公开(公告)号：US3847677A

公开(公告)日：1974-11-12

申请号：US32649373

申请日：1973-01-24

申请人： HITACHI LTD

发明人： TAKEDA T ,  NAKAZAWA Y ,  IKEDA H

IPC分类号： H01L21/00 ,  H01L21/761 ,  H01L7/54

CPC分类号： H01L21/761 ,  H01L21/00 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/151 ,  Y10S257/918

摘要： An improved process for the manufacture of a semiconductor device having a plurality of bipolar type semiconductor elements formed on a substrate and isolated from each other by diffusion layers. Each diffusion layer is formed by a diffusion layer diffused from an impurity source buried in the substrate into a semiconductor layer epitaxially grown on the substrate and another diffusion layer diffused from the surface of the epitaxially grown semiconductor layer until it is combined with the first-mentioned diffusion layer.

摘要翻译： 一种用于制造半导体器件的改进方法，该半导体器件具有形成在衬底上并通过扩散层彼此隔离的多个双极型半导体元件。 每个扩散层由扩散层形成，该扩散层从掩埋在衬底中的杂质源扩散到在衬底上外延生长的半导体层和从外延生长的半导体层的表面扩散的另一个扩散层，直到与前述 扩散层。

公开(公告)号：US3778887A

公开(公告)日：1973-12-18

申请号：US3778887D

申请日：1971-12-15

申请人： HITACHI LTD

发明人： SUZUKI J ,  TAKEDA T

IPC分类号： H01L23/495 ,  B01J17/00

CPC分类号： H01L23/49568 ,  H01L23/49541 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/49121 ,  Y10T428/12528 ,  H01L2924/00014 ,  H01L2924/20755 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/00

摘要： Manufacturing of power semiconductor devices utilizing a metal strip and a lead frame. The metal strip has a plurality of portions on which semiconductor chips are mounted, and fastening means constituted by indents at the longer sides of the strip and metal pieces protruding along the indents. The lead frame has a plurality of lead units and tab portions corresponding to the indents. The lead frame is locked over the metal strip by inserting the tab portions into the corresponding indents and bending the metal pieces toward the tab portions. After encapsulating the combinations of the lead units and the portions having the chips thereon with plastic material, respectively, the metal strip and the lead frame are cut along the portions of the tab-metal piece combinations, thereby to obtain a plurality of individual power semiconductor devices.

摘要翻译： 使用金属条和引线框的功率半导体器件的制造。 金属条具有多个安装有半导体芯片的部分，并且紧固装置由条带的长边上的凹口和沿着凹口突出的金属片构成。 引线框具有对应于凹口的多个引线单元和突片部分。 通过将突片部分插入到相应的凹口中并将金属片朝向突片部分将引线框架锁定在金属条上。 在分别用塑料材料封装引线单元和具有芯片的部分的组合之后，沿着金属片组合的部分切割金属带和引线框架，从而获得多个单独的功率半导体 设备。