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    Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal
    3.
    发明授权
    Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal 失效
    制造具有边缘对准植入物和与上覆金属连接的电极的平面电荷耦合器件的方法

    公开(公告)号：US5719075A

    公开(公告)日：1998-02-17

    申请号：US556551

    申请日：1995-11-13

    申请人： Gilbert Allan Hawkins ,  Robert Leroy Nielsen

    发明人： Gilbert Allan Hawkins ,  Robert Leroy Nielsen

    IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L21/8234 ,  H01L29/762 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L29/66954 ,  H01L21/8234

    摘要： A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform dielectric; then implanting ions of a second conductivity type into the substrate, then patterning closely spaced first conductive strips of a first conductive layer on the dielectric, then further implanting ions of the first or second conductivity type in the regions between said first conductive strips, then depositing uniformly a second conductive layer electrically isolated from the first conductive strips by an insulative region, then entirely removing by uniform planarization those portions of the second conductive layer disposed over regions of the first conductive strips so as to form coplanar, alternating first and thick electrically isolated conductive strips, then depositing a second insulative layer, then electrically connecting selected adjacent first and second conductive strips together to form first and second composite gate electrodes, then further connecting selected composite gate electrodes together with a planar metallic conductor.

    摘要翻译： 制造完全自对准的平面的两相电荷耦合器件的方法包括以下步骤：首先在半导体衬底上形成均匀的电介质; 然后将第二导电类型的离子注入到所述衬底中，然后对所述电介质上的第一导电层的紧密间隔的第一导电条进行图案化，然后在所述第一导电条之间的区域中进一步注入所述第一或第二导电类型的离子，然后沉积 均匀地通过绝缘区域与第一导电带电隔离的第二导电层，然后通过均匀平坦化完全去除设置在第一导电条的区域上的第二导电层的那些部分，以形成共面交替的第一和厚电隔离 然后沉积第二绝缘层，然后将所选择的相邻的第一和第二导电条电连接在一起以形成第一和第二复合栅极电极，然后将所选择的复合栅极电极与平面金属导体连接在一起。