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1.发明授权Systems and methods for depositing material onto microfeature workpieces in reaction chambers 有权将物质沉积在反应室中的微型工件上的系统和方法公开(公告)号：US07282239B2
公开(公告)日：2007-10-16
申请号：US10665908
申请日：2003-09-18
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/45561
摘要： In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and second valves that are in fluid communication with the first gas conduit. The first and second valves are configured in a parallel arrangement so that the first gas flows through the first valve and/or the second valve.
摘要翻译： 在一个实施例中，系统包括具有第一气体源，耦合到第一气体源的第一气体管道，由反应室承载的第一阀组件，反应室和气体分配器的气体供应组件。 第一阀组件包括与第一气体导管流体连通的第一和第二阀。 第一和第二阀构造成并联布置，使得第一气体流过第一阀和/或第二阀。
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公开(公告)号：US08257497B2
公开(公告)日：2012-09-04
申请号：US11009425
申请日：2004-12-10
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/4407 , C23C16/45544 , C23C16/46 , H01L21/0228 , H01L21/28556 , H01L21/31616 , Y10S438/903 , Y10S438/905 , Y10S438/913 , Y10S438/935
摘要： Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.
摘要翻译： 提供了活性物质的原位层沉积（ALD）破坏的系统和方法。 ALD工艺在衬底上沉积多个原子层。 前体气体通常进入反应器并与底物反应产生单层原子。 在从反应器中清除剩余的气体之后，第二个前置气体进入反应器并重复该过程。 一些前体气体的活性物质不容易从反应器中吹扫，从而增加吹扫时间并降低生产量。 从基板下游放置在反应器中的高温表面基本上破坏了活性物质。 基本上破坏活性物质允许反应器容易地清除，增加生产量。
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3.发明授权Atomic layer deposition method of forming an oxide comprising layer on a substrate 有权在基板上形成含氧化物层的原子层沉积方法公开(公告)号：US07329615B2
公开(公告)日：2008-02-12
申请号：US11200275
申请日：2005-08-09
IPC分类号： H04L21/31 , H04L21/469
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
摘要翻译： 本发明包括在衬底上沉积包含层的氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附以从气态第一前体在沉积室内的基底上形成第一物质单层。 化学吸附的第一物质与有效与第一物质反应以形成第一物质单层的组分的氧化物的气态第二前体接触。 所述接触至少部分地由流动的O 3至沉积室导致，其中O 3在至少170℃的温度下在其位置处 被排放到沉积室中。 依次重复化学吸附和接触以在基底上形成含氧化物层。 考虑另外的方面和实现。
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公开(公告)号：US07119034B2
公开(公告)日：2006-10-10
申请号：US11216897
申请日：2005-08-31
IPC分类号： H01L21/31
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
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公开(公告)号：US07067438B2
公开(公告)日：2006-06-27
申请号：US10783242
申请日：2004-02-19
IPC分类号： H01L21/31 , H01L21/469 , H01L21/20
CPC分类号： H01L51/0516 , C23C16/40 , C23C16/45544 , H01L21/3141
摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.
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公开(公告)号：US06844260B2
公开(公告)日：2005-01-18
申请号：US10356981
申请日：2003-01-30
IPC分类号： C23C16/44 , C23C16/455 , C23C16/46 , H01L21/285 , H01L21/316 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/4407 , C23C16/45544 , C23C16/46 , H01L21/0228 , H01L21/28556 , H01L21/31616 , Y10S438/903 , Y10S438/905 , Y10S438/913 , Y10S438/935
摘要： Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.
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7.发明申请Methods of Depositing Materials Over Substrates, and Methods of Forming Layers over Substrates 有权在基板上沉积材料的方法以及在基板上形成层的方法公开(公告)号：US20090215252A1
公开(公告)日：2009-08-27
申请号：US12436936
申请日：2009-05-07
IPC分类号： H01L21/46
CPC分类号： C23C16/45525 , C23C16/40 , C23C16/448 , Y10S427/101
摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.
摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体来形成金属氧化物，以将含金属的前体引入反应室，然后前体在基材的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。
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8.发明授权Methods of depositing materials over substrates, and methods of forming layers over substrates 有权在衬底上沉积材料的方法，以及在衬底上形成层的方法公开(公告)号：US07544388B2
公开(公告)日：2009-06-09
申请号：US11404611
申请日：2006-04-13
CPC分类号： C23C16/45525 , C23C16/40 , C23C16/448 , Y10S427/101
摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.
摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体来形成金属氧化物，以将含金属的前体引入反应室，然后前体在基材的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。
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公开(公告)号：US07368381B2
公开(公告)日：2008-05-06
申请号：US11413431
申请日：2006-04-28
IPC分类号： H01L21/44
CPC分类号： C23C18/1283 , C23C18/1208 , C23C18/122 , C23C18/1245 , C23C18/125 , H01L21/02164 , H01L21/02282 , H01L21/283 , H01L21/28556 , H01L21/31 , H01L21/316 , H01L21/31612 , H01L21/318
摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.
摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包括在超临界流体内的所需材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。
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公开(公告)号：US07087525B2
公开(公告)日：2006-08-08
申请号：US10884044
申请日：2004-07-02
IPC分类号： H01L21/44
CPC分类号： C23C18/1283 , C23C18/1208 , C23C18/122 , C23C18/1245 , C23C18/125 , H01L21/02164 , H01L21/02282 , H01L21/283 , H01L21/28556 , H01L21/31 , H01L21/316 , H01L21/31612 , H01L21/318
摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture comprises a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.
摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包含超临界流体中期望材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。
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