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    Immersion liquids with siloxane polymer for immersion lithography
    1.
    发明授权
    Immersion liquids with siloxane polymer for immersion lithography 有权
    浸渍液与硅氧烷聚合物浸渍光刻

    公开(公告)号：US07391501B2

    公开(公告)日：2008-06-24

    申请号：US10763467

    申请日：2004-01-22

    申请人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert M. Meagley ,  Ernisse Putna

    发明人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert M. Meagley ,  Ernisse Putna

    IPC分类号： G03B27/54

    CPC分类号： G03F7/2041 ,  G03F7/70341

    摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

    摘要翻译： 用于浸没液体材料和相关浸没光刻系统和技术的组合物。 与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。 此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

    Immersion liquids for immersion lithography
    2.
    发明申请
    Immersion liquids for immersion lithography 有权
    用于浸没式光刻的浸液

    公开(公告)号：US20050164502A1

    公开(公告)日：2005-07-28

    申请号：US10763467

    申请日：2004-01-22

    申请人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert Meagley ,  Ernisse Putna

    发明人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert Meagley ,  Ernisse Putna

    IPC分类号： G03F7/20 ,  H01L21/302 ,  H01L21/461

    CPC分类号： G03F7/2041 ,  G03F7/70341

    摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

    摘要翻译： 用于浸没液体材料和相关浸没光刻系统和技术的组合物。 与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。 此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

    Methods and compositions for reducing line wide roughness
    4.
    发明授权
    Methods and compositions for reducing line wide roughness 有权
    减少线宽粗糙度的方法和组合物

    公开(公告)号：US07867687B2

    公开(公告)日：2011-01-11

    申请号：US10687288

    申请日：2003-10-15

    申请人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    发明人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    IPC分类号： G03F7/004

    CPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/0233

    摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

    摘要翻译： 本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。 根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。 对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。 在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。 曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。 对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。

    Methods and compositions for reducing line wide roughness
    5.
    发明申请
    Methods and compositions for reducing line wide roughness 有权
    减少线宽粗糙度的方法和组合物

    公开(公告)号：US20050084793A1

    公开(公告)日：2005-04-21

    申请号：US10687288

    申请日：2003-10-15

    申请人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    发明人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023

    CPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/0233

    摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

    摘要翻译： 本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。 根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。 对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。 在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。 曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。 对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。

    Offline screening of outgas emissions in semiconductor processing
    6.
    发明申请
    Offline screening of outgas emissions in semiconductor processing 有权
    在半导体加工过程中对脱气排放的离线筛选

    公开(公告)号：US20060223202A1

    公开(公告)日：2006-10-05

    申请号：US11097867

    申请日：2005-03-31

    申请人： Hok-Kin Choi ,  Vani Thirumala

    发明人： Hok-Kin Choi ,  Vani Thirumala

    IPC分类号： H01L21/66 ,  B01D53/02

    CPC分类号： H01L21/67253

    摘要： The present description relates to measuring outgas emissions in fabrication chambers used for semiconductors, micromachines and the like. In one embodiment, the invention includes inserting a gas adsorption material into a processing chamber exhaust vent, running a process in the chamber, venting gasses in the chamber through the gas adsorption material, removing the adsorption material from the exhaust vent, and analyzing the adsorption material for gases.

    摘要翻译： 本说明书涉及测量用于半导体，微机械等的制造室中的废气排放。 在一个实施方案中，本发明包括将气体吸附材料插入处理室排气口，运行室中的过程，通过气体吸附材料排出室中的气体，从排气口移除吸附材料，并分析吸附 气体材料

    Analyzing samples having diverse analytes in presence of salt using chromatography and evaporative light scattering detection
    10.
    发明申请
    Analyzing samples having diverse analytes in presence of salt using chromatography and evaporative light scattering detection 审中-公开
    使用色谱和蒸发光散射检测分析盐存在下具有不同分析物的样品

    公开(公告)号：US20080179184A1

    公开(公告)日：2008-07-31

    申请号：US11698714

    申请日：2007-01-25

    申请人： Hok-Kin Choi ,  Yongmei Wu ,  Vani Thirumala

    发明人： Hok-Kin Choi ,  Yongmei Wu ,  Vani Thirumala

    IPC分类号： C25B9/00 ,  G01N30/84

    CPC分类号： G01N30/74 ,  G01N2030/8429 ,  G01N2030/847 ,  G01N21/47

    摘要： Methods of chemical analysis are disclosed. In one aspect, a method may include introducing a sample into a chromatograph. The sample may include a multiple analytes having diverse sizes and chemical properties. The analytes may be present in solution with a salt. The salt may have a concentration that is higher than that of each of the analytes. The analytes and the salt may be separated with the chromatograph. The separated analytes may be introduced into an evaporative light scattering detector (ELSD). The amounts of each of the analytes in the sample may be determined with the ELSD. Other methods, including methods of analyzing plating solutions and adjusting the plating solutions based on the analysis are also disclosed, as are systems to perform such analysis and systems to adjust the concentrations of plating solutions.

    摘要翻译： 披露了化学分析方法。 一方面，方法可以包括将样品引入色谱仪。 样品可以包括具有不同尺寸和化学性质的多种分析物。 分析物可能与盐一起存在于溶液中。 盐的浓度可能高于每种分析物的浓度。 分析物和盐可以用色谱仪分离。 分离的分析物可以被引入蒸发光散射检测器（ELSD）。 样品中每种分析物的量可以用ELSD测定。 还公开了其他方法，包括分析电镀溶液的方法和基于分析调整电镀溶液的方法，以及进行这种分析的系统和调整电镀溶液浓度的系统。