利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.037 秒)

    Substrate support pedestal
    8.
    发明授权
    Substrate support pedestal 有权
    基板支撑基座

    公开(公告)号：US06490145B1

    公开(公告)日：2002-12-03

    申请号：US09908819

    申请日：2001-07-18

    申请人： Arnold V. Kholodenko ,  You Wang ,  Tony S. Kaushal ,  Semyon L. Kats

    发明人： Arnold V. Kholodenko ,  You Wang ,  Tony S. Kaushal ,  Semyon L. Kats

    IPC分类号： H01T2300

    CPC分类号： H01L21/6833 ,  H01L21/6831

    摘要： A ceramic substrate support and methods for fabricating the same are provided. In one embodiment, a ceramic substrate support for supporting a substrate includes a ceramic body and a porous member disposed therein. The ceramic body generally has an upper portion and a lower portion. The upper portion includes a support surface while the lower portion includes a bottom surface. At least one passage is disposed in the lower portion of the ceramic body. A first end of the passage is at least partially closed by the upper portion of the ceramic body. At least one outlet is disposed through the portion of the ceramic body through the upper portion of the ceramic body and fluidly couples the passage to the support surface.

    摘要翻译： 提供陶瓷基板支撑件及其制造方法。 在一个实施例中，用于支撑衬底的陶瓷衬底支撑件包括陶瓷体和设置在其中的多孔构件。 陶瓷体通常具有上部和下部。 上部包括支撑表面，而下部包括底面。 至少一个通道设置在陶瓷体的下部。 通道的第一端至少部分地被陶瓷体的上部封闭。 至少一个出口通过陶瓷体的上部穿过陶瓷体的部分，并将通道流体地连接到支撑表面。

    Low temperature aerosol deposition of a plasma resistive layer
    9.
    发明授权
    Low temperature aerosol deposition of a plasma resistive layer 有权
    等离子体电阻层的低温气溶胶沉积

    公开(公告)号：US07479464B2

    公开(公告)日：2009-01-20

    申请号：US11552013

    申请日：2006-10-23

    申请人： Jennifer Y. Sun ,  Elmira Ryabova ,  Senh Thach ,  Xi Zhu ,  Semyon L. Kats

    发明人： Jennifer Y. Sun ,  Elmira Ryabova ,  Senh Thach ,  Xi Zhu ,  Semyon L. Kats

    IPC分类号： H01L21/31

    CPC分类号： C23C24/04 ,  C23C14/564 ,  C23C16/4404

    摘要： Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.

    摘要翻译： 本发明的实施例提供了一种在半导体室部件/部件上的等离子体电阻层的低温气溶胶沉积的方法。 在一个实施方案中，用于低温气溶胶沉积的方法包括在气溶胶发生器中形成细颗粒气溶胶，将气溶胶发生器中的气溶胶分配到处理室中朝向基板的表面，将基板温度维持在约0度 摄氏度和50摄氏度，并且在基底表面上从气溶胶中的材料沉积一层。

    METHODS AND APPARATUS FOR IMPROVING FLOW UNIFORMITY IN A PROCESS CHAMBER
    10.
    发明申请
    METHODS AND APPARATUS FOR IMPROVING FLOW UNIFORMITY IN A PROCESS CHAMBER 审中-公开
    改进流程室流量均匀性的方法和装置

    公开(公告)号：US20100081284A1

    公开(公告)日：2010-04-01

    申请号：US12240090

    申请日：2008-09-29

    申请人： AJIT BALAKRISHNA ,  Aniruddha Pal ,  James D. Carducci ,  Semyon L. Kats ,  Shahid Rauf

    发明人： AJIT BALAKRISHNA ,  Aniruddha Pal ,  James D. Carducci ,  Semyon L. Kats ,  Shahid Rauf

    IPC分类号： H01L21/3065 ,  C23F1/08 ,  C23C16/00

    CPC分类号： H01J37/32449 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/321 ,  H01J37/3244

    摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber.

    摘要翻译： 本文提供了处理衬底的方法和装置。 在一些实施例中，用于处理衬底的装置包括流量均衡器，其被配置为控制处理室的处理容积和排气口之间的气体流。 流量均衡器包括至少一个限制器板，其被配置为设置在接近要处理的基板的表面的平面中，并且限定了至少一个限制器板的边缘与腔室壁中的一个之间的方位不均匀的间隙 或安装在处理室中时的基板支撑件。