公开(公告)号：US06891278B2

公开(公告)日：2005-05-10

申请号：US10644118

申请日：2003-08-20

申请人： Gustav Müller ,  Axel Schubert ,  Karl-Heinz Schlereth ,  Harald Böttner

发明人： Gustav Müller ,  Axel Schubert ,  Karl-Heinz Schlereth ,  Harald Böttner

IPC分类号： B01J19/00 ,  B01L3/00 ,  B01L7/00 ,  B81B7/00 ,  G01N30/02 ,  G01N30/30 ,  G01N30/60 ,  H01L23/38 ,  H01L27/16 ,  H01L35/00 ,  H01L35/28

CPC分类号： B01L7/52 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00819 ,  B01J2219/00873 ,  B01J2219/00934 ,  B01J2219/00961 ,  B01J2219/00981 ,  B01L3/5027 ,  B01L2300/1822 ,  B81B7/0093 ,  G01N30/30 ,  G01N30/6095 ,  G01N2030/025 ,  G01N2030/303 ,  Y10S257/93

摘要： A semiconductor component has at least one Peltier element and at least one thermogenerator element that are thermally coupled to one another via a coupling device. By virtue of the thermal coupling of the Peltier element and the thermogenerator element through the coupling device, it is possible to use the Peltier element to cool a microstructure, in particular an optoelectronic component (e.g. a laser diode). Efficient temperature regulation and efficient operation of an optoelectronic component are thus possible.

摘要翻译： 半导体部件具有通过耦合器件彼此热耦合的至少一个珀耳帖元件和至少一个热发生元件。 由于珀耳帖元件和热电偶元件通过耦合装置的热耦合，可以使用珀尔帖元件来冷却微结构，特别是光电子部件（例如激光二极管）。 因此，有效的温度调节和光电子部件的有效操作是可能的。

公开(公告)号：US07402910B2

公开(公告)日：2008-07-22

申请号：US10789423

申请日：2004-02-27

申请人： Harald Böttner ,  Axel Schubert ,  Martin Jaegle

发明人： Harald Böttner ,  Axel Schubert ,  Martin Jaegle

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： B81C3/001 ,  B23K35/0238 ,  B23K35/264 ,  H01L23/38 ,  H01L23/488 ,  H01L2924/0002 ,  H01L2924/00

摘要： A solder, in particular a thin-film solder, for joining microelectromechanical components, wherein the solder is a eutectic mixture of gold and bismuth. Components and devices joined by a solder of this type are also disclosed, in addition to processes for producing such components or devices.

摘要翻译： 用于接合微电子机械部件的焊料，特别是薄膜焊料，其中焊料是金和铋的共晶混合物。 除了用于制造这种部件或装置的方法之外，还公开了通过这种类型的焊料连接的部件和装置。

公开(公告)号：US07084502B2

公开(公告)日：2006-08-01

申请号：US10773114

申请日：2004-02-04

申请人： Harald Böttner ,  Axel Schubert ,  Joachim Nurnus ,  Martin Jagle

发明人： Harald Böttner ,  Axel Schubert ,  Joachim Nurnus ,  Martin Jagle

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L21/76

CPC分类号： H01L35/32 ,  B81B3/0072 ,  B81C2201/0167 ,  H01L35/04

摘要： A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.

摘要翻译： 一种微机电装置及其制造方法，在基板上具有至少一层，特别是基板上的热电层，所述至少一层的热膨胀系数和基板的热膨胀系数大大不同。 至少一个层耦合到至少一个应力减小装置，用于目标地减小存在于该层中的横向机械应力。 这实现了无应力层或实现无压力生长。

公开(公告)号：US06815244B2

公开(公告)日：2004-11-09

申请号：US10608620

申请日：2003-06-27

申请人： Harald Böttner ,  Axel Schubert ,  Joachim Nurnus ,  Christa Künzel

发明人： Harald Böttner ,  Axel Schubert ,  Joachim Nurnus ,  Christa Künzel

IPC分类号： H01L2106

CPC分类号： H01L35/34 ,  H01L35/16

摘要： A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb)2 (Te, Se)3 layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.