公开(公告)号：US20120097859A1

公开(公告)日：2012-04-26

申请号：US13376300

申请日：2010-05-12

申请人： Gerhard Lutz ,  Lothar Strueder ,  Valentin Fedl

发明人： Gerhard Lutz ,  Lothar Strueder ,  Valentin Fedl

IPC分类号： G01T1/24 ,  H01L31/10

CPC分类号： H01L31/1136 ,  H01L31/0352

摘要： The invention relates to an operating method for a semiconductor structure (1), particularly for a detecting element, in a semiconductor detector, particularly in a blocked impurity band detector, comprising the following steps: a) generating free signal charge carriers (2) in the semiconductor detector by impinging radiation, b) collecting the radiation-generated signal charge carriers (2) in a storage area (IG) in the semiconductor structure (1), wherein the storage area (IG) forms a potential well in which the signal charge carriers (2) are captured, c) deleting the signal charge carriers (2) collected in the storage area (IG) in IG that the signal charge carriers (2) are removed from the storage area (IG), d) generating an electric tunnel field in the area of the storage area (IG), so that the signal charge carriers (2) present in the storage area (IG) can tunnel out of the potential well of the storage area (IG) using the tunnel effect, into a conduction band in which the signal charge carriers (2) are freely displaceable. The invention further relates to a corresponding semiconductor structure.

摘要翻译： 本发明涉及一种用于半导体检测器中特别是用于检测元件的半导体结构（1）的操作方法，特别是在阻塞杂质带检测器中，包括以下步骤：a）产生自由信号电荷载体（2） 所述半导体检测器通过照射辐射，b）在所述半导体结构（1）中的存储区域（IG）中收集辐射产生的信号电荷载体（2），其中所述存储区域（IG）形成潜在的阱， 电荷载体（2）被捕获，c）删除收集在IG中的信号电荷载体（2）从存储区域（IG）中移除的存储区域（IG）中的信号电荷载体（2），d） 存储区域（IG）的区域中的电通道场，使得存储在存储区域（IG）中的信号电荷载体（2）可以使用隧道效应从存储区域（IG）的潜在井中隧道出来， 变成其中信号c的导带 吊架（2）可自由移位。 本发明还涉及相应的半导体结构。

公开(公告)号：US20140008538A1

公开(公告)日：2014-01-09

申请号：US13825342

申请日：2011-08-26

申请人： Heike Soltau ,  Bianca Schweinfest ,  Gerhard Lutz ,  Ladislav Andricek ,  Lothar Strueder

发明人： Heike Soltau ,  Bianca Schweinfest ,  Gerhard Lutz ,  Ladislav Andricek ,  Lothar Strueder

IPC分类号： H01J5/18

CPC分类号： H01J5/18 ,  G01T1/2928

摘要： The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11).

摘要翻译： 本发明涉及一种用于辐射检测器（2）的辐射入口窗（10），特别是用于具有平面窗元件（11）的半导体漂移检测器（2）的辐射入口窗口（10），其对待被检测的辐射至少部分是可渗透的 通过辐射检测器（2）以及窗框（12），窗框（12）横向地框架窗元件（11），其中窗框（12）由半导体材料组成并且比窗元件（ 11）。

公开(公告)号：US4896201A

公开(公告)日：1990-01-23

申请号：US189619

申请日：1988-05-03

申请人： Josef Kemmer ,  Gerhard Lutz ,  Peter Holl ,  Lothar Strueder

发明人： Josef Kemmer ,  Gerhard Lutz ,  Peter Holl ,  Lothar Strueder

IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  H01L27/14 ,  H01L27/146 ,  H01L31/0248 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/103

CPC分类号： H01L27/14643 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

摘要： A semiconductor radiation detector has an at least partially or even completely depleted base region of a first conductivity, to which a bias voltage is applied, and has at least one output or read-out electrode at which a signal is produced by the charge carriers generated by radiation incident on the detector. The read-out or output electrode includes a highly doped region of the first or a second conductivity, onto which an insulating layer and thereupon a conducting electrode layer are applied for outputting the generated or induced signals. The voltage application to the highly doped region of the read-out or output electrode is achieved through a high impedance through the base region of the detector, from at least one electrode of the same conductivity as that of the output or read-out electrode. Thus, it is simply possible to capacitively couple the detector to external circuitry even if these external circuits have a complex structure or arrangement.

摘要翻译： 半导体辐射检测器具有至少部分或甚至完全耗尽的第一导电性的基极区域，施加偏置电压，并且具有至少一个输出或读出电极，在该电极处产生由所产生的电荷载流子产生的信号 通过入射到检测器上的辐射。 读出或输出电极包括具有第一或第二导电性的高掺杂区域，在其上施加绝缘层和随后的导电电极层以输出所产生的或感应的信号。 从至少一个与输出或读出电极的电导率相同的电极的电极，通过检测器的基极区域通过高阻抗实现对读出或输出电极的高掺杂区域的电压施加。 因此，即使这些外部电路具有复杂的结构或布置，也可以将检测器电容耦合到外部电路。

公开(公告)号：US07847230B2

公开(公告)日：2010-12-07

申请号：US11916075

申请日：2006-05-17

申请人： Gerhard Lutz ,  Lothar Strueder ,  Peter Holl

发明人： Gerhard Lutz ,  Lothar Strueder ,  Peter Holl

IPC分类号： H01L27/00 ,  H03F3/08 ,  H04N3/14 ,  H01L31/107

CPC分类号： H01L29/76816 ,  H01L27/14812 ,  H01L29/76833

摘要： The invention relates to a radiation detector (1) for detecting low-intensity radiation, especially for detecting individual photons. The radiation detector includes a plurality of rows of image cells (5) with respective pluralities of image cells (5) disposed one after the other and respective signal outputs (6). The radiation to be detected generates signal charge carriers in the individual image cells (5), the charge carriers being transported along the rows of image cells to the respective signal output (6). A plurality of output amplifiers (7) are connected in parallel to one of the signal outputs each of the individual image cell columns and amplify the signal charge carriers. The invention is characterized in that the output amplifiers (7) include respective avalanche amplifiers (8).

摘要翻译： 本发明涉及一种用于检测低强度辐射的辐射检测器（1），特别是用于检测单个光子。 辐射检测器包括多行图像单元（5），其具有彼此相继布置的相应多个图像单元（5）和相应的信号输出（6）。 待检测的辐射在各个图像单元（5）中产生信号电荷载流子，电荷载流子沿着图像单元的行被传送到相应的信号输出（6）。 多个输出放大器（7）并联连接到每个单独的图像单元列的信号输出之一并放大信号电荷载流子。 本发明的特征在于，输出放大器（7）包括相应的雪崩放大器（8）。

公开(公告)号：US07838837B2

公开(公告)日：2010-11-23

申请号：US12147768

申请日：2008-06-27

申请人： Lothar Strueder ,  Peter Holl ,  Gerhard Lutz

发明人： Lothar Strueder ,  Peter Holl ,  Gerhard Lutz

IPC分类号： H01L27/148

CPC分类号： H01L27/14812 ,  H01L27/1463 ,  H01L29/0619

摘要： The invention relates to a semiconductor detector, in particular a pnCCD detector, for radiation detection, including a guard ring (12, 14) and a readout anode (3, 4) arranged inside the guard ring (12, 14) for reading out radiation-generated signal charge carriers (e−), and also including a clearing contact (9) arranged outside the guard ring (12, 14) for removing the collected signal charge carriers (e−) from the readout anode (3, 4). According to the invention, the semiconductor detector furthermore includes a gap (15, 16) in the guard ring (12, 14) and also a controllable gate (17, 18) which is arranged over the gap (15, 16) in the guard ring (12, 14) and makes the gap (15, 16) in the guard ring (12, 14) permeable or impermeable to the signal charge carriers (e−) to be removed, depending on an electrical actuation of the gate (17, 18).

摘要翻译： 本发明涉及用于放射线检测的半导体检测器，特别是pnCCD检测器，包括设置在保护环（12,14）内的用于读出辐射的保护环（12,14）和读出阳极（3,4） 产生的信号电荷载体（e-），并且还包括布置在保护环（12,14）外部的用于从读出的阳极（3,4）去除收集的信号电荷载体（e-）的清除触点（9）。 根据本发明，半导体检测器还包括保护环（12,14）中的间隙（15,16）以及布置在护罩中的间隙（15,16）之上的可控制栅极（17,18） 环（12,14），并且使保护环（12,14）中的信号电荷载体（e-）可渗透或不可渗透的间隙（15,16）取决于栅极（17）的电致动 ，18）。

公开(公告)号：US20080001180A1

公开(公告)日：2008-01-03

申请号：US11757664

申请日：2007-06-04

申请人： Gerhard Lutz ,  Rainer Richter ,  Lothar Strueder

发明人： Gerhard Lutz ,  Rainer Richter ,  Lothar Strueder

IPC分类号： H01L31/113

CPC分类号： H01L27/14679 ,  H01L27/14603

摘要： Semiconductor detector includes semiconductor substrate (HK), source region (S), drain region (D), external gate region (G) and inner gate region (IG) for collecting free charge carriers generated in semiconductor substrate, wherein inner gate region is arranged in semiconductor substrate at least partially under external gate region to control conduction channel (K) from below as a function of the accumulated charge carriers, as well as with clear contact (CL) for the removal of the accumulated charge carriers from inner gate region, as well as with drain-clear region (DCG) that can be selectively controlled as an auxiliary clear contact or as a drain. Barrier contact (B) is arranged in a lateral direction between external gate region and drain-clear region to build up a controllable potential barrier between inner gate region and clear contact that prevents the charge carriers accumulated in inner gate region from being removed by suction from clear contact.

摘要翻译： 半导体检测器包括用于收集在半导体衬底中产生的自由电荷载流子的半导体衬底（HK），源极区（S），漏极区（D），外部栅极区（G）和内部栅极区域（IG） 至少部分地在外部栅极区域之下，以便根据累积的电荷载流子来控制从下面的导电通道（K），以及用于从内部栅极区域去除累积电荷载流子的清楚的接触（CL） 以及可以选择性地控制作为辅助清除触点或漏极的漏极清除区域（DCG）。 阻挡触点（B）沿外部栅极区域和漏极 - 清除区域之间的横向方向布置，以在内部栅极区域和透明接触之间建立可控的势垒，防止积聚在内部栅极区域中的电荷载体被吸入 明确联系。

公开(公告)号：US08461635B2

公开(公告)日：2013-06-11

申请号：US12682611

申请日：2008-10-08

申请人： Lothar Strueder ,  Gerhard Lutz

发明人： Lothar Strueder ,  Gerhard Lutz

IPC分类号： H01L31/04

CPC分类号： H01L31/119 ,  H01L27/14679 ,  H01L31/035272

摘要： The invention relates to a DEPFET transistor (1) for detecting a radio-generated signal charge (2) and for generating an electronic output signal in a manner dependent on the detected signal charge (2) according to a predetermined characteristic curve. The invention provides for the characteristic curve to have a degressive characteristic curve profile in order to combine a high measurement sensitivity in the case of small signal charges (2) with a large measurement range through to large signal charges (2).

摘要翻译： 本发明涉及一种DEPFET晶体管（1），用于根据预定特性曲线检测无线电产生的信号电荷（2）并以取决于检测到的信号电荷（2）的方式产生电子输出信号。 本发明提供了特征曲线具有递减特征曲线，以便在小信号电荷（2）与大信号电荷（2）的大测量范围的情况下组合高测量灵敏度。

公开(公告)号：US20100237392A1

公开(公告)日：2010-09-23

申请号：US12682611

申请日：2008-10-08

申请人： Lothar Strueder ,  Gerhard Lutz

发明人： Lothar Strueder ,  Gerhard Lutz

IPC分类号： H01L31/10

CPC分类号： H01L31/119 ,  H01L27/14679 ,  H01L31/035272

摘要： The invention relates to a DEPFET transistor (1) for detecting a radio-generated signal charge (2) and for generating an electronic output signal in a manner dependent on the detected signal charge (2) according to a predetermined characteristic curve. The invention provides for the characteristic curve to have a degressive characteristic curve profile in order to combine a high measurement sensitivity in the case of small signal charges (2) with a large measurement range through to large signal charges (2).

摘要翻译： 本发明涉及一种DEPFET晶体管（1），用于根据预定特性曲线检测无线电产生的信号电荷（2）并以取决于检测到的信号电荷（2）的方式产生电子输出信号。 本发明提供了特征曲线具有递减特征曲线，以便在小信号电荷（2）与大信号电荷（2）的大测量范围的情况下组合高测量灵敏度。

公开(公告)号：US09159518B2

公开(公告)日：2015-10-13

申请号：US13825342

申请日：2011-08-26

申请人： Heike Soltau ,  Bianca Schweinfest ,  Gerhard Lutz ,  Ladislav Andricek ,  Lothar Strueder

发明人： Heike Soltau ,  Bianca Schweinfest ,  Gerhard Lutz ,  Ladislav Andricek ,  Lothar Strueder

IPC分类号： H01J5/18 ,  G01T1/29

CPC分类号： H01J5/18 ,  G01T1/2928

摘要： The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11). (FIG. 1)

摘要翻译： 本发明涉及一种用于辐射检测器（2）的辐射入口窗（10），特别是用于具有平面窗元件（11）的半导体漂移检测器（2）的辐射入口窗口（10），其对待被检测的辐射至少部分是可渗透的 通过辐射检测器（2）以及窗框（12），窗框（12）横向地框架窗元件（11），其中窗框（12）由半导体材料组成并且比窗元件（ 11）。 （图。1）

公开(公告)号：US07518203B2

公开(公告)日：2009-04-14

申请号：US11757664

申请日：2007-06-04

申请人： Gerhard Lutz ,  Rainer Richter ,  Lothar Strueder

发明人： Gerhard Lutz ,  Rainer Richter ,  Lothar Strueder

IPC分类号： H01L31/08

CPC分类号： H01L27/14679 ,  H01L27/14603

摘要： Semiconductor detector includes semiconductor substrate (HK), source region (S), drain region (D), external gate region (G) and inner gate region (IG) for collecting free charge carriers generated in semiconductor substrate, wherein inner gate region is arranged in semiconductor substrate at least partially under external gate region to control conduction channel (K) from below as a function of the accumulated charge carriers, as well as with clear contact (CL) for the removal of the accumulated charge carriers from inner gate region, as well as with drain-clear region (DCG) that can be selectively controlled as an auxiliary clear contact or as a drain. Barrier contact (B) is arranged in a lateral direction between external gate region and drain-clear region to build up a controllable potential barrier between inner gate region and clear contact that prevents the charge carriers accumulated in inner gate region from being removed by suction from clear contact.

摘要翻译： 半导体检测器包括用于收集在半导体衬底中产生的自由电荷载流子的半导体衬底（HK），源极区（S），漏极区（D），外部栅极区（G）和内部栅极区域（IG） 至少部分地在外部栅极区域之下，以便根据累积的电荷载流子来控制从下面的导电通道（K），以及用于从内部栅极区域去除累积电荷载流子的清晰接触（CL） 以及可以选择性地控制作为辅助清除触点或漏极的漏极清除区域（DCG）。 阻挡触点（B）沿外部栅极区域和漏极 - 清除区域之间的横向方向布置，以在内部栅极区域和透明接触之间建立可控的势垒，防止积聚在内部栅极区域中的电荷载体被吸入 明确联系。