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    Method of semiconductor processing
    3.
    发明授权
    Method of semiconductor processing 失效
    半导体处理方法

    公开(公告)号：US08440513B2

    公开(公告)日：2013-05-14

    申请号：US12198222

    申请日：2008-08-26

    申请人： Tetsuo Ono ,  Go Saito

    发明人： Tetsuo Ono ,  Go Saito

    IPC分类号： H01L21/302 ,  H01L21/3065

    CPC分类号： H01L21/31138 ,  H01L21/02071 ,  H01L21/28123 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

    摘要： In a semiconductor that has a structure in which a work function controlling metal conductor is provided on a high dielectric insulation film, fine processing is performed without deteriorating a device. In a method of semiconductor processing, in which the semiconductor has an insulation film containing Hf or Zr formed on a semiconductor substrate and a conductor film containing Ti or Ta or Ru formed on an insulation film, and the conductor film is processed by using a resist formed on the conductor film under a plasma atmosphere, the resist is removed under the plasma atmosphere of gas that contains hydrogen and does not contain oxygen.

    摘要翻译： 在具有在高介电绝缘膜上设置功函数控制金属导体的结构的半导体中，进行精细处理而不会使器件恶化。 在半导体处理方法中，其中半导体具有包含在半导体衬底上形成的Hf或Zr的绝缘膜和在绝缘膜上形成的含有Ti或Ta或Ru的导体膜，并且通过使用抗蚀剂来处理导体膜 在等离子体气氛下在导体膜上形成，在含氢气体的等离子体气氛下除去抗蚀剂，不含氧。

    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
    4.
    发明申请
    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
    等离子体处理方法和等离子体处理装置

    公开(公告)号：US20100004795A1

    公开(公告)日：2010-01-07

    申请号：US12199838

    申请日：2008-08-28

    申请人： Takehisa IWAKOSHI ,  Go Saito

    发明人： Takehisa IWAKOSHI ,  Go Saito

    IPC分类号： G05D23/00 ,  G06F17/10

    CPC分类号： H01L21/67248 ,  H01J37/32935 ,  H01J37/3299

    摘要： The invention provides a plasma processing apparatus capable of setting the temperature of the plasma processing chamber accurately to a specific state, and to perform highly accurate plasma processing while maintaining a constant plasma processing property. The plasma processing apparatus for subjecting a sample w to be processed to plasma processing within a plasma processing chamber 1 comprises a database 25 for correlating and storing the inner temperature of the plasma processing chamber 1 and the plasma generating condition, a model expression storage unit 26 for storing the correlating equation of the inner temperature of the plasma processing chamber 1 and the plasma generating condition from the database 25, and a computing machine 21 having an operation unit 24 for creating the correlation equation and the optimum plasma generating condition, further having a process monitor 31 for monitoring the condition of plasma processing, wherein the value output by the process monitor and the temperature of the plasma processing chamber are correlated and stored in the database 25, and the computing machine 21 computes a plasma processing condition capable of realizing a substantially constant plasma processing chamber temperature, based on which the plasma processing chamber performs plasma processing.

    摘要翻译： 本发明提供一种能够将等离子体处理室的温度精确地设定为特定状态的等离子体处理装置，并且在保持恒定的等离子体处理性的同时进行高精度的等离子体处理。 用于使等离子体处理室1内的待处理样品w进行等离子体处理的等离子体处理装置包括用于使等离子体处理室1的内部温度和等离子体生成条件相关和存储的数据库25，模型表达式存储单元26 用于存储等离子体处理室1的内部温度和来自数据库25的等离子体产生条件的相关方程式以及具有用于产生相关方程和最佳等离子体产生条件的操作单元24的计算机21，还具有 处理监视器31，用于监视等离子体处理的状态，其中由过程监视器输出的值和等离子体处理室的温度相关联并存储在数据库25中，并且计算机21计算能够实现 基本恒定的等离子体处理室温度，基于o n等离子体处理室进行等离子体处理。

    Plasma etching apparatus and plasma etching method
    5.
    发明授权
    Plasma etching apparatus and plasma etching method 失效
    等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US07396771B2

    公开(公告)日：2008-07-08

    申请号：US11362867

    申请日：2006-02-28

    申请人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

    发明人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/32137 ,  H01L21/67248 ,  H01L21/67253

    摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

    摘要翻译： 一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应 用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由 样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度 样品架独立控制。

    DRY ETCHING METHOD
    6.
    发明申请
    DRY ETCHING METHOD 有权
    干蚀刻方法

    公开(公告)号：US20130015158A1

    公开(公告)日：2013-01-17

    申请号：US13210446

    申请日：2011-08-16

    申请人： Tomoyoshi Ichimaru ,  Kenichi Kuwabara ,  Go Saito

    发明人： Tomoyoshi Ichimaru ,  Kenichi Kuwabara ,  Go Saito

    IPC分类号： C23F1/02

    CPC分类号： H01L21/28079 ,  H01J37/32192 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66545

    摘要： The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.

    摘要翻译： 本发明提供了一种干式蚀刻方法，其能够容易地提供在通过去除虚拟材料形成的沟槽和通孔处的称为顶部圆形的圆形顶部边缘部分。 本发明的方法是通过去除其周围被层间氧化膜包围的虚拟材料形成沟槽或通孔的干蚀刻方法，该方法包括以下步骤：将虚拟材料蚀刻至预定深度，执行各向同性蚀刻 虚拟材料蚀刻，并且在各向同性蚀刻之后除去虚拟材料的剩余部分。

    PLASMA ETCHING METHOD
    7.
    发明申请
    PLASMA ETCHING METHOD 审中-公开
    等离子体蚀刻法

    公开(公告)号：US20120003838A1

    公开(公告)日：2012-01-05

    申请号：US12855265

    申请日：2010-08-12

    申请人： Kazumasa Ookuma ,  Akito Kouchi ,  Kenichi Kuwahara ,  Michikazu Morimoto ,  Go Saito

    发明人： Kazumasa Ookuma ,  Akito Kouchi ,  Kenichi Kuwahara ,  Michikazu Morimoto ,  Go Saito

    IPC分类号： H01L21/308 ,  H01L21/3065

    CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/31138

    摘要： Line-wiggling and striation caused by collapse of a pattern after a silicon dioxide film is etched by plasma with the use of a multilayer resist mask are prevented or suppressed. In a plasma etching method of etching a film to be etched by plasma with the use of a multilayer resist mask, the multilayer resist mask includes an upper layer resist, an inorganic intermediate film, and a lower layer resist, and the method includes a side wall protective film forming step of forming a side wall protective film on a side wall of the lower layer resist.

    摘要翻译： 防止或抑制通过使用多层抗蚀剂掩模通过等离子体蚀刻二氧化硅膜之后的图案的塌陷引起的线条摆动和条纹。 在使用多层抗蚀剂掩模蚀刻由等离子体蚀刻的膜的等离子体蚀刻方法中，多层抗蚀剂掩模包括上层抗蚀剂，无机中间膜和下层抗蚀剂，该方法包括侧面 在下层抗蚀剂的侧壁上形成侧壁保护膜的壁保护膜形成工序。

    Plasma processing method
    10.
    发明授权
    Plasma processing method 有权
    等离子体处理方法

    公开(公告)号：US08580689B2

    公开(公告)日：2013-11-12

    申请号：US13210446

    申请日：2011-08-16

    申请人： Tomoyoshi Ichimaru ,  Kenichi Kuwabara ,  Go Saito

    发明人： Tomoyoshi Ichimaru ,  Kenichi Kuwabara ,  Go Saito

    IPC分类号： H01L21/302

    CPC分类号： H01L21/28079 ,  H01J37/32192 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66545

    摘要： The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.

    摘要翻译： 本发明提供了一种干式蚀刻方法，其能够容易地提供在通过去除虚拟材料形成的沟槽和通孔处的称为顶部圆形的圆形顶部边缘部分。 本发明的方法是通过去除其周围被层间氧化膜包围的虚拟材料形成沟槽或通孔的干蚀刻方法，该方法包括以下步骤：将虚拟材料蚀刻至预定深度，执行各向同性蚀刻 虚拟材料蚀刻，并且在各向同性蚀刻之后除去虚拟材料的剩余部分。