摘要:
A memory device module in a package having externally accessible contacts includes multiple integrated memory circuits accessible to external circuitry exclusively through the contacts. An accessing circuit for each memory circuit accesses memory cells in the memory circuit for communication with the external circuitry. Each accessing circuit can be enabled to access redundant memory cells instead of inoperative memory cells by an enabling signal. An enabling circuit for each accessing circuit can output the enabling signal in response to receiving a unique set of input signals from external circuitry. Each unique set is selected with fuses in each enabling circuit, and includes row and column address strobe signals and a data signal. Upon receiving its unique set, one of the enabling circuits advantageously enables its associated accessing circuit to access redundant memory cells without the accessing circuits of the other memory circuits also being so enabled.
摘要:
A memory device module in a package having externally accessible contacts includes multiple integrated memory circuits accessible to external circuitry exclusively through the contacts. An accessing circuit for each memory circuit accesses memory cells in the memory circuit for communication with the external circuitry. Each accessing circuit can be enabled to access redundant memory cells instead of inoperative memory cells by an enabling signal. An enabling circuit for each accessing circuit can output the enabling signal in response to receiving a unique set of input signals from external circuitry. Each unique set is selected with fuses in each enabling circuit, and includes row and column address strobe signals and a data signal. Upon receiving its unique set, one of the enabling circuits advantageously enables its associated accessing circuit to access redundant memory cells without the accessing circuits of the other memory circuits also being so enabled.
摘要:
A SIMM (single in-line memory module) board is provided with a plurality of semiconductor memory devices which include, as a part of each memory device, a current spike leveling capacitor. The capacitor is on the die side of circuitry connecting the memory device to the board. By connecting the on-chip capacitors of the memory devices in parallel, sufficient capacitance is provided to stabilize current to all of the memory devices.
摘要:
A SIMM (single in-line memory module) board is provided with a plurality of integrated semiconductor memory or other integrated semiconductor circuit devices which include, as a part of each integrated circuit device, a current spike leveling capacitor. The capacitor is on the die side of circuitry connecting the device to the board. By connecting the on chip capacitors of the integrated circuit devices in parallel, sufficient capacitance is provided to stabilize current to all of the circuit devices.
摘要:
A SIMM (single in-line memory module) board is provided with a plurality of integrated semiconductor memory or other integrated semiconductor circuit devices which include, as a part of each integrated circuit device, a current spike leveling capacitor. The capacitor is on the die side of circuitry connecting the device to the board. By connecting the on-chip capacitors of the integrated circuit devices in parallel, sufficient capacitance is provided to stabilize current to all of the integrated circuit devices.
摘要:
A method and apparatus for independent redundancy programming of individual components of a multiple-component semiconductor device assembly. In the disclosed embodiment, a multiple-chip memory module includes a plurality of memory devices each having redundant circuitry therein for facilitating backend repair of those devices should a defective memory cell (or group of memory cells) be detected. The redundant circuitry in each device is responsive to a predetermined combination of programming signals applied to terminals of that device to activate a redundant column (or row) of memory cells into operation in place of a column (or row) containing a defective memory cell. In the disclosed embodiment, the predetermined combination of programming signals includes at least one signal applied to a data terminal of the device. The interconnection of individual memory devices in the multiple-device assembly is such that a predetermined combination of signals applied to predetermined terminals of the assembly, including at least one data terminal thereof, can uniquely identify an individual one of the plurality of individual memory devices in the assembly, facilitating back-end repair of the assembly without requiring disassembly thereof.
摘要:
A circuit for isolating a short-circuited integrated circuit (IC) formed on the surface of a semiconductor wafer from other ICs formed on the wafer that are interconnected with the short-circuited IC includes control circuitry within the short-circuited IC for sensing the short circuit. The control circuitry may sense the short circuit in a variety of ways, including sensing excessive current drawn by the short-circuited IC, and sensing an abnormally low or high voltage within the short-circuited IC. Switching circuitry also within the short-circuited IC selectively isolates the short-circuited IC from the other ICs on the wafer in response to the control circuitry sensing the short circuit. As a result, if the wafer is under probe test, for example, testing can continue uninterrupted on the other ICs while the short-circuited IC is isolated.
摘要:
A circuit for isolating a short-circuited integrated circuit (IC) formed on the surface of a semiconductor wafer from other ICs formed on the wafer that are interconnected with the short-circuited IC includes control circuitry within the short-circuited IC for sensing the short circuit. The control circuitry may sense the short circuit in a variety of ways, including sensing excessive current drawn by the short-circuited IC, and sensing an abnormally low or high voltage within the short-circuited IC. Switching circuitry also within the short-circuited IC selectively isolates the short-circuited IC from the other ICs on the wafer in response to the control circuitry sensing the short circuit. As a result, if the wafer is under probe test, for example, testing can continue uninterrupted on the other ICs while the short-circuited IC is isolated.
摘要:
A method and apparatus for maintaining a uniform temperature of semiconductor devices mounted on a burn-in board. A cover is positioned on the burn-in board to enclose all of the semiconductor devices mounted on the board. A plurality of such burn-in boards are then placed in a burn-in oven of conventional design for burn-in testing of the semiconductor devices. The cover prevents a non-uniform airflow along the semiconductor devices which would cause the semiconductor devices to have a non-uniform temperature distribution.
摘要:
A method and apparatus for maintaining a uniform temperature of semiconductor devices mounted on a burn-in board. A cover is positioned on the burn-in board to enclose all of the semiconductor devices mounted on the board. A plurality of such burn-in boards are then placed in a burn-in oven of conventional design for burn-in testing of the semiconductor devices. The cover prevents a non-uniform airflow along the semiconductor devices which would cause the semiconductor devices to have a non-uniform temperature distribution.