Micro-component packaging process and set of micro-components resulting from this process
    1.
    发明申请
    Micro-component packaging process and set of micro-components resulting from this process 有权
    微组件包装过程和由此过程产生的微组件

    公开(公告)号:US20060194364A1

    公开(公告)日:2006-08-31

    申请号:US11288942

    申请日:2005-11-28

    IPC分类号: H01L21/00 H01L21/50 H01L23/02

    摘要: A process for packaging a plurality of micro-components made on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a cover plate; depositing a metal layer on a face of the cover plate or on a face of the wafer; covering the wafer with the cover plate; applying a contact pressure equal to at least one bar onto the cover plate and onto the wafer; and heating the metal layer during pressing until a seal is obtained, each cavity thus being provided with a sealing area and being closed by a part of the cover plate and/or its metal layer.

    摘要翻译: 一种用于包装在相同基板晶片上制成的多个微组件的方法,其中每个微组件封装在空腔中。 该方法包括制作盖板; 在所述盖板的表面上或所述晶片的表面上沉积金属层; 用盖板覆盖晶片; 将等于至少一个棒的接触压力施加到盖板上并到达晶片上; 并且在压制期间加热金属层直到获得密封,因此每个空腔设置有密封区域并由盖板和/或其金属层的一部分封闭。

    Micro-component packaging process and set of micro-components resulting from this process
    2.
    发明授权
    Micro-component packaging process and set of micro-components resulting from this process 有权
    微组件包装过程和由此过程产生的微组件

    公开(公告)号:US07999366B2

    公开(公告)日:2011-08-16

    申请号:US11288942

    申请日:2005-11-28

    IPC分类号: H01L23/02

    摘要: A process for packaging a plurality of micro-components made on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a cover plate; depositing a metal layer on a face of the cover plate or on a face of the wafer; covering the wafer with the cover plate; applying a contact pressure equal to at least one bar onto the cover plate and onto the wafer; and heating the metal layer during pressing until a seal is obtained, each cavity thus being provided with a sealing area and being closed by a part of the cover plate and/or its metal layer.

    摘要翻译: 一种用于包装在相同基板晶片上制成的多个微组件的方法,其中每个微组件封装在空腔中。 该方法包括制作盖板; 在所述盖板的表面上或所述晶片的表面上沉积金属层; 用盖板覆盖晶片; 将等于至少一个棒的接触压力施加到盖板上并到达晶片上; 并且在压制期间加热金属层直到获得密封,因此每个空腔设置有密封区域并由盖板和/或其金属层的一部分封闭。

    Process for packaging micro-components using a matrix
    3.
    发明授权
    Process for packaging micro-components using a matrix 有权
    使用矩阵包装微型组件的方法

    公开(公告)号:US07897436B2

    公开(公告)日:2011-03-01

    申请号:US11289776

    申请日:2005-11-28

    IPC分类号: H01L21/00

    摘要: A process for packaging a number of micro-components on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a covering plate comprising a re-useable matrix, a polymer layer, and a metal layer; covering the wafer with the covering plate; applying a contact pressure equal to at least one bar on the covering plate and on the wafer; heating the metal layer during pressing until sealing is obtained, each cavity thus being provided with a sealing area and closed by metal layer; and dissolving the polymer to recover and recycle the matrix.

    摘要翻译: 在同一衬底晶片上封装多个微组件的方法,其中每个微组件封装在空腔中。 该方法包括制作包括可再利用的基质,聚合物层和金属层的覆盖板; 用盖板覆盖晶片; 在覆盖板和晶片上施加等于至少一个杆的接触压力; 在压制期间加热金属层直到获得密封,因此每个空腔设置有密封区域并被金属层封闭; 并溶解聚合物以回收和再循环基质。

    Process for packaging micro-components using a matrix
    4.
    发明申请
    Process for packaging micro-components using a matrix 有权
    使用矩阵包装微型组件的方法

    公开(公告)号:US20060192260A1

    公开(公告)日:2006-08-31

    申请号:US11289776

    申请日:2005-11-28

    IPC分类号: H01L23/02 H01L21/50

    摘要: A process for packaging a number of micro-components on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a covering plate comprising a re-useable matrix, a polymer layer, and a metal layer; covering the wafer with the covering plate; applying a contact pressure equal to at least one bar on the covering plate and on the wafer; heating the metal layer during pressing until sealing is obtained, each cavity thus being provided with a sealing area and closed by metal layer; and dissolving the polymer to recover and recycle the matrix.

    摘要翻译: 在同一衬底晶片上封装多个微组件的方法,其中每个微组件封装在空腔中。 该方法包括制作包括可再利用的基质,聚合物层和金属层的覆盖板; 用盖板覆盖晶片; 在覆盖板和晶片上施加等于至少一个杆的接触压力; 在压制期间加热金属层直到获得密封,因此每个空腔设置有密封区域并被金属层封闭; 并溶解聚合物以回收和再循环基质。

    Super-resolution optical recording medium
    7.
    发明授权
    Super-resolution optical recording medium 失效
    超分辨率光记录介质

    公开(公告)号:US08092887B2

    公开(公告)日:2012-01-10

    申请号:US12062067

    申请日:2008-04-03

    IPC分类号: B32B3/02

    摘要: The invention relates to the field of optical information recording. According to the invention, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer on top of this superposition, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiO2 dielectric layers. The antimonide layer has a polycrystalline structure with an average crystal grain size between 5 and 50 nanometers. The non-linear behavior of the superposition of three layers under the read laser makes it possible to read information having a size below the theoretical resolution of the reading system.

    摘要翻译: 本发明涉及光信息记录领域。 根据本发明,提出了一种光学存储结构,其包括具有物理标记的基板,其几何构型限定了记录的信息,在基板标记之上叠加三层,在该叠加顶部具有透明保护层, 叠加包括插入在两个ZnS / SiO 2电介质层之间的铟或镓锑化物层。 锑化物层具有平均晶粒尺寸在5至50纳米之间的多晶结构。 在读取激光下三层叠加的非线性行为使得可以读取尺寸低于读取系统的理论分辨率的信息。

    High-Resolution Optical Information Storage Medium
    8.
    发明申请
    High-Resolution Optical Information Storage Medium 审中-公开
    高分辨率光信息存储介质

    公开(公告)号:US20100291338A1

    公开(公告)日:2010-11-18

    申请号:US12526036

    申请日:2008-02-05

    IPC分类号: B32B3/02

    CPC分类号: G11B7/257

    摘要: The invention relates to optical information storage.According to the invention, what is provided is a high-resolution optical information storage structure, comprising a substrate (10) provided with physical marks, the geometric configuration of which defines the information recorded, a superposition of three layers over the top of the marks on the substrate, and a transparent protective layer over the top of this superposition, the superposition comprising an indium antimonide or gallium antimonide layer (14) inserted between two ZnS/SiO2 dielectric layers (12, 16).The information may be prerecorded in the substrate with a resolution (in terms of size and space) better than the theoretical read resolution permitted by the wavelength of the read laser. The non-linearity in behaviour of the three-layer superposition allows the information to be read if the laser power is well chosen.

    摘要翻译: 本发明涉及光信息存储。 根据本发明,提供了一种高分辨率光学信息存储结构,其包括设置有物理标记的基板(10),其几何构型限定记录的信息,在标记的顶部上叠加三层 在该叠加的顶部上的透明保护层,叠加包括插入在两个ZnS / SiO 2电介质层(12,16)之间的锑化铟或锑化镓层(14)。 该信息可以以比读取激光器的波长所允许的理论读取分辨率更高的分辨率(在尺寸和空间上)预先记录在基板中。 如果激光功率被良好选择,则三层叠加的行为的非线性允许读取信息。

    SUPER-RESOLUTION OPTICAL RECORDING MEDIUM
    9.
    发明申请
    SUPER-RESOLUTION OPTICAL RECORDING MEDIUM 失效
    超分辨光学记录介质

    公开(公告)号:US20080273447A1

    公开(公告)日:2008-11-06

    申请号:US12062067

    申请日:2008-04-03

    IPC分类号: G11B7/24

    摘要: The invention relates to the field of optical information recording. According to the invention, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer on top of this superposition, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiO2 dielectric layers. The antimonide layer has a polycrystalline structure with an average crystal grain size between 5 and 50 nanometers. The non-linear behavior of the superposition of three layers under the read laser makes it possible to read information having a size below the theoretical resolution of the reading system.

    摘要翻译: 本发明涉及光信息记录领域。 根据本发明,提出了一种光学存储结构,其包括具有物理标记的基板,其几何构型限定了记录的信息,在基板标记之上叠加三层,在该叠加顶部具有透明保护层, 叠加包括插入在两个ZnS / SiO 2 电介质层之间的铟或镓锑化物层。 锑化物层具有平均晶粒尺寸在5至50纳米之间的多晶结构。 在读取激光下三层叠加的非线性行为使得可以读取尺寸低于读取系统的理论分辨率的信息。