公开(公告)号：US5384219A

公开(公告)日：1995-01-24

申请号：US114953

申请日：1993-08-31

申请人： Giang T. Dao ,  Qi De Qian ,  Nelson N. Tam ,  Eng T. Gaw ,  Harry H. Fujimoto

发明人： Giang T. Dao ,  Qi De Qian ,  Nelson N. Tam ,  Eng T. Gaw ,  Harry H. Fujimoto

IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70625 ,  G03F7/70641

摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and method of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase. Also, since each pattern is structurally identical, any focal shift due to phase error is in the same direction for all patterns, so that an acceptable depth of field is maintained for a substrate exposed with the reticle.

摘要翻译： 具有彼此相邻的图案的相移掩模版具有用于特征和相移元件的反相，以及制造掩模版的方法。 每个图案和反相图案在相移方向上在结构上是相同的，因此对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向。 在优选实施例中，结构相同的相反的掩模版用于形成紧密间隔的接触或通孔的阵列。 对于标线板上的第一个图案，该特征将为0°相位，该特征周围的相移边缘将为180°相位。 围绕第一图案的所有图案都具有0°相位的相移边界和180°相位的特征。 以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。 另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是180°异相的。 此外，由于每个图案在结构上相同，所以对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向，因此对于用掩模版曝光的基底，可以保持可接受的景深。

公开(公告)号：US5348826A

公开(公告)日：1994-09-20

申请号：US12564

申请日：1993-02-02

申请人： Giang T. Dao ,  Qi De Qian ,  Nelson N. Tam ,  Eng T. Gaw ,  Harry H. Fujimoto

发明人： Giang T. Dao ,  Qi De Qian ,  Nelson N. Tam ,  Eng T. Gaw ,  Harry H. Fujimoto

IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70625 ,  G03F7/70641

摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase. Also, since each pattern is structurally identical, any focal shift due to phase error is in the same direction for all patterns, so that an acceptable depth of field is maintained for a substrate exposed with the reticle.

摘要翻译： 具有彼此相邻的图案的相移掩模版具有用于特征和相移元件的反相，以及制造掩模版的方法。 每个图案和反相图案在相移方向上在结构上是相同的，因此对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向。 在优选实施例中，结构相同的相反的掩模版用于形成紧密间隔的接触或通孔的阵列。 对于标线板上的第一个图案，该特征将为0°相位，该特征周围的相移边缘将为180°相位。 围绕第一图案的所有图案都具有0°相位的相移边界和180°相位的特征。 以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。 另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是180°异相的。 此外，由于每个图案在结构上相同，所以对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向，因此对于用掩模版曝光的基底，可以保持可接受的景深。

公开(公告)号：US5300379A

公开(公告)日：1994-04-05

申请号：US933341

申请日：1992-08-21

申请人： Giang T. Dao ,  Eng T. Gaw ,  Nelson N. Tam ,  Ruben A. Rodriquez

发明人： Giang T. Dao ,  Eng T. Gaw ,  Nelson N. Tam ,  Ruben A. Rodriquez

IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70625 ,  G03F7/70641

摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle, are disclosed. In a preferred embodiment, the inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase.

摘要翻译： 公开了一种具有彼此邻近的图案的相移掩模版，具有用于特征和相移元件的反相，以及制造掩模版的方法。 在优选实施例中，反相的掩模版用于形成紧密间隔的接触或通孔的阵列。 对于刻线上的第一个图案，该特征将为0度相位，并且该特征周围的相移边缘将为180度相位。 围绕第一图案的所有图案都具有0度相位和180度相位特征的移相轮缘。 以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。 另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是相位相差180度。

公开(公告)号：US5633102A

公开(公告)日：1997-05-27

申请号：US396926

申请日：1995-03-01

申请人： Kenny K. H. Toh ,  Giang T. Dao ,  Eng T. Gaw ,  Rajeev R. Singh

发明人： Kenny K. H. Toh ,  Giang T. Dao ,  Eng T. Gaw ,  Rajeev R. Singh

IPC分类号： G03F1/34 ,  G03F9/00

CPC分类号： G03F1/34

摘要： Methods of forming a patterned layer using a reticle having a phase-shifting element and the reticles for making the patterns are disclosed. The methods of the present invention use a phase-shifting element to change the phase of the radiation exiting a reticle about 180.degree. out of phase compared to the radiation exiting the areas immediately adjacent to an edge of the phase-shifting element so that radiation from both areas near the edge destructively interfere with each other so as to cancel out one another thereby resulting in a substantially unexposed region on a semiconductor substrate. The present invention can be used to prevent exposing a large area by using a set of phase-shifting elements to form a grating or checkerboard area.

摘要翻译： 公开了使用具有相移元件的掩模版和用于制作图案的掩模版形成图案层的方法。 与离开与相移元件的边缘紧邻的区域的辐射相比，本发明的方法使用相移元件来改变离开标线的辐射的相位大约180°异相，使得来自 靠近边缘的两个区域相互干涉地彼此抵消，从而在半导体衬底上形成基本上未曝光的区域。 本发明可以用于通过使用一组移相元件来防止暴露大面积以形成光栅或棋盘区域。

公开(公告)号：US5354632A

公开(公告)日：1994-10-11

申请号：US869026

申请日：1992-04-15

申请人： Giang T. Dao ,  Kenny K. H. Toh ,  Eng T. Gaw ,  Rajeev R. Singh

发明人： Giang T. Dao ,  Kenny K. H. Toh ,  Eng T. Gaw ,  Rajeev R. Singh

IPC分类号： G03F1/00 ,  G03F1/29 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00 ,  G03F9/02

CPC分类号： G03F7/70283 ,  G03F1/29

摘要： A reticle and method of forming a patterned resist layer on a semiconductor substrate using the reticle is described. The substrate is coated with a resist layer. The resist layer is selectively exposed to a radiation wave having a wavelength that is transmitted through the reticle. The reticle includes at least one first, second, and third areas. The first area has a first transmittance. The second area is adjacent to the first area and has a second transmittance that is less than the first transmittance. The second area shifts radiation transmitted through the second area approximately 180.degree. out of phase relative to radiation transmitted through the first area. The third area is adjacent to the second area. The third area is substantially opaque to prevent virtually any transmission of radiation. The resist layer is developed to form the patterned resist layer including at least one resist layer opening and at least one resist element.

摘要翻译： 描述了使用该掩模版在半导体衬底上形成图案化的抗蚀剂层的掩模版和方法。 衬底被涂覆有抗蚀剂层。 抗蚀剂层选择性地暴露于具有透射通过掩模版的波长的辐射波。 掩模版包括至少一个第一，第二和第三区域。 第一区域具有第一透射率。 第二区域与第一区域相邻，并且具有小于第一透射率的第二透射率。 第二区域相对于通过第一区域传输的辐射，使透射通过第二区域的辐射相差大约180度。 第三个区域与第二个区域相邻。 第三区域基本上是不透明的，以防止几乎任何辐射的传播。 显影抗蚀剂层以形成包括至少一个抗蚀剂层开口和至少一个抗蚀剂元件的图案化抗蚀剂层。

公开(公告)号：US5700602A

公开(公告)日：1997-12-23

申请号：US538354

申请日：1995-10-30

申请人： Giang T. Dao ,  Nelson N. Tam ,  Gang Liu ,  Jeffrey N. Farnsworth

发明人： Giang T. Dao ,  Nelson N. Tam ,  Gang Liu ,  Jeffrey N. Farnsworth

IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70625 ,  G03F7/70641

摘要： A metrology pattern on a reticle comprising a phase-shifted feature and an additional phase-shifted feature and/or non phase-shifted feature is disclosed. The metrology pattern can be used to determine the target thickness for achieving 180.degree. phase difference, i.e., zero phase error on a phase-shifted reticle. A test reticle having several such metrology patterns, with several different phase-shifter thickness differences is used to produce a CD versus defocus data for each of the phase-shifter thickness differences by performing an exposure matrix or series of aerial images. The data can be used to determine a target thickness for zero phase error. The data can also be used to determine a correlation between focal shift, phase error, and shifter thickness. The metrology pattern can be placed on reticles used for the fabrication of semiconductor devices, for example, so that an exposure matrix can be performed, to determine any focal shift, which can then be related to phase error.

摘要翻译： 公开了包括相移特征和附加相移特征和/或非相移特征的掩模版上的度量图案。 可以使用计量模式来确定实现180°相位差的目标厚度，即在相移掩模版上的零相位误差。 具有几种这样的测量图案的测试掩模版具有几种不同的移相器厚度差异，用于通过执行曝光矩阵或一系列的空间图像来产生每个移相器厚度差的CD对散焦数据。 该数据可用于确定零相位误差的目标厚度。 该数据还可用于确定焦点偏移，相位误差和移位器厚度之间的相关性。 例如，可以将计量图案放置在用于制造半导体器件的掩模版上，使得可以执行曝光矩阵，以确定任何可能与相位误差相关的焦点偏移。

公开(公告)号：US5302477A

公开(公告)日：1994-04-12

申请号：US933400

申请日：1992-08-21

申请人： Giang T. Dao ,  Ruben A. Rodriguez ,  Harry H. Fujimoto

发明人： Giang T. Dao ,  Ruben A. Rodriguez ,  Harry H. Fujimoto

IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70625 ,  G03F7/70641

摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle, are disclosed. In a preferred embodiment, the inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase.

摘要翻译： 公开了一种具有彼此邻近的图案的相移掩模版，具有用于特征和相移元件的反相，以及制造掩模版的方法。 在优选实施例中，反相的掩模版用于形成紧密间隔的接触或通孔的阵列。 对于刻线上的第一个图案，该特征将为0度相位，并且该特征周围的相移边缘将为180度相位。 围绕第一图案的所有图案都具有0度相位和180度相位特征的移相轮缘。 以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。 另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是相位相差180度。

公开(公告)号：US06763608B2

公开(公告)日：2004-07-20

申请号：US10256357

申请日：2002-09-26

申请人： Giang T. Dao ,  Ronald J. Kuse

发明人： Giang T. Dao ,  Ronald J. Kuse

IPC分类号： F26B700

CPC分类号： H01L21/67359 ,  G03F1/62 ,  G03F1/66 ,  G03F7/70741 ,  G03F7/70916 ,  G03F7/70925 ,  G03F7/70983 ,  H01L21/67366 ,  H01L21/67393

摘要： A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.

摘要翻译： 公开了传送掩模版的方法。 将掩模版放置在具有电离器的掩模版载体中。 此外，掩模版可以附着防护薄膜组件。 防护薄膜组件由防护薄膜组件框架和在防护薄膜框架上延伸的防护薄膜组成。 防护薄膜框架包括在吸收材料内。

公开(公告)号：US5789118A

公开(公告)日：1998-08-04

申请号：US764667

申请日：1996-12-11

申请人： Gang Liu ,  Giang T. Dao ,  Alan M. Snyder

发明人： Gang Liu ,  Giang T. Dao ,  Alan M. Snyder

IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70625 ,  G03F7/70641

摘要： An attenuating phase metrology cell on a reticle comprising an attenuating feature and a binary feature. The metrology cell is used to determine amount of focal shift associated with the attenuating phase-shifting material. A dimension of an image of the attenuating feature is measured at a number of focal distances from the reticle. Thereafter a first relationship between the measurements of the attenuating feature and the focal distance is determined. A dimension of an aerial image of the binary feature is also measured at a number of focal distances from the reticle. The relationship between the measurements of the binary feature and focal distance is determined. An amount of focal shift is then determined based upon the first and second relationships. The attenuating metrology pattern can thus be included on an attenuating phase-shifting reticle, such that the focal shift of the attenuating phase-shifting reticle can be determined.

摘要翻译： 包括衰减特征和二进制特征的掩模版上的衰减相位测量单元。 测量单元用于确定与衰减相移材料相关的焦点位移量。 衰减特征的图像的尺寸在距离掩模版的多个焦距处被测量。 此后确定衰减特征的测量与焦距之间的第一关系。 在距掩模版的多个焦距处也测量二进制特征的空间图像的尺寸。 确定二进制特征和焦距的测量之间的关系。 然后基于第一和第二关系确定焦点偏移量。 因此衰减计量模式可以被包括在衰减的相移掩模版上，使得可以确定衰减相移掩模版的焦点偏移。

公开(公告)号：US5635316A

公开(公告)日：1997-06-03

申请号：US542741

申请日：1995-10-13

申请人： Giang T. Dao

发明人： Giang T. Dao

IPC分类号： G03F1/34 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/34 ,  G03F7/2022 ,  G03F7/70283 ,  G03F7/70433 ,  G03F7/70466

摘要： A device layer layout methodology, and method and apparatus for patterning a photosensitive layer. Device features are placed on lines running in rows and/or columns during layout. The lines and/or columns are extracted from the database to produce a layout of the phase-edge phase shifting layer. The photosensitive layer may be exposed to a mask corresponding to this layout, to produce latent image of the rows and/or lines. The photosensitive layer is also exposed to the device layer layout to expose unwanted portions of the phase-edge layer. Methods of forming a variety of device features, including contact/via openings and contact/via plugs are disclosed.