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1.发明申请Systems and methods for depositing material onto microfeature workpieces in reaction chambers 有权将物质沉积在反应室中的微型工件上的系统和方法公开(公告)号：US20050061243A1
公开(公告)日：2005-03-24
申请号：US10665908
申请日：2003-09-18
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45561
摘要： Systems and methods for depositing material onto a microfeature workpiece in a reaction chamber are disclosed herein. In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and second valves that are in fluid communication with the first gas conduit. The first and second valves are configured in a parallel arrangement so that the first gas flows through the first valve and/or the second valve. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译： 本文公开了将物质沉积在反应室中的微特征工件上的系统和方法。 在一个实施例中，系统包括具有第一气体源，耦合到第一气体源的第一气体管道，由反应室承载的第一阀组件，反应室和气体分配器的气体供应组件。 第一阀组件包括与第一气体导管流体连通的第一和第二阀。 第一和第二阀构造成并联布置，使得第一气体流过第一阀和/或第二阀。 要强调的是提供本摘要以符合要求摘要的规则。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。
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2.发明申请Atomic layer deposition method of forming an oxide comprising layer on a substrate 失效在基板上形成含氧化物层的原子层沉积方法公开(公告)号：US20060003102A1
公开(公告)日：2006-01-05
申请号：US11216897
申请日：2005-08-31
IPC分类号： C23C16/00
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
摘要翻译： 本发明包括在衬底上沉积包含层的氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附以从气态第一前体在沉积室内的基底上形成第一物质单层。 化学吸附的第一物质与有效与第一物质反应以形成第一物质单层的组分的氧化物的气态第二前体接触。 所述接触至少部分地由流动的O 3至沉积室导致，其中O 3在至少170℃的温度下在其位置处 被排放到沉积室中。 依次重复化学吸附和接触以在基底上形成含氧化物层。 考虑另外的方面和实现。
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公开(公告)号：US20060029737A1
公开(公告)日：2006-02-09
申请号：US11200275
申请日：2005-08-09
IPC分类号： C23C16/00
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
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4.发明申请Atomic layer deposition method of forming an oxide comprising layer on a substrate 失效在基板上形成含氧化物层的原子层沉积方法公开(公告)号：US20050186731A1
公开(公告)日：2005-08-25
申请号：US10783242
申请日：2004-02-19
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/469 , H01L21/8238 , H01L21/8242
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
摘要翻译： 本发明包括在衬底上沉积包含层的氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附以从气态第一前体在沉积室内的基底上形成第一物质单层。 化学吸附的第一物质与有效与第一物质反应以形成第一物质单层的组分的氧化物的气态第二前体接触。 所述接触至少部分地由流动的O 3至沉积室导致，其中O 3在至少170℃的温度下在其位置处 被排放到沉积室中。 依次重复化学吸附和接触以在基底上形成含氧化物层。 考虑另外的方面和实现。
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5.发明申请SYSTEMS AND METHODS FOR DEPOSITING MATERIAL ONTO MICROFEATURE WORKPIECES IN REACTION CHAMBERS 审中-公开将材料沉积在反应釜中的微生物工件的系统和方法公开(公告)号：US20080029028A1
公开(公告)日：2008-02-07
申请号：US11872313
申请日：2007-10-15
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/45561
摘要： Systems and methods for depositing material onto a microfeature workpiece in a reaction chamber are disclosed herein. In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and second valves that are in fluid communication with the first gas conduit. The first and second valves are configured in a parallel arrangement so that the first gas flows through the first valve and/or the second valve. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译： 本文公开了将物质沉积在反应室中的微特征工件上的系统和方法。 在一个实施例中，系统包括具有第一气体源，耦合到第一气体源的第一气体管道，由反应室承载的第一阀组件，反应室和气体分配器的气体供应组件。 第一阀组件包括与第一气体导管流体连通的第一和第二阀。 第一和第二阀构造成并联布置，使得第一气体流过第一阀和/或第二阀。 要强调的是提供本摘要以符合要求摘要的规则。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。
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公开(公告)号：US20050150460A1
公开(公告)日：2005-07-14
申请号：US11009425
申请日：2004-12-10
IPC分类号： C23C16/44 , C23C16/455 , C23C16/46 , H01L21/285 , H01L21/316 , C23C16/00
CPC分类号： H01L21/28562 , C23C16/4407 , C23C16/45544 , C23C16/46 , H01L21/0228 , H01L21/28556 , H01L21/31616 , Y10S438/903 , Y10S438/905 , Y10S438/913 , Y10S438/935
摘要： Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.
摘要翻译： 提供了活性物质的原位层沉积（ALD）破坏的系统和方法。 ALD工艺在衬底上沉积多个原子层。 前体气体通常进入反应器并与底物反应产生单层原子。 在从反应器中清除剩余的气体之后，第二个前置气体进入反应器并重复该过程。 一些前体气体的活性物质不容易从反应器中吹扫，从而增加吹扫时间并降低生产量。 从基板下游放置在反应器中的高温表面基本上破坏了活性物质。 基本上破坏活性物质允许反应器容易地清除，增加生产量。
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7.发明授权Systems and methods for depositing material onto microfeature workpieces in reaction chambers 有权将物质沉积在反应室中的微型工件上的系统和方法公开(公告)号：US07282239B2
公开(公告)日：2007-10-16
申请号：US10665908
申请日：2003-09-18
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/45561
摘要： In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and second valves that are in fluid communication with the first gas conduit. The first and second valves are configured in a parallel arrangement so that the first gas flows through the first valve and/or the second valve.
摘要翻译： 在一个实施例中，系统包括具有第一气体源，耦合到第一气体源的第一气体管道，由反应室承载的第一阀组件，反应室和气体分配器的气体供应组件。 第一阀组件包括与第一气体导管流体连通的第一和第二阀。 第一和第二阀构造成并联布置，使得第一气体流过第一阀和/或第二阀。
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公开(公告)号：US08257497B2
公开(公告)日：2012-09-04
申请号：US11009425
申请日：2004-12-10
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/4407 , C23C16/45544 , C23C16/46 , H01L21/0228 , H01L21/28556 , H01L21/31616 , Y10S438/903 , Y10S438/905 , Y10S438/913 , Y10S438/935
摘要： Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.
摘要翻译： 提供了活性物质的原位层沉积（ALD）破坏的系统和方法。 ALD工艺在衬底上沉积多个原子层。 前体气体通常进入反应器并与底物反应产生单层原子。 在从反应器中清除剩余的气体之后，第二个前置气体进入反应器并重复该过程。 一些前体气体的活性物质不容易从反应器中吹扫，从而增加吹扫时间并降低生产量。 从基板下游放置在反应器中的高温表面基本上破坏了活性物质。 基本上破坏活性物质允许反应器容易地清除，增加生产量。
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9.发明授权Atomic layer deposition method of forming an oxide comprising layer on a substrate 有权在基板上形成含氧化物层的原子层沉积方法公开(公告)号：US07329615B2
公开(公告)日：2008-02-12
申请号：US11200275
申请日：2005-08-09
IPC分类号： H04L21/31 , H04L21/469
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
摘要翻译： 本发明包括在衬底上沉积包含层的氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附以从气态第一前体在沉积室内的基底上形成第一物质单层。 化学吸附的第一物质与有效与第一物质反应以形成第一物质单层的组分的氧化物的气态第二前体接触。 所述接触至少部分地由流动的O 3至沉积室导致，其中O 3在至少170℃的温度下在其位置处 被排放到沉积室中。 依次重复化学吸附和接触以在基底上形成含氧化物层。 考虑另外的方面和实现。
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公开(公告)号：US07119034B2
公开(公告)日：2006-10-10
申请号：US11216897
申请日：2005-08-31
IPC分类号： H01L21/31
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
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