公开(公告)号：US20130074923A1

公开(公告)日：2013-03-28

申请号：US13701714

申请日：2011-07-13

申请人： Gun-Young Jung ,  Ki-Seok Kim ,  Jin-Ju Kim

发明人： Gun-Young Jung ,  Ki-Seok Kim ,  Jin-Ju Kim

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1884 ,  B82Y30/00 ,  B82Y99/00 ,  H01G9/204 ,  H01G9/2059 ,  H01L31/022483 ,  Y02E10/542 ,  Y02P70/521 ,  Y10S977/948

摘要： Provided are a method of preparing a zinc oxide nanostructure electrode and a method of preparing a dye-sensitized solar cell using the same. According to the present invention, the method of preparing a zinc oxide nanostructure electrode may include sequentially forming a superhydrophobic self-assembled layer and a zinc layer on a carrier substrate having a stamp pattern included therein, disposing the zinc layer on the carrier to face a first substrate and performing a stamp method to form at least one zinc pattern on the first substrate, oxidizing the zinc pattern to form zinc oxide seeds, and growing at least one zinc oxide nanostructure from the zinc oxide seeds by using a hydrothermal synthesis method to form a zinc oxide nanostructure electrode composed of the at least one zinc oxide nanostructure.

摘要翻译： 提供制备氧化锌纳米结构电极的方法和使用其制备染料敏化太阳能电池的方法。 根据本发明，制备氧化锌纳米结构电极的方法可以包括在其上包含印模图案的载体基底上顺序形成超疏水自组装层和锌层，将锌层设置在载体上以面对 在第一基板上形成至少一个锌图案的印模方法，氧化锌图案以形成氧化锌晶种，并且通过使用水热合成方法从氧化锌晶种生长至少一种氧化锌纳米结构物以形成 由所述至少一种氧化锌纳米结构构成的氧化锌纳米结构电极。

公开(公告)号：US20110260191A1

公开(公告)日：2011-10-27

申请号：US13094338

申请日：2011-04-26

申请人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

发明人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

IPC分类号： H01L33/60 ,  H01L33/58 ,  B82Y99/00

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L33/22

摘要： The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

摘要翻译： 典型的发光二极管（LED）的光提取效率通过掺入一维ZnO纳米棒得到改善。 与没有纳米棒的LED相比，由于ZnO亚微米的波导效应，光提取效率提高了约31％。 使用简单的非催化湿化学生长法在不含种子层的铟锡氧化物（ITO）顶部接触层上，在低温下制备其他形状的ZnO微晶棒和纳米棒。 通过控制pH值和生长时间，可以容易地改变针状或平顶六边形结构的晶体形态以及ZnO微结构和纳米棒的密度和尺寸。 使用共聚焦扫描电致发光显微镜（CSEM）和微电致发光光谱（MES）观察每个ZnO棒中的波导现象。

公开(公告)号：US20120305069A1

公开(公告)日：2012-12-06

申请号：US13484695

申请日：2012-05-31

申请人： Ki Seok Kim ,  Sang Hoon Nam ,  Hui Su Jeong ,  Hui Song ,  Sang-Mook Kim ,  Won Bae Kim ,  Gun-Young Jung

发明人： Ki Seok Kim ,  Sang Hoon Nam ,  Hui Su Jeong ,  Hui Song ,  Sang-Mook Kim ,  Won Bae Kim ,  Gun-Young Jung

IPC分类号： H01L31/0224 ,  H01L31/0264 ,  B82Y99/00

CPC分类号： B82Y30/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01G9/2036 ,  H01G9/2059 ,  Y02E10/542

摘要： Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.

摘要翻译： 提供了包括氧化锌半球的光电极，其制造方法和使用其的染料敏化太阳能电池。 光电极包括导电基板，设置在导电基板上的氧化锌半球，以及覆盖氧化锌半球的多孔金属氧化物层。 可以增加光电极的光散射效应，并且可以最小化电子的复合损耗以改善光伏特性。

公开(公告)号：US20130052767A1

公开(公告)日：2013-02-28

申请号：US13696490

申请日：2010-07-22

申请人： Ki-Seok Kim ,  Gun-Young Jung

发明人： Ki-Seok Kim ,  Gun-Young Jung

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L33/02

CPC分类号： H01L33/0079

摘要： The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer

摘要翻译： 本发明提供一种垂直型发光二极管的制造方法和将层分离的方法。 结晶棒设置在下层或下基板上。 结晶棒包含ZnO。 在结晶棒上形成发光二极管或发光二极管结构的层，并将下基板分离。 结晶棒在分离过程中溶解。 结晶棒的形成通过形成种子层和基于种子层的选择性生长来实现

公开(公告)号：US20130052532A1

公开(公告)日：2013-02-28

申请号：US13326796

申请日：2011-12-15

申请人： Won-Bae Kim ,  Gun-Young Jung ,  Sang-Hoon Nam ,  Ki-Seok Kim

发明人： Won-Bae Kim ,  Gun-Young Jung ,  Sang-Hoon Nam ,  Ki-Seok Kim

IPC分类号： H01M4/134 ,  H01B1/04 ,  B82Y99/00

CPC分类号： H01M4/0492 ,  B82Y30/00 ,  H01B1/122 ,  H01M4/386 ,  H01M10/052

摘要： An electrode for a battery and a method for manufacturing the same are disclosed. The electrode for a battery according to the present invention comprising silicon nanostructures integrally formed on a silicon thin film and having a period array can reduce the internal resistance, have better charge transport properties, and reduce the structural stress, thereby exhibiting high storage capacity, high efficiency charge/discharge characteristics, and long charge/discharge cycle characteristics. Moreover, the method for manufacturing the electrode for a battery according to the present invention can simply and easily form a nanopattern with nanostructures on a silicon thin film using laser interference lithography (LIL) and dry etching.

摘要翻译： 公开了一种电池用电极及其制造方法。 根据本发明的电池用电极，其一体形成在硅薄膜上并具有周期阵列的硅纳米结构体可以降低内阻，具有更好的电荷传输性能，并且降低结构应力，从而表现出高存储容量，高 效率充放电特性，长充电/放电循环特性。 此外，根据本发明的电池用电极的制造方法可以简单且容易地使用激光干涉光刻（LIL）和干蚀刻在硅薄膜上形成具有纳米结构的纳米图案。

公开(公告)号：US09034676B2

公开(公告)日：2015-05-19

申请号：US13696490

申请日：2010-07-22

申请人： Ki-Seok Kim ,  Gun-Young Jung

发明人： Ki-Seok Kim ,  Gun-Young Jung

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079

摘要： The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer.

摘要翻译： 本发明提供一种垂直型发光二极管的制造方法和将层分离的方法。 结晶棒设置在下层或下基板上。 结晶棒包含ZnO。 在结晶棒上形成发光二极管或发光二极管结构的层，并将下基板分离。 结晶棒在分离过程中溶解。 结晶棒的形成通过形成种子层和基于种子层的选择性生长来实现。

公开(公告)号：US08637186B2

公开(公告)日：2014-01-28

申请号：US13326796

申请日：2011-12-15

申请人： Won-Bae Kim ,  Gun-Young Jung ,  Sang-Hoon Nam ,  Ki-Seok Kim

发明人： Won-Bae Kim ,  Gun-Young Jung ,  Sang-Hoon Nam ,  Ki-Seok Kim

IPC分类号： H01M4/00

CPC分类号： H01M4/0492 ,  B82Y30/00 ,  H01B1/122 ,  H01M4/386 ,  H01M10/052

摘要： An electrode for a battery and a method for manufacturing the same are disclosed. The electrode for a battery according to the present invention comprising silicon nanostructures integrally formed on a silicon thin film and having a period array can reduce the internal resistance, have better charge transport properties, and reduce the structural stress, thereby exhibiting high storage capacity, high efficiency charge/discharge characteristics, and long charge/discharge cycle characteristics. Moreover, the method for manufacturing the electrode for a battery according to the present invention can simply and easily form a nanopattern with nanostructures on a silicon thin film using laser interference lithography (LIL) and dry etching.

摘要翻译： 公开了一种电池用电极及其制造方法。 根据本发明的电池用电极，其一体形成在硅薄膜上并具有周期阵列的硅纳米结构体可以降低内阻，具有更好的电荷传输性能，并且降低结构应力，从而表现出高存储容量，高 效率充放电特性，长充电/放电循环特性。 此外，根据本发明的电池用电极的制造方法可以简单且容易地使用激光干涉光刻（LIL）和干蚀刻在硅薄膜上形成具有纳米结构的纳米图案。

公开(公告)号：US08614452B2

公开(公告)日：2013-12-24

申请号：US13094338

申请日：2011-04-26

申请人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

发明人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

IPC分类号： H01L33/00

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L33/22

摘要： The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

摘要翻译： 典型的发光二极管（LED）的光提取效率通过掺入一维ZnO纳米棒得到改善。 与没有纳米棒的LED相比，由于ZnO亚微米的波导效应，光提取效率提高了约31％。 使用简单的非催化湿化学生长法在不含种子层的铟锡氧化物（ITO）顶部接触层上，在低温下制备其他形状的ZnO微晶棒和纳米棒。 通过控制pH值和生长时间，可以容易地改变针状或平顶六边形结构的晶体形态以及ZnO微结构和纳米棒的密度和尺寸。 使用共焦扫描电致发光显微镜（CSEM）和微电致发光光谱（MES）观察每个ZnO棒中的波导现象。

公开(公告)号：US20050150404A1

公开(公告)日：2005-07-14

申请号：US11065171

申请日：2005-02-23

申请人： Heon Lee ,  Gun-Young Jung

发明人： Heon Lee ,  Gun-Young Jung

IPC分类号： B82B3/00 ,  B81C1/00 ,  G03F7/00 ,  H01L21/027 ,  B41K1/42

CPC分类号： B82Y10/00 ,  B81C99/009 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  Y10T428/24355

摘要： A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.

摘要翻译： 公开了一种硬化的纳米压印印模和形成硬化的纳米压印印模的方法。 硬化的纳米压印印模包括多个硅基纳米尺寸特征，其具有碳化硅，氮化硅或碳化硅氮化物的硬化壳。 通过等离子体渗碳和/或等离子体氮化处理使硬化的壳比下面的硅更硬。 在等离子体工艺期间，碳和/或氮原子轰击并穿透纳米尺寸特征的多个暴露表面并与硅发生化学反应以形成碳化硅，氮化硅或碳化硅氮化物的硬化壳。 提高了所得到的硬化纳米压印印模的寿命，耐久性，经济性和精度。

公开(公告)号：US09081460B2

公开(公告)日：2015-07-14

申请号：US13475341

申请日：2012-05-18

申请人： Huisu Jeong ,  Gun-Young Jung

发明人： Huisu Jeong ,  Gun-Young Jung

IPC分类号： H01B13/00 ,  G06F3/045 ,  B82Y10/00

CPC分类号： G06F3/045 ,  B82Y10/00 ,  G06F2203/04103

摘要： Provided are an electronic device, a method of manufacturing the same, and a touch panel including the device. The electronic device includes a nanostructure having a plurality of metal oxide nanorods vertically aligned at predetermined intervals in intersection regions between bottom electrodes and top electrodes that perpendicularly cross each other. The nanorods are formed to the same diameter and the same height so that the electronic device can exhibit uniform performance. Also, a method of manufacturing an electronic device includes selectively vertically growing the same number of metal oxide nanostructures with a uniform size only on the bottom electrodes using a nano-template with a plurality of vertical holes. Furthermore, a touch panel includes a nanostructure having a plurality of piezoelectric nanorods disposed in a plurality of touch cells arranged in a matrix.

摘要翻译： 提供了一种电子设备，其制造方法和包括该设备的触摸面板。 电子器件包括具有多个金属氧化物纳米棒的纳米结构，该金属氧化物纳米棒在底部电极和彼此垂直交叉的顶部电极之间的交叉区域中以预定间隔垂直对准。 纳米棒形成为相同的直径和相同的高度，使得电子器件可以表现出均匀的性能。 此外，制造电子器件的方法包括使用具有多个垂直孔的纳米模板，在底部电极上选择性地垂直生长具有均匀尺寸的相同数量的金属氧化物纳米结构。 此外，触摸面板包括具有布置在矩阵中的多个触摸单元中的多个压电纳米棒的纳米结构。