摘要:
[Problem] To provide a container for an electromagnetic cooker which can be heated corresponding to impedance check frequency which differs depending on a manufacturer of an electromagnetic cooker or the like, can properly and easily set a heat generation characteristic, is excellent in marketability, configuration in use, disposability, handiness in cooking and the like, is suitable for retort foods, instant foods and the like, and exhibits high heating efficiency.[Means for Resolution] A container for an electromagnetic cooker includes a container body made of a non-conductive material and a conductive layer in a bottom portion of the container, wherein the ratio of resistance change (R−R0)/R0 of the conductive layer with respect to the impedance check frequency of a heating coil is set to 5.3 or more, and a ratio of inductance change (L−L0)/L0 of the conductive layer with respect to the impedance check frequency of the heating coil is set to −0.17 or less. Here, R indicates the high-frequency resistance (Ω) on a heating coil side with a load, R0 indicates the high-frequency resistance (Ω) on the heating coil side without a load, L indicates the inductance (μH) on the heating coil side with a load, and L0 indicates the inductance (μH) on the heating coil side without a load.
摘要:
Problem to provide a container for an electromagnetic cooker which can be heated corresponding to impedance check frequency which differs depending on a manufacturer of an electromagnetic cooker or the like, can properly and easily set a heat generation characteristic, is excellent in marketability, configuration in use, disposability, handiness in cooking and the like, is suitable for retort foods, instant foods and the like, and exhibits high heating efficiency, means for resolution a container for an electromagnetic cooker includes a container body made of a non-conductive material and a conductive layer in a bottom portion of the container, wherein the ratio of resistance change (R−R0)/R0 of the conductive layer with respect to the impedance check frequency of a heating coil is set to 5.3 or more, and a ratio of inductance change (L−L0)/L0 of the conductive layer with respect to the impedance check frequency of the heating coil is set to −0.17 or less. Here, R indicates the high-frequency resistance (.OMEGA.) on a heating coil side with a load, R0 indicates the high-frequency resistance (.OMEGA.) on the heating coil side without a load, L indicates the inductance (.mu.H) on the heating coil side with a load, and L0 indicates the inductance (.mu.H) on the heating coil side without a load.
摘要:
To provide a light-emitting device which can emit bright light without increasing the projected area of a light-emitting element and be manufactured with high yield. A light-emitting device of one embodiment of the present invention includes a plurality of projections; a first electrode formed along the plurality of projections; a layer containing a light-emitting organic compound formed along the plurality of projections and over the first electrode; and a second electrode formed along the plurality of projections and over the layer containing a light-emitting organic compound. Further, the plurality of projections each have a bottom surface having a side in contact with a bottom surface of an adjacent projection; a plurality of side surfaces each having a certain angle greater than 0° and less than or equal to 80° with respect to the bottom surface; and a vertex having a first continuously curved surface.
摘要:
An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other.
摘要:
The present invention provides a positive electrode for a non-aqueous electrolyte secondary battery in which the charge/discharge rate of a secondary battery is increased by increasing the discharge/discharge rate of the positive electrode as a result of increasing the rate of incorporation and release of lithium ions in olivine-type phosphorous complex compound particles, a non-aqueous electrolyte secondary battery provided with this positive electrode for a non-aqueous electrolyte secondary battery, and a battery module provided with this non-aqueous electrolyte secondary battery. The positive electrode for a non-aqueous electrolyte secondary battery of the present invention is a positive electrode for a non-aqueous electrolyte secondary battery containing olivine-type lithium complex compound particles having a carbonaceous film formed on the surface thereof as a positive electrode active material, in which the coverage factor of the carbonaceous film relative to the surface area of the olivine-type lithium complex compound particles is preferably 95% or more, and the packed density of the olivine-type lithium complex compound particles in this positive electrode for a non-aqueous electrolyte secondary battery is preferably 0.90 g/cm3 to 1.09 g/cm3.
摘要翻译:本发明提供一种非水电解质二次电池用正极,其特征在于,通过增加所述正极的放电/放电率,通过增加所述正极的放电/放电率来提高二次电池的充放电率 的橄榄石型磷配位化合物粒子中的锂离子,设置有该非水电解质二次电池用正极的非水电解质二次电池以及具备该非水电解质二次电池的电池模块。 本发明的非水电解质二次电池用正极是含有在表面形成有碳膜作为正极活性物质的橄榄石型锂络合物粒子的非水电解质二次电池用正极 ,其中碳质膜相对于橄榄石型锂络合物颗粒的表面积的覆盖系数优选为95%以上,在该正极中的橄榄石型锂络合物粒子的填充密度为 非水电解质二次电池优选为0.90g / cm 3至1.09g / cm 3。
摘要:
A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.
摘要:
A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.
摘要:
An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.
摘要:
A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation. By the above order of steps, it becomes possible to obtain a thin film semiconductor device which has small numbers of crystals and less variance of grain size of crystals for each unit of electric circuit, compared with a device produced by the conventional process. Further, the process makes it possible to be even the boundary surface between the crystallized layer and the insulation layer in a device.
摘要:
There is disclosed a small-sized, active matrix liquid crystal display having high reliability. The liquid crystal display comprises a TFT substrate, a counter substrate, and a layer of a liquid crystal material held between these two substrates. A plurality of pixel TFTs are arranged in rows and columns on the TFT substrate. Driver TFTs forming a driver circuit for driving the pixel TFTs are formed also on the TFT substrate. All of these TFTs are covered by the liquid crystal material directly or via a thin film to protect these TFTs. A short ring is cut after a rubbing operation and before bonding of the substrates. Therefore, during manufacturing, the TFTs are protected from static charges. Also, the cutting operation is facilitated.