Process for the cross-linking of high density polyethylene with diene
units in solid state
    1.
    发明授权
    Process for the cross-linking of high density polyethylene with diene units in solid state 失效
    高密度聚乙烯与固体二烯单元交联的方法

    公开(公告)号:US4284743A

    公开(公告)日:1981-08-18

    申请号:US104389

    申请日:1979-12-17

    CPC分类号: C08J3/24 C08J2323/08

    摘要: A process for the cross-linking of high density polyethylene in the solid state according to which the polyethylene is admixed with the agents normally used for the vulcanization of unsaturated rubber compounds, then processed into the desired article and thereafter cross-linked at a temperature lower than the melting point of the polyethylene, the process being carried out in polyethylene containing a certain number of unsaturated bonds along the polymer chain.

    摘要翻译: 用于将固态的高密度聚乙烯交联的方法,根据该方法将聚乙烯与通常用于硫化不饱和橡胶化合物的试剂混合,然后加工成所需制品,然后在较低温度下交联 超过聚乙烯的熔点,该方法在聚合物链中含有一定数量的不饱和键的聚乙烯中进行。

    All-optical wavelength coded logic gates
    2.
    发明授权
    All-optical wavelength coded logic gates 失效
    全光波长编码逻辑门

    公开(公告)号:US6151428A

    公开(公告)日:2000-11-21

    申请号:US965851

    申请日:1997-11-07

    摘要: All-optical logic gates in which binary words are encoded using wavelength. A method and apparatus for processing information in this wavelength encoded format is provided. The processing may occur entirely in the optical domain. This approach is modular and enables construction of logic gates using custom wave guide chips that can be mass-produced in a manner similar to that of conventional electronic digital chips. Specific gates, such as AND, OR, EXOR, or NAND, may be "programmed" into a given chip during its fabrication to encode the desired truth table. The output states of the chip are determined by ultrafast mixing of binary encoded wavelengths in a semiconductor optical amplifier. The result is a new wavelength having a relationship to the input wavelengths determined entirely by the desired truth table. The possible clock-rates for these gates can be exceedingly high, such as several hundred Gigabits/second. The product of integer word length "N" and gate clock speed can exceed several Terabits/second and may be as high as the overall optical bandwidth of the system. Complicated multi-input functions may be constructed using this approach and dynamically programmable functions may be built in which either electrical or optical signals reconfigure a set of gates by reprogramming the inverter operations in the chips.

    摘要翻译: 使用波长对二进制字进行编码的全光逻辑门。 提供了一种用于处理该波长编码格式的信息的方法和装置。 该处理可以完全在光学域中发生。 这种方法是模块化的,并且可以使用可以以类似于常规电子数字芯片的方式批量生产的定制波导芯片来构建逻辑门。 诸如AND,OR,EXOR或NAND的特定门可以在其制造期间被编程到给定芯片中以对期望的真值表进行编码。 芯片的输出状态通过半导体光放大器中的二进制编码波长的超快混合来确定。 结果是与完全由所需真值表确定的输入波长具有关系的新波长。 这些门的可能的时钟速率可能非常高,例如几百吉比特/秒。 整数字长度“N”和门时钟速度的乘积可以超过几兆比特/秒,并且可能与系统的整体光学带宽一样高。 可以使用该方法构造复杂的多输入功能,并且可以内置动态可编程功能,其中电或光信号通过重新编程芯片中的逆变器操作来重新配置一组门。

    Enhancement of Light Emission Efficiency by Tunable Surface Plasmons
    3.
    发明申请
    Enhancement of Light Emission Efficiency by Tunable Surface Plasmons 审中-公开
    通过可调谐表面增强光发射效率

    公开(公告)号:US20090261317A1

    公开(公告)日:2009-10-22

    申请号:US11991568

    申请日:2006-09-06

    申请人: Roberto Paiella

    发明人: Roberto Paiella

    IPC分类号: H01L33/00 H01L21/28

    摘要: An apparatus (275) and method of making a light emitting apparatus The light emitting apparatus (275) has a light emitting diode layer (285) and a stack of metal layers and dielectric layers (296) The metal layers may alternate with the dielectric layers The thickness of one or more metal layers determines a crossing pomt of one or more surface plasmon (SP) modes of one or more metal layers The thicknesses of the metal layer and dielectric layer control the size of an anticrossing of one or more SP modes of one or more metal layers.

    摘要翻译: 一种设备(275)和制造发光装置的方法发光设备(275)具有发光二极管层(285)和金属层和电介质层(296)的叠层。金属层可以与电介质层交替 一个或多个金属层的厚度确定一个或多个金属层的一个或多个表面等离子体(SP)模式的交叉点。金属层和电介质层的厚度控制一个或多个SP模式的抗微生物的尺寸 一个或多个金属层。