US16662091

申请日：2019-10-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Heng YANG ,  David C. PRITCHARD ,  George J. KLUTH ,  Anurag MITTAL ,  Hongru REN ,  Manjunatha G. PRABHU ,  Kai SUN ,  Neha NAYYAR ,  Lixia LEI

IPC: H01L21/308 ,  H01L27/12 ,  H01L29/66 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.