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    Immersion liquids for immersion lithography
    1.
    发明申请
    Immersion liquids for immersion lithography 有权
    用于浸没式光刻的浸液

    公开(公告)号：US20050164502A1

    公开(公告)日：2005-07-28

    申请号：US10763467

    申请日：2004-01-22

    申请人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert Meagley ,  Ernisse Putna

    发明人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert Meagley ,  Ernisse Putna

    IPC分类号： G03F7/20 ,  H01L21/302 ,  H01L21/461

    CPC分类号： G03F7/2041 ,  G03F7/70341

    摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

    摘要翻译： 用于浸没液体材料和相关浸没光刻系统和技术的组合物。 与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。 此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

    Immersion liquids with siloxane polymer for immersion lithography
    2.
    发明授权
    Immersion liquids with siloxane polymer for immersion lithography 有权
    浸渍液与硅氧烷聚合物浸渍光刻

    公开(公告)号：US07391501B2

    公开(公告)日：2008-06-24

    申请号：US10763467

    申请日：2004-01-22

    申请人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert M. Meagley ,  Ernisse Putna

    发明人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert M. Meagley ,  Ernisse Putna

    IPC分类号： G03B27/54

    CPC分类号： G03F7/2041 ,  G03F7/70341

    摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

    摘要翻译： 用于浸没液体材料和相关浸没光刻系统和技术的组合物。 与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。 此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

    Methods and compositions for reducing line wide roughness
    3.
    发明授权
    Methods and compositions for reducing line wide roughness 有权
    减少线宽粗糙度的方法和组合物

    公开(公告)号：US07867687B2

    公开(公告)日：2011-01-11

    申请号：US10687288

    申请日：2003-10-15

    申请人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    发明人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    IPC分类号： G03F7/004

    CPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/0233

    摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

    摘要翻译： 本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。 根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。 对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。 在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。 曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。 对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。

    Methods and compositions for reducing line wide roughness
    5.
    发明申请
    Methods and compositions for reducing line wide roughness 有权
    减少线宽粗糙度的方法和组合物

    公开(公告)号：US20050084793A1

    公开(公告)日：2005-04-21

    申请号：US10687288

    申请日：2003-10-15

    申请人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    发明人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023

    CPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/0233

    摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

    摘要翻译： 本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。 根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。 对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。 在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。 曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。 对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。

    Zeolite-carbon doped oxide composite low k dielectric
    8.
    发明授权
    Zeolite-carbon doped oxide composite low k dielectric 有权
    沸石 - 碳掺杂氧化物复合低k电介质

    公开(公告)号：US07303985B2

    公开(公告)日：2007-12-04

    申请号：US10716250

    申请日：2003-11-17

    申请人： Hai Deng ,  Huey-Chiang Liou

    发明人： Hai Deng ,  Huey-Chiang Liou

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31695 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/24331 ,  H01L2924/00

    摘要： A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.

    摘要翻译： 本文描述了形成沸石 - 碳掺杂氧化物（CDO）复合电介质材料的方法。 沸石颗粒可以分散在溶剂中。 然后可以将沸石溶剂溶液沉积在下层，例如其它介电层的晶片上。 然后可以除去至少一些溶剂以形成沸石膜。 然后可以将CDO沉积在沸石膜中以形成沸石-CDO复合膜/电介质。 然后可以将沸石-CDO复合膜/电介质煅烧以形成固相沸石-CDO复合材料。

    ZEOLITE - CARBON DOPED OXIDE COMPOSITE LOW K DIELECTRIC
    9.
    发明申请
    ZEOLITE - CARBON DOPED OXIDE COMPOSITE LOW K DIELECTRIC 审中-公开
    ZEOLITE - 碳氧化物复合材料低K电介质

    公开(公告)号：US20080220213A1

    公开(公告)日：2008-09-11

    申请号：US11924865

    申请日：2007-10-26

    申请人： Hai Deng ,  Huey-Chiang Liou

    发明人： Hai Deng ,  Huey-Chiang Liou

    IPC分类号： B32B3/10

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31695 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/24331 ,  H01L2924/00

    摘要： A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer or other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The Zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dielectric.

    摘要翻译： 本文描述了形成沸石 - 碳掺杂氧化物（CDO）复合电介质材料的方法。 沸石颗粒可以分散在溶剂中。 然后可以将沸石溶剂溶液沉积在下面的层上，例如晶片或其它电介质层。 然后可以除去至少一些溶剂以形成沸石膜。 然后可以将CDO沉积在沸石膜中以形成沸石-CDO复合膜/电介质。 然后可以将沸石-CDO复合膜/电介质煅烧以形成固相沸石-CDO复合电介质。

    Zeolite-carbon doped oxide composite low k dielectric
    10.
    发明申请
    Zeolite-carbon doped oxide composite low k dielectric 有权
    沸石 - 碳掺杂氧化物复合低k电介质

    公开(公告)号：US20050107242A1

    公开(公告)日：2005-05-19

    申请号：US10716250

    申请日：2003-11-17

    申请人： Hai Deng ,  Huey-Chiang Liou

    发明人： Hai Deng ,  Huey-Chiang Liou

    IPC分类号： H01L21/316 ,  H01L23/532 ,  B01J20/28

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31695 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/24331 ,  H01L2924/00

    摘要： A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.

    摘要翻译： 本文描述了形成沸石 - 碳掺杂氧化物（CDO）复合电介质材料的方法。 沸石颗粒可以分散在溶剂中。 然后可以将沸石溶剂溶液沉积在下层，例如其它介电层的晶片上。 然后可以除去至少一些溶剂以形成沸石膜。 然后可以将CDO沉积在沸石膜中以形成沸石-CDO复合膜/电介质。 然后可以将沸石-CDO复合膜/电介质煅烧以形成固相沸石-CDO复合材料。