摘要:
A pixel includes a photo-sensitive element for generating charges in response to incident radiation. A transfer gate is positioned between the photo-sensitive element and a sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node and an output connected to a sample stage operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period.
摘要:
A pixel comprises a photo-sensitive element for generating charges in response to incident radiation and a sense node. A transfer gate is positioned between the photo-sensitive element and the sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node. A sample stage is connected to the output of the first buffer amplifier and is operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is being exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period.
摘要:
A pixel includes a photo-sensitive element for generating charges in response to incident radiation. A transfer gate is positioned between the photo-sensitive element and a sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node and an output connected to a sample stage operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period.
摘要:
An image sensor comprises an array of pixels comprising: a pinned photodiode; a first sense node A; a second sense node B; a transfer gate TX connected between the pinned photodiode and the first sense node A; a first reset transistor M3 connected between a voltage reference line Vrst and the second sense node B; a second reset transistor M4 connected between the first sense node A and the second sense node B; and a buffer amplifier M1 having an input connected to the first sense node A. The control logic is arranged to operate the pixels in a low conversion gain mode and in a high conversion gain mode. In each of the conversion gain modes the control logic is arranged to operate one of a first reset control line RS1 and a second reset control line RS2 to continuously switch on one of the first reset transistor M3 and the second reset transistor M4 during a readout period of an operational cycle of the pixels.
摘要:
An analog-to-digital converter for generating an output digital value equivalent to the difference between a first analog signal level (Vres) and a second analog signal level (Vsig) comprises at least one input for receiving the first analog signal level and the second analog signal level, an input for receiving a ramp signal and an input for receiving at least one clock signal. A set of N counters, where N≧2, are arranged to use N clock signals which are offset in phase from one another. A control stage is arranged to enable the N counters based on a comparison of the ramp signal with the first analog signal level (Vres) and the second analog signal level (Vsig). An output stage is arranged to output the digital value which is a function of values accumulated by the N counters during a period when they are enabled.
摘要:
An analog-to-digital converter for generating an output digital value equivalent to the difference between a first analog signal level (Vres) and a second analog signal level (Vsig) comprises at least one input for receiving the first analog signal level and the second analog signal level, an input for receiving a ramp signal and an input for receiving at least one clock signal. A set of N counters, where N≧2, are arranged to use N clock signals which are offset in phase from one another. A control stage is arranged to enable the N counters based on a comparison of the ramp signal with the first analog signal level (Vres) and the second analog signal level (Vsig). An output stage is arranged to output the digital value which is a function of values accumulated by the N counters during a period when they are enabled.
摘要:
A pixel array comprises a plurality of photo-sensitive elements arranged in rows and columns and readout circuitry for reading a value of a photo-sensitive element. Shared readout circuitry is provided for a pair of adjacent photo-sensitive elements. Adjacent instances of the shared readout circuitry are staggered with respect to one another. For a layout having shared readout circuitry for a pair of photo-sensitive elements, adjacent instances of the shared readout circuitry are offset by a horizontal distance of one column and a vertical distance of one row of the array. The shared readout circuitry can serve a pair of adjacent photo-sensitive elements in a row or column of the array, or a pair of photo-sensitive elements which are diagonally adjacent in the array. An improved yield and symmetry results from staggering instances of the shared readout circuitry.
摘要:
A pixel array includes a plurality of pixel structures, with each pixel structure having a photo-sensitive element for generating charge in response to incident light; a charge conversion element; a first transfer gate and a second transfer gate connected in series between the photosensitive element and the charge conversion element or between the photosensitive element and a supply line; and an output stage. A first transfer gate control line is connected to the first transfer gates of a first sub-set of the pixel structures in the array; and a second transfer gate control line connected to the second transfer gates of a second sub-set of the pixel structures in the array. The first sub-set of pixel structures and second sub-set of pixel structures partially overlap, having at least one pixel structure in common between them.
摘要:
A pixel structure comprises a photo-sensitive element for generating charge in response to incident light. A first transfer gate is connected between the photo-sensitive element and a first charge conversion element. A second transfer gate is connected between the photo-sensitive element and a second charge conversion element. An output stage outputs a first value related to charge at the first charge conversion element and outputs a second value related to charge at the second charge conversion element. A controller controls operation of the pixel structures and causes a pixel structure. The controller causes the pixel structure to: acquire charges on the photo-sensitive element during an exposure period; transfer a first portion of the charges acquired during the exposure period from the photo-sensitive element to the first charge conversion element via the first transfer gate; and transfer a second portion of the charges acquired during the exposure period from the photo-sensitive element to the second charge conversion element via the second transfer gate.
摘要:
A system and method for estimating remaining run-time of an autonomous system by indirect measure is disclosed. In one aspect, the system includes a load circuit, an energy storage system (ESS) and an energy storage management system (ESM). The load circuit includes functional blocks. The ESS stores electric energy and is connected to the load circuit and configured to supply the varying electric current to the load circuit. The ESM is configured to estimate a remaining run-time of the autonomous system. The ESM includes an input connected to one of the functional blocks of the load circuit from which a first parameter being an indirect measure for the varying electric current supplied from the energy storage system to the load circuit is received. The ESM determines the remaining run-time from this first parameter.