公开(公告)号：US06490144B1

公开(公告)日：2002-12-03

申请号：US09450791

申请日：1999-11-29

申请人： Kadthala R. Narendrnath ,  Syed H. Askari ,  Dennis S. Grimard ,  Surinder S. Bedi ,  Ananda H. Kumar ,  Shamouil Shamouilian

发明人： Kadthala R. Narendrnath ,  Syed H. Askari ,  Dennis S. Grimard ,  Surinder S. Bedi ,  Ananda H. Kumar ,  Shamouil Shamouilian

IPC分类号： H02N1300

CPC分类号： H01L21/67098 ,  H01L21/6831 ,  H02N13/00

摘要： A chamber 30 for processing a substrate 25 comprises a support 55 comprising a dielectric 60 enveloping an electrode 70. The electrode 70 may be chargeable to electrostatically hold the substrate 25 or may be chargeable to form an energized gas in the chamber 30 to process the substrate 25. A base 130 is below the support 55, and a compliant member 300 is positioned between the support 55 and the base 130. The compliant member 300 may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric 60 and the base 130.

摘要翻译： 用于处理衬底25的室30包括支撑件55，其包括包围电极70的电介质60.电极70可以带电以静电保持衬底25，或者可以对腔室30中的带电气体进行充电以处理衬底 基座130在支撑件55下方，并且顺应构件300定位在支撑件55和基座130之间。顺应构件300可以适于减轻由电介质60和电介质60之间的热膨胀失配引起的热应力 基地130。

公开(公告)号：US06310755B1

公开(公告)日：2001-10-30

申请号：US09307215

申请日：1999-05-07

申请人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

发明人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： C04B35/565 ,  C04B35/185 ,  C04B35/806 ,  C04B37/006 ,  C04B37/026 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2235/402 ,  C04B2235/5248 ,  C04B2235/616 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/121 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/405 ,  C04B2237/60 ,  C22C29/00 ,  C22C2204/00 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  C04B38/00 ,  C04B41/4523

摘要： An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.

摘要翻译： 静电吸盘55具有静电构件100，静电构件100包括具有适于接纳衬底30的表面120的电介质115.电介质115覆盖电极105，电极105可充电以静电保持衬底30.静电构件100下方的支撑件190具有 空腔300适于保持气体以用作热绝缘体，以调节从静电卡盘55到腔室25的表面120的热量流动。空腔300具有截面轮廓，其形状设置成提供预定的 跨越衬底30的温度分布。

公开(公告)号：US06462928B1

公开(公告)日：2002-10-08

申请号：US09306944

申请日：1999-05-07

申请人： Shamouil Shamouilian ,  You Wang ,  Surinder S. Bedi ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

发明人： Shamouil Shamouilian ,  You Wang ,  Surinder S. Bedi ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC分类号： H02N1300

CPC分类号： H02N13/00 ,  H01L21/6833

摘要： An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.

摘要翻译： 静电卡盘55包括电连接器140，电连接器140连接到电极105以将电荷引导到电极105.电连接器140包括具有至少约1500℃的熔化温度的难熔金属，例如用于 例如钨，钛，镍，钽，钼或其合金。 优选地，电连接器140通过软化温度小于约600℃的金属（例如铝，铟或低熔点合金）结合到电极105。

公开(公告)号：US06538872B1

公开(公告)日：2003-03-25

申请号：US09307214

申请日：2001-11-05

申请人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

发明人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： H01L21/6833 ,  H01L21/67103

摘要： An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

摘要翻译： 用于保持基板30的静电卡盘55包括由覆盖电极105的电介质115制成的静电构件100，电极105可充电以静电保持基板30.包括加热器235的基座175与静电构件100接合。 基底可以由复合材料制成，例如渗透有金属的多孔陶瓷，并且可以通过接合层与静电部件接合。

公开(公告)号：US06490146B2

公开(公告)日：2002-12-03

申请号：US09929806

申请日：2001-08-13

申请人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

发明人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： C04B37/026 ,  C04B37/006 ,  C04B37/021 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/36 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/401 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/61 ,  C04B2237/62 ,  C04B2237/64 ,  C04B2237/74 ,  H01L21/6831 ,  H01L21/6833

摘要： An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

公开(公告)号：US06721162B2

公开(公告)日：2004-04-13

申请号：US10095914

申请日：2002-03-12

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02N1300

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

摘要翻译： 静电吸盘具有能够带电的电极，以静电保持基板。 复合层覆盖电极。 复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成 材料。 卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

公开(公告)号：US6108189A

公开(公告)日：2000-08-22

申请号：US965690

申请日：1997-11-06

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/2001 ,  Y10T279/23

摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

摘要翻译： 用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。 包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。 优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。 还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。

公开(公告)号：US06414834B1

公开(公告)日：2002-07-02

申请号：US09596108

申请日：2000-06-16

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02N1300

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.

摘要翻译： 用于将衬底55保持在高密度等离子体中的静电卡盘100包括至少部分被半导体电介质115覆盖的电极110，其中半导体电介质115可具有约5×10 9欧姆到约8×10 10欧姆·厘米的电阻。

公开(公告)号：US06581275B2

公开(公告)日：2003-06-24

申请号：US09767648

申请日：2001-01-22

申请人： Kadthala R. Narendrnath ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Kadthala R. Narendrnath ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H01R4300

CPC分类号： H01L21/6831 ,  Y10T29/49117 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49147 ,  Y10T29/49169

摘要： A method of fabricating an electrostatic chuck capable of holding a substrate in a chamber comprises forming an at least partially sintered dielectric insert, forming a dielectric preform comprising an electrode and a gas conduit, and placing the dielectric insert in the gas conduit of the dielectric preform, and sintering the dielectric preform and the dielectric insert.

公开(公告)号：US6095084A

公开(公告)日：2000-08-01

申请号：US893599

申请日：1997-07-14

申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

IPC分类号： C23C16/00

CPC分类号： C23C16/00

摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.

摘要翻译： 用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。 电感天线135用于从等离子体区域中的处理气体形成感应等离子体。 腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压 在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180​​将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度 ，在室55的等离子体区65中的高度方向性的等离子体。