公开(公告)号：US06551404B2

公开(公告)日：2003-04-22

申请号：US09747275

申请日：2000-12-22

申请人： Gert-Jan Snijders ,  Vladimir Ivanovich Kuznetsov ,  Christianus Gerardus M. de Ridder ,  Herbert Terhorst

发明人： Gert-Jan Snijders ,  Vladimir Ivanovich Kuznetsov ,  Christianus Gerardus M. de Ridder ,  Herbert Terhorst

IPC分类号： H01L2120

CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/6838

摘要： An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away front and towards each other, the two housing parts bounding a treatment chamber, while around the treatment chamber there is provided a first groove connected to gas discharge means, while in at least one of the two boundary surfaces there is provided a second groove connected to gas feed means, the first groove being located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and the second boundary surface.

摘要翻译： 一种用于处理由半导体材料制成的晶片的设备，所述设备包括布置成彼此远离并朝向彼此移动的第一和第二壳体部分，所述两个壳体部分包围处理室，而在处理室周围设置有第一 沟槽连接到气体排出装置，而在两个边界表面中的至少一个中设置有连接到气体供给装置的第二凹槽，第一凹槽径向位于第二凹槽内，并且在使用中由 气体供给装置使得从第二凹槽，气体在第一和第二边界表面之间的间隙中径向向内和径向向外的方向流动。

公开(公告)号：US06561798B2

公开(公告)日：2003-05-13

申请号：US09875277

申请日：2001-06-06

申请人： Vladimir Ivanovich Kuznetsov ,  Bartholomeus Hans L. Lindeboom ,  Ronald Bast ,  Christianus Gerardus M. de Ridder

发明人： Vladimir Ivanovich Kuznetsov ,  Bartholomeus Hans L. Lindeboom ,  Ronald Bast ,  Christianus Gerardus M. de Ridder

IPC分类号： H01L2168

CPC分类号： H01L21/67103 ,  H01L21/681 ,  Y10S414/136

摘要： An apparatus for thermally processing a wafer at an elevated temperature, in which a processing position is bounded at least on one side by a housing part which, in use, is at an elevated temperature, the apparatus being provided with measuring means for determining the position of a wafer in the processing position before and/or during processing, the measuring means being provided with at least one signal processor and at least one signal conductor, the or each signal processor being located at a distance from the processing position in an area of lower temperature, the signal conductor extending through the housing part being at an elevated temperature and extending from a measuring point in or near the processing position to the signal processor for transmitting to the signal processor contactlessly obtained measuring signals, the at least one signal conductor, at least the part extending through the housing part being at an elevated temperature, being heat resistant.

公开(公告)号：US06560896B2

公开(公告)日：2003-05-13

申请号：US09752655

申请日：2000-12-28

申请人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Gert Jan Snijders

发明人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Gert Jan Snijders

IPC分类号： F26B2506

CPC分类号： H01L21/68764 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68771 ,  Y10S414/135 ,  Y10S414/141

摘要： Apparatus, method and system for the treatment of a wafer. After a treatment at elevated temperature, a wafer is taken out of the reactor in question with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side and consists of a wafer surrounding ring. The wafer is then placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.

摘要翻译： 用于处理晶片的装置，方法和系统。 在升高的温度下处理之后，借助于机械传送装置的帮助，将晶片从所述反应器中取出，该机械传送装置优选地围绕圆周和下侧夹持晶片，并且由晶片周围的环组成。 然后将晶片放置在浮置晶片反应器中，在其中以受控的方式冷却晶片。 然后进行进一步行动或治疗的运输。

公开(公告)号：US06877250B2

公开(公告)日：2005-04-12

申请号：US10316218

申请日：2002-12-10

申请人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Gert Jan Snijders

发明人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Gert Jan Snijders

IPC分类号： H01L21/00 ,  H01L21/687 ,  F26B7/00 ,  B65B49/07

CPC分类号： H01L21/68764 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68771 ,  Y10S414/135 ,  Y10S414/141

摘要： In an apparatus for a treatment of a wafer at elevated temperatures, the wafer is taken out of the reactor after heat treatment with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side. The transport apparatus includes a wafer surrounding ring. The wafer is placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.

摘要翻译： 在用于在升高的温度下处理晶片的装置中，借助于优选地将晶片围绕圆周和下侧夹持的机械输送装置，将晶片热处理后从反应器中取出。 输送装置包括晶圆周围环。 将晶片放置在浮置晶片反应器中，在其中以受控的方式冷却晶片。 然后进行进一步行动或治疗的运输。

公开(公告)号：US06770851B2

公开(公告)日：2004-08-03

申请号：US10186269

申请日：2002-06-27

申请人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

发明人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

IPC分类号： F27B514

CPC分类号： H01L21/67109 ,  H01L21/6838

摘要： In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.

摘要翻译： 在用于诸如晶片的半导体衬底的热处理的方法和装置中，晶片被带入热处理设备，其中热处理设备包括平行于晶片的引入位置的两个基本上平的部分，晶片 第一部分被加热到第一高温，第二部分借助于冷却装置被冷却，并且处于低于70℃的第二温度。通过控制晶片和至少一个 的部分，晶片的温度可以受到这样的程度的影响，即在一定时间内，晶片的温度相对更接近第一高温，然后承受比较接近于 第二低温。

公开(公告)号：US20140199788A1

公开(公告)日：2014-07-17

申请号：US14232901

申请日：2012-07-13

申请人： Pascal Gustaaf Vermont ,  Wilhelmus Gerardus Van Velzen ,  Vladimir Ivanovich Kuznetsov ,  Ernst Hendrik August Granneman ,  Gonzalo Felipe Ramirez Troxler

发明人： Pascal Gustaaf Vermont ,  Wilhelmus Gerardus Van Velzen ,  Vladimir Ivanovich Kuznetsov ,  Ernst Hendrik August Granneman ,  Gonzalo Felipe Ramirez Troxler

IPC分类号： H01L21/67 ,  C23C16/52 ,  H01L21/66

CPC分类号： H01L21/67276 ,  C23C16/403 ,  C23C16/45551 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67259 ,  H01L21/6776 ,  H01L21/67784 ,  H01L22/26

摘要： Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1, . . . , S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1, . . . , S6), and that is configured to record said reference signal as a function of time and to process said reference signal.

摘要翻译： 公开了一种工艺通道（102），衬底（140）可以在浮动状态下在两个气体轴承（124,134）之间传送。 为了监测基板通过处理隧道的输送，隧道的上壁和下壁（120,130）在相应的基板检测传感器位置装配有至少一个基板检测传感器（S1，...，S6） 所述衬底检测传感器被配置为产生反映在所述衬底检测传感器位置附近和/或所述第一和第二壁之间的衬底的存在的参考信号。 还提供了可操作地连接到至少一个基板检测传感器（S1，...，S6）的监视和控制单元（160），并且被配置为记录作为时间的函数的所述参考信号并且处理 所述参考信号。

公开(公告)号：US06719499B1

公开(公告)日：2004-04-13

申请号：US09889434

申请日：2001-10-09

申请人： Vladimir Ivanovich Kuznetsov ,  Sijbrand Radelaar ,  Jacobus Cornelis Gerardus Van Der Sanden ,  Theo Anjes Maria Ruijl

发明人： Vladimir Ivanovich Kuznetsov ,  Sijbrand Radelaar ,  Jacobus Cornelis Gerardus Van Der Sanden ,  Theo Anjes Maria Ruijl

IPC分类号： B65G5338

CPC分类号： H01L21/6838 ,  Y10S414/139

摘要： Device for the floating accommodation of a wafer. This device comprises two mutually opposite parts which delimit a chamber in which the wafer is placed. By gas being supplied from opposite sides, the wafer is held in a floating position. To prevent the wafer from touching the lateral boundaries, it is proposed to provide a discharge of gas at least partially near the circumference of the chamber wherein the wafer is accommodated. This discharge is realised such that if the wafer moves from the intended position to such a gas discharge, by closing of said gas discharge, the pressure is locally increased such that a force is generated acting in opposite direction to return the wafer in the intended position.

摘要翻译： 用于晶片浮动调节的装置。 该装置包括两个彼此相对的部分，其限定了放置晶片的腔室。 通过从相对侧供应的气体，晶片保持在浮动位置。 为了防止晶片接触横向边界，建议至少部分地在容纳晶片的室的圆周附近提供气体的排放。 实现这种放电，使得如果晶片从预期位置移动到这种气体放电，则通过关闭所述气体放电，局部地增加压力，使得产生作用在相反方向上的力以将晶片返回到预期位置 。

公开(公告)号：US06964751B2

公开(公告)日：2005-11-15

申请号：US10823304

申请日：2004-04-13

申请人： Arjen Storm ,  Ronald Bast ,  Vladimir Ivanovich Kuznetsov ,  Jan Zinger

发明人： Arjen Storm ,  Ronald Bast ,  Vladimir Ivanovich Kuznetsov ,  Jan Zinger

IPC分类号： H01L21/324 ,  H01L21/00 ,  C21D11/00

CPC分类号： H01L21/00 ,  H01L21/67109

摘要： Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.

摘要翻译： 用于基板热处理的方法和装置，其中基板位于在衬底的表面上延伸的加热的基本平坦的炉体附近。 为了在连续处理多个基板时提供可再现的处理，炉体的温度被测量为与基板相邻的表面接近，可以检测到通过基板取出炉体的热量。 每个基底的引入在一定时间点进行，在这样一个时间点，以这种方式测量的温度在一定限度内等于所需的初始处理温度T Trig。

公开(公告)号：US06824619B1

公开(公告)日：2004-11-30

申请号：US09936257

申请日：2002-01-11

申请人： Vladimir Ivanovich Kuznetsov ,  Sijbrand Radelaar ,  Jacobus Cornells Gerardus Van Der Sanden ,  Theo Anjes Maria Ruijl

发明人： Vladimir Ivanovich Kuznetsov ,  Sijbrand Radelaar ,  Jacobus Cornells Gerardus Van Der Sanden ,  Theo Anjes Maria Ruijl

IPC分类号： H01L2100

CPC分类号： H01L21/67784

摘要： Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

摘要翻译： 用于旋转布置在反应器中的晶片的方法和装置。 将晶片在这种性质的反应器中处理，并且对于该处理应尽可能均匀地进行是重要的。 为此目的，提出通过使气流垂直于晶片的表面出现，然后赋予该气体相对于晶片切向的部件，从而产生旋转来旋转晶片。 这种切向部件可以通过提供可以是螺旋形或圆形设计的凹槽产生。

公开(公告)号：US06329304B1

公开(公告)日：2001-12-11

申请号：US09552987

申请日：2000-04-21

申请人： Vladimir Ivanovich Kuznetsov ,  Ernst Hendrik August Granneman

发明人： Vladimir Ivanovich Kuznetsov ,  Ernst Hendrik August Granneman

IPC分类号： H01L2100

CPC分类号： H01L21/67248 ,  H01L21/67784

摘要： Floating wafer provided with heating elements which, by means of a controller, keep the walls of the floating wafer reactor at the desired temperature. By means of the sensors arranged in the walls, this temperate is kept substantially constant. To compensate for the temperature drop occurring during the entering of a wafer, which is caused by the absorption of warmth by the comparatively cold wafer, and to limit temperature variation in the processing area as much as possible, it is proposed to immediately supply an amount of energy to the heating elements, independently of the reaction of the sensors, during entering of the wafer.

摘要翻译： 具有加热元件的浮动晶片，其通过控制器将浮动晶片反应器的壁保持在期望的温度。 通过布置在壁中的传感器，这种温度保持基本恒定。 为了补偿由相对冷的晶片吸收的温度引起的晶片进入期间发生的温度下降，并且尽可能地限制处理区域的温度变化，建议立即提供量 独立于传感器的反应，在晶片进入期间，能量到加热元件。