公开(公告)号：US20180082825A1

公开(公告)日：2018-03-22

申请号：US15443488

申请日：2017-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hayato WATANABE ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  B08B7/00 ,  B08B9/46

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  B08B9/46 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

公开(公告)号：US20200227270A1

公开(公告)日：2020-07-16

申请号：US16482106

申请日：2018-10-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Takao ARASE ,  Satoshi TERAKURA ,  Hayato WATANABE ,  Masahito MORI

IPC: H01L21/311 ,  H01L21/3213

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.