公开(公告)号：US20180305822A1

公开(公告)日：2018-10-25

申请号：US15565475

申请日：2015-05-06

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： CHALAM KASHYAP ,  KUAN-TING WU ,  TONY C. KANG

IPC: C23C28/00 ,  C25D5/10 ,  C25D13/22

CPC classification number: C23C28/00 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C25D5/10 ,  C25D13/02 ,  C25D13/22

Abstract: Various examples described herein provide for a substrate, or a method for preparing a substrate, including a first electroplated layer disposed over a metal substrate, a second electroplated layer disposed under the metal substrate, and an electrophoretic deposition layer disposed over the first electroplated layer.

公开(公告)号：US20180298499A1

公开(公告)日：2018-10-18

申请号：US15519697

申请日：2015-04-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： CHI HAO CHANG ,  CHALAM KASHYAP ,  KUAN-TING WU

IPC: C23C28/02 ,  B32B15/01 ,  C23C24/10 ,  C25D11/04 ,  C23F17/00

Abstract: Various examples described herein provide for a substrate, or a method for preparing a substrate, including an aluminum layer and an anodized layer over a substrate. For instance, the substrate may comprise a substrate, a continuous aluminum layer formed over the substrate, and an anodized layer formed over the continuous aluminum layer.

公开(公告)号：US20170226654A1

公开(公告)日：2017-08-10

申请号：US15501230

申请日：2014-10-27

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： CHALAM KASHYAP ,  KUAN-TING WU

IPC: C25D13/14 ,  C25D5/48 ,  C25D11/30 ,  C23C28/00 ,  C25D13/22 ,  C23C14/58 ,  C23C16/56 ,  C25D7/04 ,  C25D13/20

CPC classification number: C25D13/14 ,  C23C14/5853 ,  C23C16/56 ,  C23C28/00 ,  C25D5/42 ,  C25D5/48 ,  C25D7/00 ,  C25D7/04 ,  C25D11/30 ,  C25D13/02 ,  C25D13/12 ,  C25D13/20 ,  C25D13/22

Abstract: According to one example, preparing a substrate for an electronic device can include forming a deposition layer on a magnesium alloy substrate, anodizing the magnesium alloy substrate, and forming an electrophoretic deposition layer on the anodized magnesium alloy substrate.

公开(公告)号：US20160347044A1

公开(公告)日：2016-12-01

申请号：US14911281

申请日：2013-10-23

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： WEI JEN CHEN ,  CHALAM KASHYAP ,  KUAN-TING WU

IPC: B32B37/10 ,  B32B37/06 ,  B32B15/04 ,  B32B37/14

CPC classification number: B32B37/10 ,  B23K20/02 ,  B23K20/2333 ,  B23K2103/08 ,  B23K2103/18 ,  B32B15/01 ,  B32B15/043 ,  B32B37/00 ,  B32B37/06 ,  B32B37/14 ,  B32B2307/54 ,  B32B2311/00 ,  B32B2457/00 ,  C22C23/02

Abstract: A multi-layered metal includes a first layer, and a second layer on the first layer. The second layer is bonded to the first layer, by applying at least one of heat and pressure to an assembly including the first layer and the sheet to cause inter-metal diffusion between the first layer and the second layer.

Abstract translation: 多层金属包括第一层和第一层上的第二层。 通过对包括第一层和片材的组件施加热和压力中的至少一种来将第二层结合到第一层，以引起第一层和第二层之间的金属间扩散。