CONTENT ADDRESSABLE MEMORY CIRCUITS WITH THRESHOLD SWITCHING MEMRISTORS

    公开(公告)号:US20210035640A1

    公开(公告)日:2021-02-04

    申请号:US16526455

    申请日:2019-07-30

    IPC分类号: G11C15/04

    摘要: A content addressable memory (CAM) structure is provided. The CAM comprises a plurality of CAM cells communicatively coupled to processing circuitry. A plurality of threshold switching (TS) memristors are included, each configured to connect to a one of the plurality of CAM cells, with the first end connected to the CAM cell and the second connected to a match line. A discharge transistor is included and configured to discharge any charge on the match line in response to the CAM receiving a command to perform a search.

    ITERATIVE PROGRAMMING OF ANALOG CONTENT ADDRESSABLE MEMORY

    公开(公告)号:US20230137079A1

    公开(公告)日:2023-05-04

    申请号:US17514847

    申请日:2021-10-29

    IPC分类号: G11C27/00 G11C15/04

    摘要: Embodiments of the disclosure provide a system, method, or computer readable medium for programming a target analog voltage range of an analog content addressable memory (aCAM) row. The method may comprise calculating a threshold current sufficient to switch a sense amplifier (SA) on and discharge a match line (ML) connected to a cell of the aCAM; and based on calculating the threshold current, programming a match threshold value by setting a memristor conductance in association with the target analog voltage range applied to a data line (DL) input. The target analog voltage range may comprise a target analog voltage range vector.

    INEQUALITY CHECK WITH TERNARY CAM
    3.
    发明公开

    公开(公告)号:US20240363163A1

    公开(公告)日:2024-10-31

    申请号:US18308990

    申请日:2023-04-28

    IPC分类号: G11C15/04 G11C13/00

    CPC分类号: G11C15/046 G11C13/0069

    摘要: Systems and methods are provided for implementing a low power and area ternary content addressable memory (TCAM). An example of a TCAM comprises a match line, and a plurality of TCAM cells connected along the match line. Each TCAM cell stores a state of a threshold value. The TCAM cells are configured to pull down a signal over the match line in response to inequality between an input search and the threshold value. The plurality of TCAM cells comprises a number of TCAM cells that is less than the threshold value. The input values can be encoded according to a first encoding scheme and the threshold value can be encoded according to one of a second and a third encoding scheme based on an inequality check mapped to the plurality of TCAM cells.

    CURRENT INPUT ANALOG CONTENT ADDRESSABLE MEMORY

    公开(公告)号:US20240111490A1

    公开(公告)日:2024-04-04

    申请号:US17953595

    申请日:2022-09-27

    IPC分类号: G06F7/544 G06F17/16 G11C15/04

    摘要: Systems and methods are provided for employing a current input analog content addressable memory (CI-aCAM). The CI-aCAM is particularly structured as aCAM that allows the analog signal that is input into the aCAM cell to be received as current. A larger hardware architecture that combines two core analog compute circuits, namely a dot product engine (DPE) circuit for matrix multiplications and an aCAM circuit for search operations can also be realized using the disclosed CI-aCAM. For instance, a DPE circuit, which output current signals, can be directly connected with the input of a CI-aCAM, which is designed to receive current signals in a manner that eliminates conversion steps and circuits (e.g., analog to digital and current to voltage). By leveraging CI-aCAMs, a combined DPE-aCAM hardware architecture can be a realized as a substantially compact structure.

    METHODS AND SYSTEMS FOR HIGHLY OPTIMIZED MEMRISTOR WRITE PROCESS

    公开(公告)号:US20210125667A1

    公开(公告)日:2021-04-29

    申请号:US16667773

    申请日:2019-10-29

    IPC分类号: G11C13/00

    摘要: Systems and methods for providing write process optimization for memristors are described. Write process optimization circuitry manipulates the memristor's write operation, allowing the number of cycles in the write process is reduced. Write process optimization circuitry can include write current integration circuitry that measures an integral of a write current over time. The write optimization circuitry can also include shaping circuitry. The shaping circuitry can shape a write pulse, by determining the pulse's termination, width, and slope. The write pulse is shaped depending upon whether the target memristor device exhibits characteristics of “maladroit” cells or “adroit” cells. The pulse shaping circuitry uses the integral and measured write current to terminate the write pulse in a manner that allows the memristor, wherein having maladroit cells and adroit cells, to reach a target state. Thus, utility of memristors is enhanced by realizing an optimized write process with decrease latency and improved efficiency.

    INCREASED PRECISION ANALOG CONTENT ADDRESSABLE MEMORIES

    公开(公告)号:US20240029792A1

    公开(公告)日:2024-01-25

    申请号:US17872882

    申请日:2022-07-25

    摘要: Examples increase precision for aCAMs by converting an input signal (x) received by a circuit into a first analog voltage signal (V(xMSB)) representing the most significant bits of the input signal (x) and a second analog voltage signal (V(xLSB)) representing the least significant bits of the input signal (x). By dividing the input signal (x) bit-wise into the first analog voltage signal (V(xMSB)) and the second analog voltage signal (V(xLSB)), the circuit can utilize aCAM sub-circuits implementing a combination of Boolean operations to search the input signal (x) against 22*M programmable levels, where “M” represents the number of programmable bits for each aCAM sub-circuit. Thus, using similar circuit hardware, example circuits square the number of programmable levels of conventional aCAMs (which generally only have 2M programmable levels). Accordingly, examples provide new aCAMs that can carry out more complex computations than conventional aCAMs of comparable cost, size, and power consumption.

    ANALOG ERROR DETECTION AND CORRECTION IN ANALOG IN-MEMORY CROSSBARS

    公开(公告)号:US20230246655A1

    公开(公告)日:2023-08-03

    申请号:US17580146

    申请日:2022-01-20

    摘要: An analog error correction circuit is disclosed that implements an analog error correction code. The analog circuit includes a crossbar array of memristors or other nonvolatile tunable resistive memory devices. The crossbar array includes a first crossbar array portion programmed with values of a target computation matrix and a second crossbar array portion programmed with values of an encoder matrix for correcting computation errors in the matrix multiplication of an input vector with the computation matrix. The first and second crossbar array portions share the same row lines and are connected to a third crossbar array portion that is programmed with values of a decoder matrix, thereby enabling single-cycle error detection. A computation error is detected based on output of the decoder matrix circuitry and a location of the error is determined via an inverse matrix multiplication operation whereby the decoder matrix output is fed back to the decoder matrix.

    CAMS FOR LOW LATENCY COMPLEX DISTRIBUTION SAMPLING

    公开(公告)号:US20230197151A1

    公开(公告)日:2023-06-22

    申请号:US17555260

    申请日:2021-12-17

    IPC分类号: G11C13/00 G11C15/04 G06N7/00

    摘要: Systems and methods are provided for employing analog content addressable memory (aCAMs) to achieve low latency complex distribution sampling. For example, an aCAM core circuit can include an aCAM array. Amplitudes of a probability distribution function are mapped to a width of one or more aCAM cells in each row of the aCAM array. The aCAM core circuit can also include a resistive random access memory (RRAM) storing lookup information, such as information used for processing a model. By randomly selecting columns to search of the aCAM array, the mapped probability distribution function is sampled in a manner that has low latency. The aCAM core circuit can accelerate the sampling step in methods relying on sampling from arbitrary probability distributions, such as particle filter techniques. A hardware architecture for an aCAM Particle Filter that utilizes the aCAM core circuit as a central structure is also described.

    ANALOG CONTENT ADDRESSABLE MEMORY WITH ANALOG INPUT AND ANALOG OUTPUT

    公开(公告)号:US20220351794A1

    公开(公告)日:2022-11-03

    申请号:US17245540

    申请日:2021-04-30

    IPC分类号: G11C27/00 G11C15/04

    摘要: An analog content addressable memory (aCAM) that enables parallel searching of analog ranges of values and generates analog outputs that quantify matches between input data and stored data is disclosed. The input data can be compared with the stored data, and the input data can be determined to match the stored data based on a value associated with the input data being within a range associated with the stored data. The aCAM can generate an analog output that represents a number of matches and a number of mismatches between the input data and the stored data. Based on the analog output, whether the input data matches the stored data and a degree to which the input data matches the stored data can be determined.