利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.027 秒)

    LIGHT-EMITTING DIODE HAVING ZINC OXIDE NANORODS AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    LIGHT-EMITTING DIODE HAVING ZINC OXIDE NANORODS AND METHOD OF FABRICATING THE SAME 失效
    具有氧化锌纳米粒子的发光二极管及其制造方法

    公开(公告)号：US20110260191A1

    公开(公告)日：2011-10-27

    申请号：US13094338

    申请日：2011-04-26

    申请人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

    发明人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

    IPC分类号： H01L33/60 ,  H01L33/58 ,  B82Y99/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L33/22

    摘要： The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

    摘要翻译： 典型的发光二极管（LED）的光提取效率通过掺入一维ZnO纳米棒得到改善。 与没有纳米棒的LED相比，由于ZnO亚微米的波导效应，光提取效率提高了约31％。 使用简单的非催化湿化学生长法在不含种子层的铟锡氧化物（ITO）顶部接触层上，在低温下制备其他形状的ZnO微晶棒和纳米棒。 通过控制pH值和生长时间，可以容易地改变针状或平顶六边形结构的晶体形态以及ZnO微结构和纳米棒的密度和尺寸。 使用共聚焦扫描电致发光显微镜（CSEM）和微电致发光光谱（MES）观察每个ZnO棒中的波导现象。

    Light-emitting diode having zinc oxide nanorods and method of fabricating the same
    2.
    发明授权
    Light-emitting diode having zinc oxide nanorods and method of fabricating the same 失效
    具有氧化锌纳米棒的发光二极管及其制造方法

    公开(公告)号：US08614452B2

    公开(公告)日：2013-12-24

    申请号：US13094338

    申请日：2011-04-26

    申请人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

    发明人： Ki-Seok Kim ,  Gun-Young Jung ,  Sang-Mook Kim ,  Mun-Seok Jeong ,  Hyun Jeong

    IPC分类号： H01L33/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L33/22

    摘要： The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

    摘要翻译： 典型的发光二极管（LED）的光提取效率通过掺入一维ZnO纳米棒得到改善。 与没有纳米棒的LED相比，由于ZnO亚微米的波导效应，光提取效率提高了约31％。 使用简单的非催化湿化学生长法在不含种子层的铟锡氧化物（ITO）顶部接触层上，在低温下制备其他形状的ZnO微晶棒和纳米棒。 通过控制pH值和生长时间，可以容易地改变针状或平顶六边形结构的晶体形态以及ZnO微结构和纳米棒的密度和尺寸。 使用共焦扫描电致发光显微镜（CSEM）和微电致发光光谱（MES）观察每个ZnO棒中的波导现象。

    Light emitting diode having multi-cell structure and method of manufacturing the same
    6.
    发明申请
    Light emitting diode having multi-cell structure and method of manufacturing the same 有权
    具有多单元结构的发光二极管及其制造方法

    公开(公告)号：US20130134462A1

    公开(公告)日：2013-05-30

    申请号：US13504522

    申请日：2010-11-02

    申请人： Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    发明人： Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    IPC分类号： H01L33/60 ,  H01L33/36

    CPC分类号： H01L33/60 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016

    摘要： Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.

    摘要翻译： 公开了具有包括多个单电池的多单元结构的发光二极管。 发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率 。 即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

    LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME
    7.
    发明申请
    LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME 审中-公开
    具有波长转换材料层的发光二极管及其制造方法

    公开(公告)号：US20120086040A1

    公开(公告)日：2012-04-12

    申请号：US13376714

    申请日：2010-06-10

    申请人： Kwang-Cheol Lee ,  Jae-Pil Kim ,  Sang-Bin Song ,  Sang-Mook Kim

    发明人： Kwang-Cheol Lee ,  Jae-Pil Kim ,  Sang-Bin Song ,  Sang-Mook Kim

    IPC分类号： H01L33/50

    CPC分类号： H01L33/507 ,  H01L33/501 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

    摘要： Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.

    摘要翻译： 提供一种具有波长转换材料的发光二极管及其制造方法。 发光二极管包括：基座结构; 布置在基底结构上的发光二极管芯片; 以及布置在发光二极管芯片上的波长转换材料层，使得与发光二极管芯片的上表面相邻的区域比与发光二极管芯片的侧表面相邻的区域更厚。 此外，制造发光二极管的方法包括：将发光二极管芯片布置在基底结构上的步骤; 以及在发光二极管芯片上布置含有透光性光固化性材料的波长转换材料层的步骤，使得其与发光二极管芯片的上表面相邻的面积比邻近发光二极管芯片的面积厚 发光二极管芯片的侧面。

    LIGHT EMITTING DIODE HAVING HETEROGENEOUS PROTRUSION STRUCTURES
    8.
    发明申请
    LIGHT EMITTING DIODE HAVING HETEROGENEOUS PROTRUSION STRUCTURES 有权
    具有异质结构的发光二极管

    公开(公告)号：US20140138613A1

    公开(公告)日：2014-05-22

    申请号：US13679698

    申请日：2012-11-16

    申请人： Sang-Mook Kim ,  Jong-Hyeob Baek

    发明人： Sang-Mook Kim ,  Jong-Hyeob Baek

    IPC分类号： H01L33/22 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/005 ,  H01L33/24

    摘要： An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.

    摘要翻译： 本发明的目的是提供一种具有不均匀材料结构的发光二极管及其制造方法，其中通过在之前或之后形成由彼此不同的异质材料构成的凹陷和突出物来改善向外部提取光的效率， 在衬底上形成半导体材料的中间，以提高光提取效率。

    Light emitting diode having multi-cell structure and method of manufacturing the same
    9.
    发明授权
    Light emitting diode having multi-cell structure and method of manufacturing the same 有权
    具有多单元结构的发光二极管及其制造方法

    公开(公告)号：US08710520B2

    公开(公告)日：2014-04-29

    申请号：US13504522

    申请日：2010-11-02

    申请人： Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    发明人： Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    IPC分类号： H01L33/36

    CPC分类号： H01L33/60 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016

    摘要： Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.

    摘要翻译： 公开了具有包括多个单电池的多单元结构的发光二极管。 发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率 。 即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。