Composition for Coating over a Photoresist Pattern
    1.
    发明申请
    Composition for Coating over a Photoresist Pattern 有权
    用于在光刻胶图案上涂覆的组合物

    公开(公告)号:US20090317739A1

    公开(公告)日:2009-12-24

    申请号:US12141307

    申请日:2008-06-18

    摘要: The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.

    摘要翻译: 本发明涉及用于涂覆光致抗蚀剂图案的水性涂料组合物,其包含含有至少一个具有烷基氨基的单元的聚合物,其中该单元具有结构(1),其中R 1至R 5独立地选自氢和C 1 至C6烷基,W为C1至C6烷基。 本发明还涉及使用本发明组合物对光致抗蚀剂层进行成像的方法。

    Composition for coating over a photoresist pattern
    2.
    发明授权
    Composition for coating over a photoresist pattern 有权
    用于在光致抗蚀剂图案上涂覆的组合物

    公开(公告)号:US07745077B2

    公开(公告)日:2010-06-29

    申请号:US12141307

    申请日:2008-06-18

    IPC分类号: G03F7/30

    摘要: The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.

    摘要翻译: 本发明涉及用于涂覆光致抗蚀剂图案的水性涂料组合物,其包含含有至少一个具有烷基氨基的单元的聚合物,其中该单元具有结构(1),其中R 1至R 5独立地选自氢和C 1 至C6烷基,W为C1至C6烷基。 本发明还涉及使用本发明组合物对光致抗蚀剂层进行成像的方法。

    Composition for Coating over a Photoresist Pattern Comprising a Lactam
    3.
    发明申请
    Composition for Coating over a Photoresist Pattern Comprising a Lactam 审中-公开
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号:US20120219919A1

    公开(公告)日:2012-08-30

    申请号:US13033912

    申请日:2011-02-24

    IPC分类号: G03F7/26

    CPC分类号: G03F7/405

    摘要: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译: 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物,其包含含有结构(1)的内酰胺基团的聚合物,其中R 1独立地选自氢,C 1 -C 4烷基,C 1 -C 6烷基醇,羟基(OH) (NH 2),羧酸和酰胺(CONH 2)表示与聚合物的连接,m = 1-6,n = 1-4。 本发明还涉及一种用于制造微电子器件的方法,包括提供具有光致抗蚀剂图案的基底,用新颖的涂层材料涂覆光致抗蚀剂图案,使一部分涂料与光致抗蚀剂图案接触,并且将一部分 不与去除溶液反应的涂料。

    Composition for coating over a photoresist pattern comprising a lactam
    4.
    发明授权
    Composition for coating over a photoresist pattern comprising a lactam 有权
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号:US07923200B2

    公开(公告)日:2011-04-12

    申请号:US11697804

    申请日:2007-04-09

    IPC分类号: G03F7/40

    CPC分类号: G03F7/40 C09D139/00

    摘要: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2),  represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译: 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物,其包含含有结构(1)的内酰胺基团的聚合物,其中R 1独立地选自氢,C 1 -C 4烷基,C 1 -C 6烷基醇,羟基(OH) (NH 2),羧酸和酰胺(CONH 2)表示与聚合物的连接,m = 1-6,n = 1-4。 本发明还涉及一种用于制造微电子器件的方法,包括提供具有光致抗蚀剂图案的基底,用新颖的涂层材料涂覆光致抗蚀剂图案,使一部分涂料与光致抗蚀剂图案接触,并且将一部分 不与去除溶液反应的涂料。

    Composition for Coating over a Photoresist Pattern Comprising a Lactam
    5.
    发明申请
    Composition for Coating over a Photoresist Pattern Comprising a Lactam 有权
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号:US20080248427A1

    公开(公告)日:2008-10-09

    申请号:US11697804

    申请日:2007-04-09

    IPC分类号: G03C1/00

    CPC分类号: G03F7/40 C09D139/00

    摘要: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译: 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物,其包含含有结构(1)的内酰胺基团的聚合物,其中R 1独立地选自氢,C 1〜 C 1 -C 4烷基,C 1 -C 6烷基醇,羟基(OH),胺(NH 2) ),羧酸和酰胺(CONH 2 2),表示与聚合物的连接,m = 1-6,n = 1-4。 本发明还涉及一种用于制造微电子器件的方法,包括提供具有光致抗蚀剂图案的基底,用新颖的涂层材料涂覆光致抗蚀剂图案,使一部分涂料与光致抗蚀剂图案接触,并且将一部分 不与去除溶液反应的涂料。

    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
    9.
    发明授权
    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
    用于深紫外光刻的光致抗蚀剂组合物,其包含光活性化合物的混合物

    公开(公告)号:US06991888B2

    公开(公告)日:2006-01-31

    申请号:US10439472

    申请日:2003-05-16

    摘要: The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.

    摘要翻译: 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物,能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a)含有酸不稳定基团的聚合物,和b)光活性化合物的新混合物,其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ,其中R 1和R 2 R 5,R 6,R 7,或N R 8,R 9和R 9在本文中定义; m = 1-5; X - 是阴离子,Ar选自萘基,蒽基和结构3,其中R 30,R 31,R SUB > 32,R 33和R 34在本文中定义。