公开(公告)号：US20120012835A1

公开(公告)日：2012-01-19

申请号：US12836217

申请日：2010-07-14

申请人： Gregory Herman ,  Jer-shen Maa ,  Kanan Puntambekar ,  Apostolos T. Voutsas

发明人： Gregory Herman ,  Jer-shen Maa ,  Kanan Puntambekar ,  Apostolos T. Voutsas

IPC分类号： H01L29/786 ,  H01L21/34 ,  H01L21/336 ,  H01L29/12

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L29/66969

摘要： A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant.

摘要翻译： 顶栅和底栅薄膜晶体管（TFT）具有相关的制造方法。 TFT由衬底和覆盖衬底的活性金属氧化物半导体（MOS）层制成。 源极/漏极（S / D）区域形成为与有源MOS层接触。 沟道区域插入在S / D区域之间。 TFT包括栅极电极和介于沟道区域和栅电极之间的栅极电介质。 有源MOS层可以是ZnOx，InOx，GaOx，SnOx或上述材料的组合。 有源MOS层还包括主要掺杂剂如H，K，Sc，La，Mo，Bi，Ce，Pr，Nd，Sm，Dy或上述掺杂剂的组合。 有源MOS层还可以包括第二掺杂剂。

公开(公告)号：US08513720B2

公开(公告)日：2013-08-20

申请号：US12836217

申请日：2010-07-14

申请人： Gregory S. Herman ,  Jer-shen Maa ,  Kanan Puntambekar ,  Apostolos T. Voutsas

发明人： Gregory S. Herman ,  Jer-shen Maa ,  Kanan Puntambekar ,  Apostolos T. Voutsas

IPC分类号： H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L29/66969

摘要： A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant.

摘要翻译： 顶栅和底栅薄膜晶体管（TFT）具有相关的制造方法。 TFT由衬底和覆盖衬底的活性金属氧化物半导体（MOS）层制成。 源极/漏极（S / D）区域形成为与有源MOS层接触。 沟道区域插入在S / D区域之间。 TFT包括栅极电极和介于沟道区域和栅电极之间的栅极电介质。 有源MOS层可以是ZnOx，InOx，GaOx，SnOx或上述材料的组合。 有源MOS层还包括主要掺杂剂如H，K，Sc，La，Mo，Bi，Ce，Pr，Nd，Sm，Dy或上述掺杂剂的组合。 有源MOS层还可以包括第二掺杂剂。

公开(公告)号：US20120146002A1

公开(公告)日：2012-06-14

申请号：US12968102

申请日：2010-12-14

申请人： Lisa H. Stecker ,  Kanan Puntambekar ,  Kurt Ulmer

发明人： Lisa H. Stecker ,  Kanan Puntambekar ,  Kurt Ulmer

IPC分类号： H01L51/30 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L51/00 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/105

摘要： A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H2 or N2 plasma, a self-assembled organic monolayer is formed overlying the S/D electrodes. Finally, an active organic semiconductor layer is formed over the S/D electrodes and gate dielectric channel interface. The OTFT may be exposed to plasma either before or after the formation of the S/D electrodes.

摘要翻译： 在有机薄膜晶体管（OTFT）的制造中提供了一种制备用于沉积有机半导体材料的界面的方法。 提供衬底并且形成覆盖衬底的栅电极。 在栅电极上形成栅极电介质。 然后，源极（S）和漏极（D）电极形成在栅极电介质上方，暴露在S / D电极之间的栅介质沟道界面区域。 在将OTFT暴露于H 2或N 2等离子体之后，形成覆盖S / D电极的自组装有机单层。 最后，在S / D电极和栅介质通道界面上形成有源有机半导体层。 在形成S / D电极之前或之后，OTFT可能暴露于等离子体。

公开(公告)号：US09093475B2

公开(公告)日：2015-07-28

申请号：US13733196

申请日：2013-01-03

申请人： Kurt Ulmer ,  Kanan Puntambekar

发明人： Kurt Ulmer ,  Kanan Puntambekar

IPC分类号： H01L21/20 ,  H01L29/66 ,  H01L21/768 ,  H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L27/12 ,  H01L51/00 ,  H01L21/288

CPC分类号： H01L29/66742 ,  H01L21/288 ,  H01L21/768 ,  H01L27/1292 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78696 ,  H01L51/0022

摘要： A method is provided for forming a printed top gate thin film transistor (TFT) with a short channel length. The method provides a substrate with a low surface energy top surface. A metal ink line is continuously printed across a region of the substrate top surface, and in response to the surface tension of the printed metal ink, discrete spherical ink caps are formed in the region. Then, the surface energy of the substrate top surface in the region is increased. A source metal ink line is printed overlying a source spherical ink cap contact, and a drain metal ink line, parallel to the source metal ink line, is printed overlying a drain spherical ink cap contact. After depositing a semiconductor film, a channel is formed in the semiconductor film between the source and drain spherical ink cap contacts having a channel length equal to the first distance.

摘要翻译： 提供一种用于形成具有短沟道长度的印刷顶栅薄膜晶体管（TFT）的方法。 该方法提供具有低表面能顶面的基底。 金属墨水线在衬底顶表面的区域上连续印刷，并且响应于印刷金属油墨的表面张力，在该区域中形成离散的球形油墨盖。 然后，该区域中的基板顶面的表面能增大。 源金属墨水线被印刷在源球形墨水帽接触件上方，并且平行于源极金属墨水线的漏极金属墨水线被印刷在排出的球形墨水帽接触件上。 在沉积半导体膜之后，在沟道长度等于第一距离的源极和漏极球形墨帽触点之间的半导体膜中形成沟道。

公开(公告)号：US20140158399A1

公开(公告)日：2014-06-12

申请号：US13711192

申请日：2012-12-11

申请人： Kurt Ulmer ,  Kanan Puntambekar ,  Lisa H. Stecker

发明人： Kurt Ulmer ,  Kanan Puntambekar ,  Lisa H. Stecker

IPC分类号： H05K3/00 ,  H05K1/02

CPC分类号： H05K3/225 ,  H05K3/125 ,  H05K2203/173

摘要： A method is provided for repairing defects in a contact printed circuit. The method provides a substrate with a contact printed circuit formed on a substrate top surface. After detecting a discontinuity in a printed circuit feature, a bias voltage is applying to at least one of a first region of the printed circuit feature or a second region of the printed circuit feature. The bias voltage may also be applied to both the first and second regions. An electric field is formed between the bias voltage and an ink delivery nozzle having a voltage potential less than the bias voltage. Conductive ink is attracted into the electric field from the ink delivery nozzle. Conductive is printed ink on the discontinuity, forming a conductive printed bridge. Typically, the ink delivery nozzle is an electrohydrodynamic (EHD) printing nozzle.

摘要翻译： 提供一种用于修复接触式印刷电路中的缺陷的方法。 该方法提供了在基板顶表面上形成有接触印刷电路的基板。 在检测到印刷电路特征中的不连续性之后，偏压被施加到印刷电路特征的第一区域或印刷电路特征的第二区域中的至少一个。 偏置电压也可以施加到第一和第二区域。 在偏置电压和具有小于偏置电压的电压电位的墨水输出喷嘴之间形成电场。 导电油墨从油墨输送喷嘴吸入电场。 导电印刷油墨在不连续处，形成导电印刷桥。 通常，墨水输送喷嘴是电动液压（EHD）印刷喷嘴。

公开(公告)号：US08399290B2

公开(公告)日：2013-03-19

申请号：US13009806

申请日：2011-01-19

申请人： Kanan Puntambekar ,  Lisa H. Stecker ,  Kurt Ulmer

发明人： Kanan Puntambekar ,  Lisa H. Stecker ,  Kurt Ulmer

IPC分类号： H01L21/40

CPC分类号： H01L51/0516 ,  H01L51/0012 ,  H01L51/0545 ,  H01L51/0558

摘要： A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

摘要翻译： 提供了一种使用氟聚合物分层结晶井制造具有图案化有机半导体的印刷有机薄膜晶体管（OTFT）的方法。 在底栅OTFT的情况下，提供衬底并且形成覆盖衬底的栅电极。 形成覆盖栅电极的栅极电介质，并且覆盖栅极电介质形成源极（S）和漏极（D）电极。 在S / D电极之间形成栅极介电OTFT沟道界面区域。 然后形成具有氟聚合物封存和结晶团的阱，以限定有机半导体印刷区域。 该阱填充有机半导体，覆盖S / D电极和栅极介电OTFT通道界面。 然后，有机半导体结晶。 主要晶粒成核起源于覆盖S / D电极的区域。 结果，形成介于S / D电极之间的有机半导体沟道。

公开(公告)号：US08803139B2

公开(公告)日：2014-08-12

申请号：US13768708

申请日：2013-02-15

申请人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

发明人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

IPC分类号： H01L29/08 ,  H01L51/05

CPC分类号： H01L51/0516 ,  H01L51/0012 ,  H01L51/0545 ,  H01L51/0558

摘要： A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

摘要翻译： 提供了一种使用氟聚合物分层结晶井制造具有图案化有机半导体的印刷有机薄膜晶体管（OTFT）的方法。 在底栅OTFT的情况下，提供衬底并且形成覆盖衬底的栅电极。 形成覆盖栅电极的栅极电介质，并且覆盖栅极电介质形成源极（S）和漏极（D）电极。 在S / D电极之间形成栅极介电OTFT沟道界面区域。 然后形成具有氟聚合物封存和结晶团的阱，以限定有机半导体印刷区域。 该阱填充有机半导体，覆盖S / D电极和栅极介电OTFT通道界面。 然后，有机半导体结晶。 主要晶粒成核起源于覆盖S / D电极的区域。 结果，形成介于S / D电极之间的有机半导体沟道。

公开(公告)号：US20140054560A1

公开(公告)日：2014-02-27

申请号：US13768708

申请日：2013-02-15

申请人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

发明人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

IPC分类号： H01L51/05

CPC分类号： H01L51/0516 ,  H01L51/0012 ,  H01L51/0545 ,  H01L51/0558

摘要： A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

摘要翻译： 提供了一种使用氟聚合物分层结晶井制造具有图案化有机半导体的印刷有机薄膜晶体管（OTFT）的方法。 在底栅OTFT的情况下，提供衬底并且形成覆盖衬底的栅电极。 形成覆盖栅电极的栅极电介质，并且覆盖栅极电介质形成源极（S）和漏极（D）电极。 在S / D电极之间形成栅极介电OTFT沟道界面区域。 然后形成具有氟聚合物封存和结晶团的阱，以限定有机半导体印刷区域。 该阱填充有机半导体，覆盖S / D电极和栅极介电OTFT通道界面。 然后，有机半导体结晶。 主要晶粒成核起源于覆盖S / D电极的区域。 结果，形成介于S / D电极之间的有机半导体沟道。

公开(公告)号：US20130307073A1

公开(公告)日：2013-11-21

申请号：US13471799

申请日：2012-05-15

申请人： Kurt Ulmer ,  Kanan Puntambekar

发明人： Kurt Ulmer ,  Kanan Puntambekar

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/208

CPC分类号： H01L51/0022 ,  B82Y10/00 ,  H01L21/02628 ,  H01L21/02639 ,  H01L21/288 ,  H01L27/1292 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78696

摘要： A method is provided for controlling the channel length in a thin-film transistor (TFT). The method forms a printed ink first source/drain (S/D) structure overlying a substrate. A fluoropolymer mask is deposited to cover the first S/D structure. A boundary region is formed between the edge of the fluoropolymer mask and the edge of the printed ink first S/D structure, having a width. Then, a primary ink is printed at least partially overlying the boundary region, forming a printed ink second S/D structure, having an edge adjacent to the fluoropolymer mask edge. After removing the fluoropolymer mask, the printed ink first S/D structure edge is left separated from the printed ink second S/D structure edge by a space equal to the boundary region width. A semiconductor channel is formed partially overlying the first and second S/D structures, having a channel length equal to the boundary region width.

摘要翻译： 提供了一种用于控制薄膜晶体管（TFT）中的沟道长度的方法。 该方法形成了覆盖衬底的印刷油墨第一源极/漏极（S / D）结构。 沉积氟聚合物掩模以覆盖第一S / D结构。 在氟聚合物掩模的边缘和具有宽度的印刷油墨第一S / D结构的边缘之间形成边界区域。 然后，将至少部分地覆盖在边界区域上的初级墨水印刷，形成具有与氟聚合物掩模边缘相邻的边缘的印刷油墨第二S / D结构。 在除去含氟聚合物掩模之后，将印刷油墨第一S / D结构边缘与印刷油墨第二S / D结构边缘分开等于边界区宽度的空间。 部分地覆盖第一和第二S / D结构的半导体沟道，其沟道长度等于边界区宽度。

公开(公告)号：US20120181512A1

公开(公告)日：2012-07-19

申请号：US13009806

申请日：2011-01-19

申请人： Kanan Puntambekar ,  Lisa H. Stecker ,  Kurt Ulmer

发明人： Kanan Puntambekar ,  Lisa H. Stecker ,  Kurt Ulmer

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0516 ,  H01L51/0012 ,  H01L51/0545 ,  H01L51/0558

摘要： A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

摘要翻译： 提供了一种使用氟聚合物分层结晶井制造具有图案化有机半导体的印刷有机薄膜晶体管（OTFT）的方法。 在底栅OTFT的情况下，提供衬底并且形成覆盖衬底的栅电极。 形成覆盖栅电极的栅极电介质，并且覆盖栅极电介质形成源极（S）和漏极（D）电极。 在S / D电极之间形成栅极介电OTFT沟道界面区域。 然后形成具有氟聚合物封存和结晶团的阱，以限定有机半导体印刷区域。 该阱填充有机半导体，覆盖S / D电极和栅极介电OTFT通道界面。 然后，有机半导体结晶。 主要晶粒成核起源于覆盖S / D电极的区域。 结果，形成介于S / D电极之间的有机半导体沟道。