公开(公告)号：US20160104815A1

公开(公告)日：2016-04-14

申请号：US14877948

申请日：2015-10-08

Applicant: Genesis Photonics Inc.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L33/22 ,  H01L33/48 ,  H01L33/38 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

Abstract translation: 提供了具有粗糙表面的薄膜倒装芯片发光二极管（LED）及其制造方法。 首先，提供在基板的表面上具有图案化结构的基板，并使表面粗糙化。 然后在表面上形成第一半导体层; 然后在第一半导体层上形成发光结构层; 然后在发光结构层上形成第二半导体层。 第一和第二半导体层具有相反的电特性。 然后分别在第一半导体层和第二半导体层上形成第一接触电极和第二接触电极。 最后，在第一接触电极和第二接触电极上形成子座，并且移除衬底以形成具有粗糙表面的薄膜倒装芯片LED。 这里，提高了薄膜倒装芯片LED的发光效率。

公开(公告)号：US20150188014A1

公开(公告)日：2015-07-02

申请号：US14535333

申请日：2014-11-07

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Fan Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/40 ,  H01L33/42 ,  H01L33/44

Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.

Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。

公开(公告)号：US09786813B2

公开(公告)日：2017-10-10

申请号：US15423595

申请日：2017-02-03

Applicant: Genesis Photonics Inc.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L21/00 ,  H01L33/22 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

公开(公告)号：US20170148952A1

公开(公告)日：2017-05-25

申请号：US15423595

申请日：2017-02-03

Applicant: Genesis Photonics Inc.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L33/22 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

公开(公告)号：US09577154B2

公开(公告)日：2017-02-21

申请号：US14535333

申请日：2014-11-07

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Fan Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L21/00 ,  H01L33/40 ,  H01L33/44 ,  H01L33/42

CPC classification number: H01L33/40 ,  H01L33/42 ,  H01L33/44

Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.

Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。

公开(公告)号：US20150263257A1

公开(公告)日：2015-09-17

申请号：US14715581

申请日：2015-05-18

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Yen Chen ,  Yi-Fan Li ,  Han-Min Wu ,  Kuan-Chieh Huang ,  Tung-Lin Chuang ,  Sheng-Yuan Sun

IPC: H01L33/64 ,  H01L33/50 ,  H01L33/48 ,  H01L33/60

CPC classification number: H01L33/642 ,  F21K9/64 ,  F21V29/74 ,  F21Y2115/10 ,  H01L33/486 ,  H01L33/505 ,  H01L33/60 ,  H01L33/641

Abstract: A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover.

Abstract translation: 本发明的发光装置包括基底，至少一个发光元件，波长转移盖和导热结构。 发光元件设置在基座上并电连接到基座。 波长转移盖设置在基座上并覆盖发光元件。 导热结构设置在基座上并直接接触波长传输罩。

公开(公告)号：US20180033914A1

公开(公告)日：2018-02-01

申请号：US15726673

申请日：2017-10-06

Applicant: GENESIS PHOTONICS INC.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L33/22 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

公开(公告)号：US10008634B2

公开(公告)日：2018-06-26

申请号：US15726673

申请日：2017-10-06

Applicant: GENESIS PHOTONICS INC.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L21/00 ,  H01L33/22 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

公开(公告)号：US09184360B2

公开(公告)日：2015-11-10

申请号：US14715581

申请日：2015-05-18

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Yen Chen ,  Yi-Fan Li ,  Han-Min Wu ,  Kuan-Chieh Huang ,  Tung-Lin Chuang ,  Sheng-Yuan Sun

IPC: H01L33/00 ,  H01L33/64 ,  H01L33/60 ,  H01L33/50 ,  H01L33/48

CPC classification number: H01L33/642 ,  F21K9/64 ,  F21V29/74 ,  F21Y2115/10 ,  H01L33/486 ,  H01L33/505 ,  H01L33/60 ,  H01L33/641

Abstract: A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover.

公开(公告)号：US09564554B2

公开(公告)日：2017-02-07

申请号：US14877948

申请日：2015-10-08

Applicant: Genesis Photonics Inc.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/48 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

Abstract translation: 提供了具有粗糙表面的薄膜倒装芯片发光二极管（LED）及其制造方法。 首先，提供在基板的表面上具有图案化结构的基板，并使表面粗糙化。 然后在表面上形成第一半导体层; 然后在第一半导体层上形成发光结构层; 然后在发光结构层上形成第二半导体层。 第一和第二半导体层具有相反的电特性。 然后分别在第一半导体层和第二半导体层上形成第一接触电极和第二接触电极。 最后，在第一接触电极和第二接触电极上形成子座，并且移除衬底以形成具有粗糙表面的薄膜倒装芯片LED。 这里，提高了薄膜倒装芯片LED的发光效率。