公开(公告)号：US10387792B1

公开(公告)日：2019-08-20

申请号：US15638254

申请日：2017-06-29

Applicant: HRL Laboratories, LLC

Inventor： Thaddeus D. Ladd ,  Andrey A. Kiselev ,  Danny M. Kim ,  Rongming Chu

IPC: H01L29/12 ,  G06N10/00 ,  H01L29/04 ,  H01L29/205 ,  B82Y10/00

Abstract: A device for storing and/or transferring quantum data. The device has a plurality of elongate semiconductor structures arranged in side by said with each elongate semiconductor structure having a quantum well layer of one semiconductor material disposed between upper and lower layers of a different semiconductor material which share the same or essentially the same crystalline structure as that of the quantum well layer. Neighboring ones of the elongate semiconductor structures share a region forming a constriction between the neighboring ones of the elongate semiconductor structures. Also disclosed is a a method of adjusting exchange coupling between laterally coupled quantum wells in a quantum device having sidewalls, the method including: defining the sidewalls by etching a crystalline structure along lattice planes of said crystalline structure, the crystalline structure, after the sidewalls are etched, having a corrugated shaped with protuberances and grooves on opposing major surfaces thereof, and controlling a ratio of the distances (i) between opposing grooves on the opposing major surfaces of the crystalline structure and (ii) between opposing protuberances on the opposing major surfaces of the crystalline structure.

公开(公告)号：US09800018B2

公开(公告)日：2017-10-24

申请号：US15048440

申请日：2016-02-19

Applicant: HRL LABORATORIES, LLC

Inventor： Keyvan Sayyah ,  Oleg M. Efimov ,  Pamela R. Patterson ,  Andrey A. Kiselev

IPC: H01S5/06 ,  H01S5/022 ,  H01S5/024 ,  H01S5/028 ,  H01S5/042 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/125 ,  H01S5/343 ,  H01S5/40 ,  H01S3/23 ,  H01S5/00 ,  H01S5/068 ,  H01S5/50 ,  H01S5/026 ,  H01S5/22 ,  H01S5/187 ,  H01S5/20

CPC classification number: H01S5/0604 ,  H01S3/2383 ,  H01S5/0092 ,  H01S5/0228 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/06821 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1028 ,  H01S5/1064 ,  H01S5/125 ,  H01S5/187 ,  H01S5/2013 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/50 ,  H01S2301/166

Abstract: A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.