公开(公告)号：US10727251B2

公开(公告)日：2020-07-28

申请号：US16207730

申请日：2018-12-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Stefan Dünkel ,  Johannes Müller ,  Lars Müller-Meskamp

IPC: G11C11/22 ,  G11C5/12 ,  H01L21/28 ,  H01L27/1159 ,  H01L29/423 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/762 ,  H01L21/3065 ,  G11C11/16

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to rounded shaped transistors and methods of manufacture. The structure includes a gate structure composed of a metal electrode and a rounded ferroelectric material which overlaps an active area in a width direction into an isolation region.

公开(公告)号：US10163933B1

公开(公告)日：2018-12-25

申请号：US15676529

申请日：2017-08-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ralf Richter ,  Stefan Dünkel ,  Martin Trentzsch ,  Sven Beyer

IPC: H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L27/1159 ,  H01L27/11597 ,  H01L29/16 ,  H01L29/04 ,  H01L29/66 ,  H01L29/49 ,  H01L29/78 ,  H01L21/28 ,  H01L29/51

Abstract: Methods of forming a buffer layer to imprint ferroelectric phase in a ferroelectric layer and the resulting devices are provided. Embodiments include forming a substrate; forming a buffer layer over the substrate; forming a ferroelectric layer over the buffer layer; forming a channel layer over the ferroelectric layer; forming a gate oxide layer over a portion of the channel layer; and forming a gate over the gate oxide layer.