公开(公告)号：US10593357B2

公开(公告)日：2020-03-17

申请号：US16161136

申请日：2018-10-16

申请人： Headway Technologies, Inc.

发明人： Junjie Quan ,  Glen Garfunkel ,  Yewhee Chye ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/39

摘要： A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.

公开(公告)号：US20190051321A1

公开(公告)日：2019-02-14

申请号：US16161136

申请日：2018-10-16

申请人： Headway Technologies, Inc.

发明人： Junjie Quan ,  Glen Garfunkel ,  Yewhee Chye ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/3932 ,  G11B5/3951 ,  G11B2005/3996

摘要： A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.

公开(公告)号：US09799357B1

公开(公告)日：2017-10-24

申请号：US15345813

申请日：2016-11-08

申请人： Headway Technologies, Inc.

发明人： Ruhang Ding ,  Yewhee Chye ,  Wenyu Chen ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/3932 ,  G11B5/398

摘要： A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. Above the AFM layer is an AP2/AFM coupling layer/AP1 stack that extends from an air bearing surface to the MR sensor backside. The AP2 layer is pinned by the AFM layer, and the AP1 layer serves as a reference layer to an overlying free layer during a read operation. The AP1 and AP2 layers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width “w” between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP1/AP2 layers lie under the free layer and have a track width less than “w”. The bottom shield may have an anti-ferromagnetic coupling structure. A process flow is provided for fabricating the MR sensor.

公开(公告)号：US09761254B2

公开(公告)日：2017-09-12

申请号：US15363168

申请日：2016-11-29

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhi Gang Bai

IPC分类号： G11B5/39 ,  G11B5/11 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  H01L43/02 ,  H01L43/08

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA), which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization, and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After forming a sensor sidewall that stops in the seed layer or on the bottom shield, a conformal insulation layer is deposited. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

公开(公告)号：US09558765B2

公开(公告)日：2017-01-31

申请号：US15162059

申请日：2016-05-23

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  G11B5/127 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  G11B5/33 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01F1/057 ,  G11B5/00 ,  H01F10/32

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.

摘要翻译： 公开了具有种子/ FGL /间隔物/ SIL /封盖结构的自旋转移振荡器（STO），其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强垂直磁各向异性 （A1 / A2）YFeCo层叠场产生层（FGL）中的（PMA）。 自旋注入层（SIL）可以层叠有（A1 / A2）XFeCo构型。 SIL中的FeCo层与（A1 / A2）X层叠体交换（x为5〜50），以提高坚固性。 FGL中的（A1 / A2）Y层叠体（y = 5〜30）可以与高B层交换耦合，以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO通常形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US09515253B2

公开(公告)日：2016-12-06

申请号：US14748872

申请日：2015-06-24

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Junjie Quan ,  Yewhee Chye ,  Min Li

IPC分类号： H01L43/10 ,  G01R33/09 ,  H01L43/08 ,  H01L29/82 ,  H01L43/02

CPC分类号： H01L43/10 ,  G01R33/093 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

摘要： A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.

公开(公告)号：US20160180869A1

公开(公告)日：2016-06-23

申请号：US14577470

申请日：2014-12-19

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Junjie Quan ,  Min Li

IPC分类号： G11B5/39 ,  C23C14/34

CPC分类号： G11B5/3909 ,  C23C14/34 ,  G01R33/096 ,  G01R33/098 ,  G11B5/3163 ,  H01F10/3254 ,  H01F41/307

摘要： A method of forming a magnetoresistive (MR) sensor with a composite tunnel barrier comprised primarily of magnesium oxynitride and having a MR ratio of at least 70%, resistance x area (RA) product

摘要翻译： 一种形成磁阻（MR）传感器的方法，该传感器主要由氮氧化镁组成，并且MR比率至少为70％，电阻x面积（RA）积<1欧姆 - 米2，并且比常规 公开了MgO层。 该方法包括形成Mg / MgON / Mg，Mg / MgON / MgN，MgN / MgON / MgN或MgN / MgON / Mg中间隧道势垒层，然后退火以将松散结合的氧驱动到相邻层中，从而形成MgO / MgON / Mg，MgO / MgON / MgON，MgON / MgON / MgON和MgON / MgON / MgO复合隧道势垒，其中中间MgON层中的氧含量大于上，下MgON层中的氧含量。 中间隧道势垒中的MgON层可以通过溅射工艺形成，然后进行自然氧化步骤，其厚度大于Mg和MgN层。

公开(公告)号：US09281469B2

公开(公告)日：2016-03-08

申请号：US14580329

申请日：2014-12-23

申请人： Headway Technologies, Inc.

发明人： Junjie Quan ,  Kunliang Zhang ,  Min Li ,  Hui-Chuan Wang

IPC分类号： H01L43/10 ,  H01L43/12 ,  G01R33/09 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/10 ,  G01R33/098 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： The blocking temperature of the AFM layer in a TMR sensor has been raised by inserting a magnetic seed layer between the AFM layer and the bottom shield. This gives the device improved thermal stability, including improved SNR and BER.

摘要翻译： 通过在AFM层和底部屏蔽之间插入磁性种子层，提高了TMR传感器中AFM层的阻挡温度。 这提供了设备改进的热稳定性，包括改进的SNR和BER。

公开(公告)号：US09214170B2

公开(公告)日：2015-12-15

申请号：US14699121

申请日：2015-04-29

申请人： Headway Technologies, Inc.

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/39

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/12

摘要： A high performance TMR sensor is fabricated by employing a free layer comprised of CoNiFeB or CoNiFeBM where M is V, Ti, Zr, Nb, Hf, Ta, or Mo and the M content in the alloy is

摘要翻译： 通过采用由CoNiFeB或CoNiFeBM构成的自由层制造高性能TMR传感器，其中M为V，Ti，Zr，Nb，Hf，Ta或Mo，合金中的M含量为<10原子％。 自由层可以具有FeCo / FeB / CoNiFeB，FeCo / CoFe / CoNiFeB，FeCo / CoFeB / CoNiFeB或FeCo / CoNiFeB / CoFeB构型。 可以通过CoNiFeM共溅射CoB来形成CoNiFeBM层。 在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。 CoNiFeB或CoNiFeBM层的磁致伸缩（λ）值介于-5×10-6和5×10-6之间。

公开(公告)号：US09208801B2

公开(公告)日：2015-12-08

申请号：US13645958

申请日：2012-10-05

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： H01F10/32 ,  G11B5/33 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  G11B5/127 ,  G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  H01F1/057 ,  G11B5/00

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

摘要翻译： 公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA） 在叠层（A1 / A2）X层叠自旋注入层（SIL）中。 场发生层（FGL）由高Bs材料如FeCo制成。 或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。