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    METHOD FOR PRODUCING PHOTOVOLTAIC CELLS AND PHOTOVOLTAIC CELLS OBTAINED BY SUCH METHOD
    1.
    发明申请
    METHOD FOR PRODUCING PHOTOVOLTAIC CELLS AND PHOTOVOLTAIC CELLS OBTAINED BY SUCH METHOD 审中-公开
    用于生产通过这种方法获得的光伏电池和光电池的方法

    公开(公告)号：US20090301557A1

    公开(公告)日：2009-12-10

    申请号：US11855988

    申请日：2007-09-14

    申请人： Guido Agostinelli ,  Guy Beaucarne ,  Patrick Choulat

    发明人： Guido Agostinelli ,  Guy Beaucarne ,  Patrick Choulat

    IPC分类号： H01L31/0216 ,  H01L31/02

    CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method for the production of a photovoltaic device, for instance a solar cell, is disclosed. In one aspect, the method comprises providing a substrate having a front main surface and a rear surface. The method further comprises depositing a dielectric layer on the rear surface, wherein the dielectric layer has a thickness larger than about 100 nm. The method further comprises depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer and forming back contacts through the dielectric layer and the passivation layer. In another aspect, corresponding photovoltaic devices, for instance solar cell devices, are also disclosed.

    摘要翻译： 公开了一种用于生产例如太阳能电池的光伏器件的方法。 一方面，该方法包括提供具有前主表面和后表面的基底。 该方法还包括在后表面上沉积介电层，其中介电层的厚度大于约100nm。 该方法还包括在电介质层的顶部上沉积包括氢化SiN的钝化层，并通过介电层和钝化层形成后接触。 在另一方面，还公开了相应的光伏器件，例如太阳能电池器件。

    Method for the production of thin substrates
    3.
    发明授权
    Method for the production of thin substrates 失效
    薄基板生产方法

    公开(公告)号：US07875531B2

    公开(公告)日：2011-01-25

    申请号：US11736929

    申请日：2007-04-18

    申请人： Frédéric Dross ,  Emmanuel Van Kerschaver ,  Guy Beaucarne

    发明人： Frédéric Dross ,  Emmanuel Van Kerschaver ,  Guy Beaucarne

    IPC分类号： H01L21/30

    CPC分类号： H01L21/30 ,  H01L21/304 ,  H01L31/0392 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.

    摘要翻译： 提供了一种制造厚度低于750微米的薄衬底的方法，包括提供母体衬底，所述母体衬底具有第一主表面和韧性; 在母基板的至少一部分中引起预定应力分布的应力，所述部分包括薄基板，所述感应应力在主表面下的第一深度局部大于母基板的韧性; 使得薄基板从母基板释放，其中母基板在第一深度处的韧性在引起应力之前不降低。 该方法可用于生产例如太阳能电池。

    METHOD FOR THE PRODUCTION OF THIN SUBSTRATES
    4.
    发明申请
    METHOD FOR THE PRODUCTION OF THIN SUBSTRATES 失效
    用于生产薄基板的方法

    公开(公告)号：US20100323472A1

    公开(公告)日：2010-12-23

    申请号：US12872218

    申请日：2010-08-31

    申请人： Frédéric Dross ,  Emmanuel Van Kerschaver ,  Guy Beaucarne

    发明人： Frédéric Dross ,  Emmanuel Van Kerschaver ,  Guy Beaucarne

    IPC分类号： H01L31/18 ,  H01L31/0368 ,  H01L31/0376

    CPC分类号： H01L21/30 ,  H01L21/304 ,  H01L31/0392 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.

    摘要翻译： 提供了一种制造厚度低于750微米的薄衬底的方法，包括提供母体衬底，所述母体衬底具有第一主表面和韧性; 在母基板的至少一部分中引起预定应力分布的应力，所述部分包括薄基板，所述感应应力在主表面下的第一深度局部大于母基板的韧性; 使得薄基板从母基板释放，其中母基板在第一深度处的韧性在引起应力之前不降低。 该方法可用于生产例如太阳能电池。

    METHOD FOR THE PRODUCTION OF THIN SUBSTRATES
    5.
    发明申请
    METHOD FOR THE PRODUCTION OF THIN SUBSTRATES 失效
    用于生产薄基板的方法

    公开(公告)号：US20070249140A1

    公开(公告)日：2007-10-25

    申请号：US11736929

    申请日：2007-04-18

    申请人： Frederic Dross ,  Emmanuel Van Kerschaver ,  Guy Beaucarne

    发明人： Frederic Dross ,  Emmanuel Van Kerschaver ,  Guy Beaucarne

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/30 ,  H01L21/304 ,  H01L31/0392 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.

    摘要翻译： 提供了一种制造厚度低于750微米的薄衬底的方法，包括提供母体衬底，所述母体衬底具有第一主表面和韧性; 在母基板的至少一部分中引起预定应力分布的应力，所述部分包括薄基板，所述感应应力在主表面下的第一深度局部大于母基板的韧性; 使得薄基板从母基板释放，其中母基板在第一深度处的韧性在引起应力之前不降低。 该方法可用于生产例如太阳能电池。

    Photovoltaic cells having metal wrap through and improved passivation
    9.
    发明授权
    Photovoltaic cells having metal wrap through and improved passivation 有权
    具有金属包裹和改善钝化的光伏电池

    公开(公告)号：US09246044B2

    公开(公告)日：2016-01-26

    申请号：US12792624

    申请日：2010-06-02

    申请人： Jozef Szlufcik ,  Christophe Allebe ,  Frederic Dross ,  Guy Beaucarne

    发明人： Jozef Szlufcik ,  Christophe Allebe ,  Frederic Dross ,  Guy Beaucarne

    IPC分类号： H01L31/04 ,  H01L31/18 ,  H01L31/0224

    CPC分类号： H01L31/1804 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02245 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photovoltaic device is disclosed. In one aspect, the device is formed in a semiconductor substrate. It has a radiation receiving front surface and a rear surface. The device may have a first region of one conductivity type, a second region with the opposite conductivity type adjacent to the front surface, and an antireflection layer. The rear surface is covered by a dielectric layer covering also an inside surface of the via. The front surface has current collecting conductive contacts. The rear surface has conductive contacts extending through the dielectric. A conductive path is in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed. The same dielectric serves to insulate, provide thermal protection, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.

    摘要翻译： 公开了一种光电器件。 在一个方面中，器件形成在半导体衬底中。 它具有辐射接收前表面和后表面。 该器件可以具有一种导电类型的第一区域，具有与前表面相邻的相反导电类型的第二区域和抗反射层。 后表面被也覆盖通孔内表面的电介质层覆盖。 前表面具有集流导电触点。 后表面具有延伸穿过电介质的导电触点。 导电路径在通孔中，用于来自前表面的光生电流。 通过使电介质全部结束，不需要对准和掩蔽。 相同的电介质用于绝缘，提供热保护，并有助于表面和体积钝化。 它也避免了需要靠近通孔的结区域，从而减少不必要的复合电流。