公开(公告)号：US09966225B2

公开(公告)日：2018-05-08

申请号：US15329638

申请日：2014-07-28

Applicant: HITACHI, LTD.

Inventor： Daisuke Bizen ,  Makoto Sakakibara ,  Hiroya Ohta ,  Junichi Tanaka

IPC: H01J37/24 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/244 ,  H01J37/222 ,  H01J37/24 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/226

Abstract: A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information (272) in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information (271) which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (272), the sample configuration information (271), and the emission electron number information.

公开(公告)号：US10262830B2

公开(公告)日：2019-04-16

申请号：US15529281

申请日：2014-11-26

Applicant: HITACHI, LTD.

Inventor： Daisuke Bizen ,  Hideo Morishita ,  Michio Hatano ,  Hiroya Ohta

IPC: H01J37/26 ,  H01J37/147 ,  H01J37/10 ,  H01J37/285 ,  H01J37/28 ,  H01J37/05 ,  H01J37/21 ,  H01J37/244

Abstract: To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens 105; primary electron acceleration means 104 that accelerates primary electrons 102; primary electron deceleration means 109 that decelerates the primary electrons and irradiates them to a sample 106; a secondary electron deflector 103 that deflects secondary electrons 110 from the sample to the outside of an optical axis of the primary electrons; a spectroscope 111 that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

公开(公告)号：US10825649B2

公开(公告)日：2020-11-03

申请号：US16269345

申请日：2019-02-06

Applicant: HITACHI, LTD.

Inventor： Yasunari Sohda ,  Daisuke Bizen ,  Makoto Sakakibara

IPC: H01J37/28 ,  H01J37/141 ,  H01J37/12

Abstract: The present invention provides an electron beam device suitable for observing the bottom of a deep groove or a deep hole with a high degree of accuracy under a large current condition. The electron beam device has: an electron optical system having an irradiation optical system to irradiate an aperture 153 with an electron beam 116 emitted from an electron source 100 and a reduction projection optical system to project and form an aperture image of the aperture on a sample 114; and a control unit 146 to control a projection magnification of the aperture image of the aperture projected and formed on the sample and an aperture angle 402 of the electron beam emitted to the sample by the electron optical system.

公开(公告)号：US10338367B2

公开(公告)日：2019-07-02

申请号：US15692418

申请日：2017-08-31

Applicant: HITACHI, LTD.

Inventor： Ryoko Araki ,  Hyejin Kim ,  Daisuke Bizen

IPC: G01N23/00 ,  G02B21/00 ,  G01B9/04 ,  H01J37/26 ,  H01J37/28

Abstract: A scanning microscope includes: a charged particle beam source configured to output a charged particle beam to be emitted to a sample; a detector configured to detect charged particles from the sample; and a controller configured to control the charged particle beam source and the detector, wherein the controller changes one or more variable parameters to determine a plurality of different parameter value sets, acquires a measurement result of a temporal change of absorption current in a target sample material under each of the plurality of different parameter value sets, and, based on the measurement results, selects a parameter value set for use in measurement of the target sample from the plurality of different parameter value sets.