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8 条记录 (耗时 0.037 秒)

    Substrate support tolerant to thermal expansion stresses
    6.
    发明授权
    Substrate support tolerant to thermal expansion stresses 失效
    基材支持耐热膨胀应力

    公开(公告)号：US06583980B1

    公开(公告)日：2003-06-24

    申请号：US09641536

    申请日：2000-08-18

    申请人： You Wang ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Alexander M. Veytser ,  Wing L. Cheng

    发明人： You Wang ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Alexander M. Veytser ,  Wing L. Cheng

    IPC分类号： H01G300

    CPC分类号： H01L21/6831

    摘要： A chamber 30 for processing a substrate 25 comprises a support 55 including an electrode 70 at least partially covered by a dielectric 60 that is permeable to electromagnetic energy. The electrode 70 may be chargeable to electrostatically hold the substrate 25, to couple energy to a gas in the chamber 30, or both. A base 90 below the support 55 comprises a slot 95 that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

    摘要翻译： 用于处理基板25的室30包括支撑件55，其包括至少部分地被电介质60覆盖的电极70，电介质60可透过电磁能。 电极70可以被充电以静电保持衬底25，以将能量耦合到腔室30中的气体，或两者。 支撑件55下方的底座90包括可适于用作热膨胀槽以减少热应力的槽95。

    High temperature electrical connector
    7.
    发明授权
    High temperature electrical connector 失效
    高温电连接器

    公开(公告)号：US06736668B1

    公开(公告)日：2004-05-18

    申请号：US09663864

    申请日：2000-09-15

    申请人： Arnold V. Kholodenko ,  Senh Thach ,  Wing L. Cheng ,  Alvin Lau ,  Dennis S. Grimard

    发明人： Arnold V. Kholodenko ,  Senh Thach ,  Wing L. Cheng ,  Alvin Lau ,  Dennis S. Grimard

    IPC分类号： H01R1300

    CPC分类号： H01R13/533 ,  H01R2201/24

    摘要： An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.

    摘要翻译： 电耦合器包括具有上端和下端的内连接器，限定内连接器的绝缘外连接器元件和设置在内连接器的上端上的导热凸缘和用于传导来自电导体的热的外连接器。 电导体可以用于半导体晶片处理的衬底支撑件中。 衬底支撑件包括具有嵌入其中的电极的卡盘体，以及耦合到电极并从所述卡盘体突出的上部阳连接器。 具有电耦合器的冷却板位于卡盘主体附近。 上部阳连接器插入电耦合器中，并且耦合到电耦合器的下部的电源卡住并将晶片偏置到所述卡盘的上表面。 导热凸缘传导和传递从上阳连接器和电耦合器产生的热量到冷却板。

    Process chamber having multiple gas distributors and method
    8.
    发明授权
    Process chamber having multiple gas distributors and method 失效
    具有多个气体分配器和方法的处理室

    公开(公告)号：US06676760B2

    公开(公告)日：2004-01-13

    申请号：US09930938

    申请日：2001-08-16

    申请人： Arnold V. Kholodenko ,  Dan Katz ,  Wing L. Cheng

    发明人： Arnold V. Kholodenko ,  Dan Katz ,  Wing L. Cheng

    IPC分类号： C23C1600

    CPC分类号： C23C16/45519 ,  C23C16/455

    摘要： A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

    摘要翻译： 基板处理室具有用于支撑基板的基板支撑件和围绕基板支撑件的排气导管。 第一工艺气体分配器以第一流量引导诸如非反应性气体的第一工艺气体，例如基板周边和朝向排气管道，以在衬底周围形成非反应性气体帘幕。 第二工艺气体分配器以比第一流量低的第二流量向衬底的中心部分引导第二工艺气体，例如反应性CVD或蚀刻剂气体。 气体激发器激励腔室中的第一和第二处理气体。 控制器操作衬底支撑件，气体流量计，气体激励器和节流阀，以处理通电气体中的衬底。