公开(公告)号：US20160104638A1

公开(公告)日：2016-04-14

申请号：US14512850

申请日：2014-10-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Axel Preusse ,  Romy Liske ,  Marcus Wislicenus ,  Robert Krause ,  Lukas Gerlich ,  Benjamin Uhlig ,  Sascha Bott

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53252 ,  C23C18/1653 ,  C23C18/54 ,  C25D3/38 ,  C25D7/123 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure.

Abstract translation: 一种方法包括提供包括凹部的半导体结构。 凹部包括接触通孔和沟槽中的至少一个。 在半导体结构上沉积第一金属层。 执行无电沉积工艺。 无电沉积工艺从半导体结构去除第一金属层的第一部分并且在半导体结构上沉积第二金属的第一层。 进行电镀工艺。 电镀工艺将第二金属的第二层沉积在第二金属的第一层上。 第一金属层的第二部分保留在半导体结构中。

公开(公告)号：US09620453B2

公开(公告)日：2017-04-11

申请号：US14512850

申请日：2014-10-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Axel Preusse ,  Romy Liske ,  Marcus Wislicenus ,  Robert Krause ,  Lukas Gerlich ,  Benjamin Uhlig ,  Sascha Bott

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L21/288 ,  C25D7/12 ,  C23C18/16 ,  C23C18/54 ,  C25D3/38

CPC classification number: H01L23/53252 ,  C23C18/1653 ,  C23C18/54 ,  C25D3/38 ,  C25D7/123 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure.