摘要:
A method for providing waveguide structures for an energy assisted magnetic recording (EAMR) transducer is described. The waveguide structures have a plurality of widths. At least one waveguide layer is provided. Mask structure(s) corresponding to the waveguide structures and having a pattern are provided on the waveguide layer(s). The mask structure(s) include a planarization stop layer, a planarization assist layer on the planarization stop layer, and a hard mask layer on the planarization assist layer. The planarization assist layer has a low density. The pattern of the mask structure(s) is transferred to the waveguide layer(s). Optical material(s) that cover the waveguide layer(s) and a remaining portion of the mask structure(s) are provided. The optical material(s) have a density that is at least twice the low density of the planarization assist layer. The method also includes performing a planarization configured to remove at least a portion of the optical material(s).
摘要:
A method and system for fabricating a magnetic transducer is described. The transducer has device and field regions, and a magnetoresistive stack. Hard mask layer and wet-etchable layers are provided on the magnetoresistive stack and hard mask layer, respectively. A hard mask and a wet-etchable mask are formed from the hard mask and the wet-etchable layers, respectively. The hard and wet-etchable masks each includes a sensor portion and a line frame. The sensor portion covers part of the magnetoresistive stack corresponding to a magnetoresistive structure. The line frame covers a part of the magnetoresistive stack in the device region. The magnetoresistive structure is defined in a track width direction. Hard bias material(s) are then provided. Part of the hard bias material(s) is adjacent to the magnetoresistive structure in the track width direction. The wet-etchable sensor portion and line frame, and hard bias material(s) thereon, are removed.
摘要:
A process for fabricating a magnetic recording transducer for use in a data storage system comprises providing a substrate, an underlayer and a first nonmagnetic intermediate layer deposited to a first thickness on and in contact with the underlayer, performing a first scanning polishing on a first section of the first intermediate layer to planarize the first section of the first intermediate layer to a second thickness, providing a main pole in the planarized first section of the first intermediate layer, providing a first pattern of photoresist on and in contact with the first section of the first intermediate layer, the pattern comprising an aperture to define a side shield trench, performing a wet etch to remove at least a portion of the first intermediate layer thereby exposing at least one of the plurality of main pole sides, and depositing side shield material in the side shield trench.
摘要:
A method and system for fabricating a read sensor on a substrate for a read transducer is described. A read sensor stack is deposited on the substrate. A mask is provided on the on the read sensor stack. The mask has a pattern that covers a first portion of the read sensor stack corresponding to the read sensor, covers a second portion of the read sensor stack distal from the read sensor, and exposes a third portion of the read sensor stack between the first and second portions. The read sensor is defined from the read sensor stack. A hard bias layer is deposited. An aperture free mask layer including multiple thicknesses is provided. A focused ion beam scan (FIBS) polishing step is performed on the mask and hard bias layers to remove a portion of the mask and hard bias layers based on the thicknesses.
摘要:
A method and system for providing a pole of magnetic transducer having an intermediate layer are described. The method and system include providing a trench in the intermediate layer and depositing a nonmagnetic liner. A portion of the nonmagnetic liner resides in the trench. At least one seed layer is deposited. A portion of the at least one seed layer resides in the trench. The method and system include depositing at least one main pole layer. The at least one main pole layer is magnetic. A portion of the main pole layer(s) reside in the trench. The method and system also include performing a first chemical mechanical planarization (CMP). An excess portion of the seed layer(s) external to the trench are removed through an ion beam etch. The method and system further include performing a second CMP to remove an excess portion of the nonmagnetic liner external to the trench.
摘要:
Embodiments of the present invention relate to reducing the size variation on a wafer fabrication. In some embodiments, at least a portion the backfill material over features larger than a threshold size is etched or milled to provide backfill protrusions over those features. The backfill protrusions are configured to reduce the size variation across the fabrication. Embodiments of the invention may be used in fabrication of many types of devices, such as tapered wave guides (TWG), near-field transducers (NFT), MEMS devices, EAMR optical devices, optical structures, bio-optical devices, micro-fluidic devices, and magnetic writers.
摘要:
A method and system for fabricating an optical component are described. The method and system include providing a first planarization stopping and a second planarization stopping structure. The first planarization stopping structure has a first height and a first edge. The second planarization stopping structure has a second height different from the first height and a second edge. The first edge is separated from the second edge by a distance. The method and system also include providing an optical material. The optical material resides at least between the first edge of the first planarization stopping structure and the second edge of the second planarization stopping structure. The method and system also include planarizing the optical components. The planarization removes a portion of the optical material to form a surface between the first planarization stopping structure and the second planarization stopping structure. This surface has a curvature.
摘要:
A method provides a pole of magnetic recording transducer. A nonmagnetic stop layer having a thickness and a top surface is provided. A depression that forms a bevel is provided in the stop layer. The bevel has a depth less than the thickness and a bevel angle with respect to a remaining portion of the top surface. The bevel angle is greater than zero and less than ninety degrees. An intermediate layer having a substantially flat top surface is provided over the stop layer. A trench is formed in the intermediate layer via a removal process. The trench has a profile corresponding to the pole. The stop layer is a stop for the removal process. The method also includes providing the pole in the trench. The pole has a leading edge bevel corresponding to the bevel in the stop layer.
摘要:
The method and system for providing a magnetoresistive device are described. The method and system include depositing a plurality of magnetoresistive element layers which cover at least one device area and at least one field area. The method and system also include providing a single layer mask. The single layer mask covers a first portion of the magnetoresistive element layers in the device area(s) and exposes the magnetoresistive element layers in the field area(s). The method and system include defining the magnetoresistive element(s) using the single layer mask and depositing a hard bias layer on the device area(s) and the field area(s) after the magnetic element(s) are defined. The method and system further include performing a planarization after the hard bias layer is deposited.
摘要:
A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.