摘要:
The data processing system of the present invention implements a multi-port memory cell, wherein the port functions are divided based on a timing cycle in which they may be accessed. For example, in one case, a first port may be utilized only for read operations and accessed only during a first portion of the timing cycle. Similarly, a second port may be used for read or write operations a and may be accessed only during a second portion of the timing cycle. To ensure that the multi-port memory cell functions correctly, both ports should not be accessed simultaneously. A circuit and method are implemented to ensure that both ports are not accessed simultaneously by implementing a delay function in a unique and useful manner.
摘要:
The data processing system of the present invention implements a multi-port memory cell, wherein the port functions are divided based on a timing cycle in which they may be accessed. For example, in one case, a first port may be utilized only for read operations and accessed only during a first portion of the timing cycle. Similarly, a second port may be used for read or write operations and may be accessed only during a second portion of the timing cycle. To ensure that the multi-port memory cell functions correctly, both ports should not be accessed simultaneously. A circuit and method are implemented to ensure that both ports are not accessed simultaneously by implementing a delay function in a unique and useful manner.
摘要:
The data processing system of the present invention implements a multi-port memory cell and control therefor. In response to a single clock signal, the cell is accessed during multiple, non-concurrent intervals during a single clock cycle. Each of the accesses during the clock cycle are over a different line.
摘要:
A method and apparatus is provided for implementing a memory cell array having a performance-improved critical read path using a boost amplifier configuration. The memory bit line is broken into small segments with a boost amplifier and the bit line is connected to the input of the amplifier. The output of the amplifier drives the global bit line. The amplifier is turned "on" during a "read" and turned "off" during a "write". During a read, one memory cell within one array segment is turned on. The memory cell drives the differential signal on to the local bit line pair. Also during a read, the boost amplifier which attaches to that local bit line is enabled. The boost amplifier amplifies the input signal (local bit line pair) and drives that signal on to the global bit line. Since the bit line is broken into small segments with boost amplifiers, there are many boost amplifiers attached on the global bit line. When enough signal is developed on the global bit line pair, the global sense amplifier is turned on. The bit line is thus quickly pulled to ground thereby significantly improving performance for the critical read path.
摘要:
An improved topology for multi-port memory cell layouts in which two or more bitline pairs are required for data transfers is provided. Bitlines are displaced vertically, rather than horizontally. Such vertical spacing provides improved silicon density while reducing bitline capacitance of a memory cell. Additionally, the use of vertically separated bitline pairs allows traditional transitional phase relationships between multi-port operations in multi-port memory implementations. To nullify any sensitivity to an overlapping restore operation, this improved topology includes cross-coupled ports.
摘要:
An apparatus and method for unaligned cache reads is implemented. Data signals on a system bus are remapped into a cache line wherein a plurality of data values to be read from the cache are output in a group-wise fashion. The remapping defines a grouping of the data values in the cache line. A multiplexer is coupled to each group of storage units containing the data values, wherein a multiplexer input is coupled to each storage unit in the corresponding group. A logic array coupled to each MUX generates a control signal for selecting the data value output from each MUX. The control signal is generated in response to the read address which is decoded by each logic array.
摘要:
A bit switch circuit (10) includes an amplifier stage (11) and a plurality of input stages (23,33,43,53). Each input stage (23,33,43,53) is connected to receive as inputs the signals applied to a bit line pair associated with a memory array. Each input stage (23,33,43,53) is also associated with a common node (24,34,44,54), and a select transistor (T4, T5, T6, T7). Each select transistor (T4, T5, T6, T7) responds to a select input signal to couple the respective common node (24,34,44,54) to ground. This allows the sense amplifier (11) to respond to the data signals on the bit line pair (20,21,30,31,40,41,50,51) associated with the respective input stage (23,33,43,53).
摘要:
A memory and a method for communicating therewith are implemented having a unidirectional write bus for writing to memory cells within a plurality of memory cell groups. Local bitlines associated with each of the memory cell groups communicate write data to the associated memory cell. Global bitlines coupled to all of the memory cells are decoupled from the local bitlines during a write operation. Following a write operation the local bitlines are restored by a precharge operation during which the global and local bitlines are also decoupled.
摘要:
A memory and a method for communicating therewith are implemented, the memory having a plurality of memory cell groups. Each memory cell group contains a plurality of memory cells. Memory cell groups within each subset of a plurality of subsets of memory cell groups include the same predetermined number of memory cells. During a read operation, a local bitline associated with the memory cell group from which data is being read is coupled to a global bitline. Other local bitlines, associated with the memory cell groups not being accessed during the read are decoupled from the global bitlines. Following a read, the local and global bitlines are restored by a precharge operation.
摘要:
A memory array of a plurality of memory cells accessed by either a single-ended wordline or a differential pair of wordlines emanating from a wordline decoder is improved by the inclusion of a sense amplifier circuit on the far end of the memory array from the wordline decoder, which operates to amplify the wordline signals.