公开(公告)号：US20170279042A1

公开(公告)日：2017-09-28

申请号：US15507014

申请日：2014-08-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Minxian ZHANG

IPC: H01L45/00

CPC classification number: H01L45/08 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/145 ,  H01L45/146

Abstract: A fast erasing memristor includes an active region, a resistive heater, and a dielectric sheath. The active region has a switching layer coupled between a first conducting layer and second conducting layer. The resistive heater is coupled to the active region to provide heat to the active region. The dielectric sheath separates the active region and the resistive heater.

公开(公告)号：US20170217168A1

公开(公告)日：2017-08-03

申请号：US15328277

申请日：2014-07-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Minxian Zhang

IPC: B41J2/14 ,  H01L45/00 ,  H01L27/24 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/04541 ,  B41J2/04581 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2/17546 ,  B41J2202/13 ,  B41J2202/18 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/1233

Abstract: In an example, a printhead includes a memristor, in which the memristor may include a first electrode, a second electrode positioned in a crossed relationship with the first electrode to form a junction, and a switching element positioned at the junction between the first electrode and the second electrode, in which the switching layer includes a via formed in the switching element to reduce an area of the switching element.

公开(公告)号：US20170279044A1

公开(公告)日：2017-09-28

申请号：US15512141

申请日：2014-09-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Zhiyong LI ,  Minxian ZHANG ,  Katy Samuels

IPC: H01L45/00 ,  B41J2/175

CPC classification number: H01L45/1233 ,  B41J2/1753 ,  B41J2/17546 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.

公开(公告)号：US20170203561A1

公开(公告)日：2017-07-20

申请号：US15326089

申请日：2014-07-26

Applicant: HEWLETT- PACKARD DEVELOPMENT COMPANY, L.P .

Inventor： Ning GE ,  Jianhua YANG ,  Zhiyong LI

IPC: B41J2/045

CPC classification number: B41J2/04541 ,  B41J2/0455 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2/17566 ,  B41J2002/17579 ,  B41J2202/13

Abstract: A printhead with a number of memristors and a parallel current distributor is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of memristor cells. Each memristor cell includes a memristor to store information and a multiplexing component to select a memristor. The printhead also includes and at least one current distributor connected in parallel to a number of memristor cells.

公开(公告)号：US20170229170A1

公开(公告)日：2017-08-10

申请号：US15515317

申请日：2014-10-23

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Zhiyong LI ,  R. Stanley Williams

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C7/1006 ,  G11C7/24 ,  G11C8/12 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0023 ,  G11C15/046

Abstract: A device for generating a representative logic indicator of grouped memristors is described. The device includes a memristor array. The memristor array includes a number of first memristors having a first set of logic indicators and a number of second memristors having a second set of logic indicators. The second set of logic indicators is different than the first set of logic indicators. Each first memristor is grouped with a corresponding second memristor during a memory read operation to generate a representative logic indicator.

公开(公告)号：US20160322424A1

公开(公告)日：2016-11-03

申请号：US14700972

申请日：2015-04-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Stanley WILLIAMS ,  Kyung Min KIM

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: In an example, an apparatus includes an electrically conductive component having a first side and a second side, a first switching material formed on the first side of the electrically conductive component, and a second switching material formed on the second side of the electrically conductive component. The second switching material may include a different material than the first switching material and resistance states of each of the first switching material and the second switching material are to be modified through application of electric fields through the first switching material and the second switching material. The apparatus may also include an electrode in contact with one of the first switching material and the second switching material.

Abstract translation: 在一个示例中，一种装置包括具有第一侧和第二侧的导电部件，形成在导电部件的第一侧上的第一开关材料和形成在导电部件的第二侧上的第二开关材料 。 第二开关材料可以包括与第一开关材料不同的材料，并且通过施加通过第一开关材料和第二开关材料的电场来修改第一开关材料和第二开关材料中的每一个的电阻状态。 该装置还可以包括与第一开关材料和第二开关材料中的一个接触的电极。