公开(公告)号：US4909790A

公开(公告)日：1990-03-20

申请号：US200987

申请日：1988-06-01

申请人： Hajime Tsujikawa ,  Toshiki Yoshida

发明人： Hajime Tsujikawa ,  Toshiki Yoshida

IPC分类号： A61M5/152

CPC分类号： A61M5/152

摘要： A liquid infusion device comprises a bladder assembly and a flow-regulating portion. The bladder assembly comprises a tubular outer shaft, an inner shaft slidably received within the outer shaft and a bladder covering the outer and inner shafts. The bladder can inflate in both its radial and axial directions whereby reducing the residual amounts of a liquid drug in the bladder on dispensation of the liquid drug. The flow-regulating portion comprises a pipe having at least one small hole or a pipe having a very small diameter, so that the accurate regulation of the liquid drug can be performed.

公开(公告)号：US5065223A

公开(公告)日：1991-11-12

申请号：US531457

申请日：1990-05-31

申请人： Hirohisa Matsuki ,  Shigeki Harada ,  Masahiro Sugimoto ,  Toshiki Yoshida

发明人： Hirohisa Matsuki ,  Shigeki Harada ,  Masahiro Sugimoto ,  Toshiki Yoshida

IPC分类号： H01L23/055 ,  H01L23/367 ,  H01L23/498

CPC分类号： H01L23/3675 ,  H01L23/055 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2924/0002 ,  H01L2924/01079

摘要： A semiconductor device includes a semiconductor chip, a substrate for supporting the semiconductor chip, a plurality of terminals provided on the substrate for external connections, a plurality of lead wires provided on the semiconductor chip for connections to the terminals, and a multilevel interconnection structure for connecting the plurality of terminals to the plurality of lead wires on the semiconductor chip. The multilevel interconnection structure includes at least a lower conductor layer provided on the substrate and patterned into a plurality of pattern portions connected electrically to the terminals, an insulator layer provided on the lower conductor layer, and an upper conductor layer provided above the insulator layer. The upper conductor layer is formed with a connection area immediately below the lead wires on the semiconductor chip when the semiconductor chip is mounted on the substrate, the upper conductor layer is patterned in the connection area into a plurality of conductor strips extending parallel with each other in correspondence to the lead wires, the insulator layer is provided with contact holes so as to connect electrically the conductor strips of the upper conductor layer with the pattern portions of the lower conductor layer. In the semiconductor device, each of the pattern portions in the connection area has an edge extending obliquely to the conductor strips of the upper conductor layer wherein the pattern portions are disposed so that a pair of adjacent pattern portions have respective edges opposing with each other and extending parallel with each other with a lateral gap extending therebetween.

公开(公告)号：US6126713A

公开(公告)日：2000-10-03

申请号：US956788

申请日：1997-10-23

申请人： Yoshio Igarashi ,  Hideharu Nakano ,  Kenya Matsuyama ,  Masahiro Takahashi ,  Senri Okada ,  Masahide Kawabata ,  Katsuhiko Kojo ,  Toshiki Yoshida

发明人： Yoshio Igarashi ,  Hideharu Nakano ,  Kenya Matsuyama ,  Masahiro Takahashi ,  Senri Okada ,  Masahide Kawabata ,  Katsuhiko Kojo ,  Toshiki Yoshida

IPC分类号： C21C1/10 ,  C22C37/04

CPC分类号： C22C37/04 ,  C21C1/105

摘要： An additive for use in producing spheroidal graphite cast iron of the present invention contains a fine particle of magnesium oxide having a purity of 90 weight % or more and at least one selected from the group consisting of a graphite-spheroidizing material, an inoculant and a graphite-spheroidizing inoculant. The fine particle of highly pure magnesium oxide increases the number of nuclei in a melt, and as a result thereof, increases the graphite spheroid count of a spheroidal graphite cast iron being produced. Another additive for use in producing spheroidal graphite cast iron of the present invention contains at least one selected from the group consisting of a graphite-spheroidizing material, an inoculant and a graphite-spheroidizing inoculant, and an oxide of a metal which has, at a temperature of a melt at a time when subjected to a graphite-spheroidizing treatment, an affinity for oxygen smaller than that of a graphite-spheroidizing element being used in the graphite-spheroidizing treatment. By adding to the melt the metal oxide which oxidizes the graphite-spheroidizing element in the melt to an oxide thereof, a great number of fine oxide particles of the graphite-spheroidizing element is dispersed in the melt to provide a spheroidal graphite cast iron having a great number of fine graphite spheroids and a small chill area ratio.

摘要翻译： 本发明的球墨铸铁用添加剂含有纯度为90重量％以上的氧化镁微粒子和选自石墨球化材料，孕育剂和 石墨球化孕育剂。 高纯度氧化镁的微粒增加了熔体中的核的数量，其结果是增加了所生产的球墨铸铁的石墨球体数。 本发明的球状石墨铸铁用的另一种添加剂含有选自由石墨球化材料，孕育剂和石墨球化孕育剂组成的组中的至少一种和金属氧化物， 在进行石墨球化处理时熔融物的温度比石墨球化处理中使用的氧化石墨球化元素的亲和力小。 通过向熔体中加入将熔体中的石墨球化元素氧化成其氧化物的金属氧化物，将许多石墨球化元素的细小氧化物颗粒分散在熔体中，以提供一种球状石墨铸铁，其具有 大量细石墨球体和小的冷却面积比。

公开(公告)号：US5346561A

公开(公告)日：1994-09-13

申请号：US22623

申请日：1993-02-25

申请人： Fumio Obata ,  Hisashi Yasuda ,  Hideaki Nagayoshi ,  Kiyoshi Suehara ,  Kouhei Imanishi ,  Toshiki Yoshida

发明人： Fumio Obata ,  Hisashi Yasuda ,  Hideaki Nagayoshi ,  Kiyoshi Suehara ,  Kouhei Imanishi ,  Toshiki Yoshida

IPC分类号： C21D5/00 ,  C22C37/04

CPC分类号： C21D5/00 ,  C22C37/04 ,  C21D2211/005 ,  C21D2211/006 ,  Y10S148/902

摘要： The spheroidal graphite cast iron member having a surface layer portion mostly composed of a ferrite phase and having a thickness of at least 1 mm, and an inner portion composed of a pearlite phase and a ferrite phase, the surface layer portion having a ferritization ratio of 70% or more which is larger than that of the inner portion by at least about 15% is produced by (a) pouring a spheroidal graphite cast melt into a casting mold; (b) removing the casting mold by shake-out after the completion of solidification of the melt, while substantially the entire portion of the resulting cast iron product is still at a temperature of its A.sub.1 transformation point or higher; (c) when the temperature difference between the surface layer portion and the inner portion has become 40.degree.-60.degree. C., introducing the cast iron product into a uniform-temperature furnace kept at 750.degree.-900.degree. C., where the cast iron product is held for such a time period as to produce the surface layer portion having a ferritization ratio of 70% or more which is larger than that of the inner portion by at least about 15%; and (d) transferring the cast iron product into a cooling furnace to cool the cast iron product at a cooling speed of 15.degree.-100.degree. C./min.

摘要翻译： 所述球墨铸铁构件具有主要由铁素体相组成且厚度为至少1mm的表层部分和由珠光体相和铁素体相组成的内部，所述表层部分具有铁素体相的铁素体相， 通过（a）将球状石墨铸造熔体注入铸模中来制造比内部部分大至少约15％的70％或更多的70％ （b）在熔融物凝固完成之后通过摇晃除去铸模，同时基本上所得铸铁产品的整个部分仍处于其A1相变点或更高的温度; （c）当表面层与内部之间的温差变为40°-60°C时，将铸铁产品引入保持在750°-900℃的均匀炉中，铸件 铁产品保持这样一段时间，以便产生具有比内部部分大的铁素体比70％或更多的表层部分至少约15％的表面层部分; 和（d）将铸铁产品转移到冷却炉中，以15℃-100℃/ min的冷却速度冷却铸铁产品。

公开(公告)号：US5591023A

公开(公告)日：1997-01-07

申请号：US541966

申请日：1995-10-10

申请人： Hideki Nakamura ,  Keiji Yamasaki ,  Fujio Yamane ,  Toshiki Yoshida ,  Tadashi Iizuka ,  Akihiko Ishiyama

发明人： Hideki Nakamura ,  Keiji Yamasaki ,  Fujio Yamane ,  Toshiki Yoshida ,  Tadashi Iizuka ,  Akihiko Ishiyama

IPC分类号： F01C21/08 ,  F01C21/00

CPC分类号： F01C21/08

摘要： A compressor comprising a roller made of a cast iron which has a hardness of HRC 50 or more after heat treatment, and contains not less than 5 area % of graphite, and not less than 2 area % of crystallized eutectic structure including iron phosphide, and either a vane made of a material which has a hardness of HRC 70 or more after heat treatment and contains not less than 25 area % of undissolved carbides and nitride particles in total, the undissolved carbides including not less than 10 area % of MC type carbides, the nitride particles including at least one of TiN and NbN of not less than 5 area %, the undissolved carbides and the nitride particles having a mean grain size of not more than 5 .mu.m, or a vane made of a material including at least one of TiN and NbN particles of not less than 5 area %, the TiN and NbN particles having a mean grain size of not more than 5 .mu.m, the material essentially consisting of, by weight, 2.0 to 4.0 % of C, not more than 2.0 % of Si, not more than 1.5 % of Mn, 2.5 to 8.0 % of Cr, 20 to 40 % of W+2Mo, 3.0 to 15 % of V, not more than 15 % of Co, and the balance of Fe, the material having a hardness of HRC 65 or more after heat treatment.

摘要翻译： 一种压缩机，其特征在于，包括由铸铁制成的辊，其在热处理后硬度为HRC 50以上，并且含有不小于5面积％的石墨，不小于2面积％的包含磷化铁的结晶共晶结构， 由热处理后的硬度HRC为70以上的材料构成的叶片，总共包含不少于25面积％的未溶解的碳化物和氮化物颗粒的未被溶解的碳化物，不小于10％面积％的MC型碳化物 包括不小于5面积％的TiN和NbN中的至少一种的氮化物颗粒，未溶解的碳化物和平均粒径不大于5μm的氮化物颗粒，或由至少包括至少 不小于5面积％的TiN和NbN颗粒中的一种，TiN和NbN颗粒的平均粒径不大于5μm，该材料基本上由2.0％至4.0％的C组成，不超过 超过2.0％的Si，不超过 1.5％的Mn，2.5〜8.0％的Cr，20〜40％的W + 2Mo，3.0〜15％的V，不超过15％的Co，余量为Fe，硬度为HRC65的材料 以上。

公开(公告)号：US5406095A

公开(公告)日：1995-04-11

申请号：US112669

申请日：1993-08-26

申请人： Yoshihisa Koyama ,  Taku Katayama ,  Katsuhiko Morita ,  Masashi Yoshimura ,  Toshiki Yoshida ,  Manabu Endo

发明人： Yoshihisa Koyama ,  Taku Katayama ,  Katsuhiko Morita ,  Masashi Yoshimura ,  Toshiki Yoshida ,  Manabu Endo

IPC分类号： H01L27/15 ,  H01L33/00

CPC分类号： H01L27/153

摘要： An LED (light emitting diode) array of the present invention has a plurality of light emitting diodes aligned in row on a substrate crystal. Each of the light emitting diodes has a double hetero-structure formed by causing a light emitting layer to be interposed between p-type and n-type semi-conductive layers and is isolated with isolating mesa grooves. A reflecting layer is provided between the substrate crystal and one of the p-type and n-type semi-conductive layers. The reflecting layer comprises a plurality of semi-conductive layers having at least different refractive indexes of 2 or more than 2-kinds, each of the semi-conductive layers made of semiconductor having the same polarity as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer. Further, the isolating mesa grooves are provided by a wet etching using an etching liquid of H.sub.3 PO.sub.4 .multidot.H.sub.2 O.sub.2 having volume ratio of H.sub.3 PO.sub.4 : H.sub.2 O.sub.2 =1.about.5:1, thus, the LED array having a high integration and a high light emitting output can be successfully produced.

摘要翻译： 本发明的LED（发光二极管）阵列具有在衬底晶体上排成行的多个发光二极管。 每个发光二极管具有通过使发光层插入在p型和n型半导体层之间而形成的双异质结构，并且通过隔离台面凹槽隔离。 在衬底晶体和p型和n型半导体层中的一个之间提供反射层。 反射层包括多个半导体层，其折射率至少为2种以上，2种以上，半导体层由与半导体基板晶体相同极性的半导体层构成， 禁带宽度比发光层宽。 此外，通过使用体积比为H 3 PO 4 :H 2 O 2 = 1的DIFFERENCE 5:1的H 3 PO 4·H 2 O 2的蚀刻液的湿式蚀刻来提供隔离台面凹槽，因此可以成功地具有高积分和高发光输出的LED阵列 生产。

公开(公告)号：US5061253A

公开(公告)日：1991-10-29

申请号：US429233

申请日：1989-10-24

申请人： Toshiki Yoshida

发明人： Toshiki Yoshida

IPC分类号： A61M39/00 ,  A61M39/26

CPC分类号： A61M39/26

摘要： A fluid-communicating device with valve function comprising a tubular body having an inlet and an outlet, and a blocking body inserted in the tubular body is disclosed. The blocking body comprises a plug portion, and a supporting portion on which a diameter-enlarging portion for enlarging an inner wall of the tubular body is provided. The plug portion of the blocking body is placed in a seal portion of the tubular body to close the tubular body and to prevent the passage of fluid. In use, a tip of a syringe and the like is inserted into the tubular body, so that there is formed a clearance between the outer wall of the plug portion and the inner wall of the seal portion. Fluid passes through the clearance and a fluid passage formed longitudinally on the supporting portion or on an inner wall of the tubular body.

公开(公告)号：US20060018655A1

公开(公告)日：2006-01-26

申请号：US11178398

申请日：2005-07-12

申请人： Toshiki Yoshida

发明人： Toshiki Yoshida

IPC分类号： G03D5/00

CPC分类号： H04N1/00132 ,  H04N1/00137 ,  H04N1/00148 ,  H04N1/00161 ,  H04N1/00167 ,  H04N1/00177 ,  H04N1/00188 ,  H04N2201/3215

摘要： The photo processing apparatus of the present invention, connected to a terminal via a network, includes: a data storage section for storing data; an order storage section for storing an order specifying data to be printed among data stored in the data storage section; a printing section for printing data specified in an order stored in the order storage section on printing paper; and a control section for receiving a printing instruction specifying data to be printed from the terminal via the network and controlling storing of the received printing instruction in the order storage section as an order.

摘要翻译： 经由网络连接到终端的本发明的照相处理装置包括：数据存储部分，用于存储数据; 订单存储部分，用于在存储在数据存储部分中的数据之间存储要打印的订单指定数据; 打印部，用于将存储在订单存储部中的订单指定的数据打印在打印纸上; 以及控制部分，用于经由网络从终端接收指定要打印的数据的打印指令，并且以订​​单形式将所接收的打印指令存储在订单存储部分中。

公开(公告)号：US5310702A

公开(公告)日：1994-05-10

申请号：US856094

申请日：1992-03-20

申请人： Toshiki Yoshida ,  Ryuichi Kyomasu ,  Toshihiro Satoh

发明人： Toshiki Yoshida ,  Ryuichi Kyomasu ,  Toshihiro Satoh

IPC分类号： H01L21/60 ,  H01L23/49 ,  H01L21/56

CPC分类号： H01L24/85 ,  H01L24/48 ,  H01L24/78 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/78 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  Y10T29/49121

摘要： A method of preventing the interconnecting fine wires of a bonded semiconductor devices from moving from their preferred loop position after being bonded in an automatic wire bonder includes the step of automatically transferring the bonded semiconductor device to an insulating station prior to other operations. The interconnecting fine wires are coated in a manner which does not disturb or short the interconnecting wire which are pre-cured or cured before being transferred to a storage rack, or directly to a follow-on process step of a continuous production line.

摘要翻译： 一种防止接合的半导体器件的互连细线在自动焊线机中被接合之后从其优选的环路位置移动的方法包括在其它操作之前自动将接合的半导体器件传送到绝缘站的步骤。 相互连接的细线以不会干扰或短路互连线的方式被涂覆，这些互连线在被转移到存储架之前被预固化或固化，或者直接连接到连续生产线的后续工艺步骤。

公开(公告)号：US5084744A

公开(公告)日：1992-01-28

申请号：US169036

申请日：1988-03-16

申请人： Yoshihiro Hori ,  Keiichiro Doi ,  Manabu Endo ,  Toshiki Yoshida

发明人： Yoshihiro Hori ,  Keiichiro Doi ,  Manabu Endo ,  Toshiki Yoshida

IPC分类号： H01L21/337 ,  H01L29/808

CPC分类号： H01L29/808

摘要： In a field effect transistor (JFET) having a compound semiconducting substrate, a buffer layer having a guard-ring, an active layer, source regions, drain regions, and gate regions, the guard-ring is separated from the active layer whereby gate junction capacitance and gate leakage current are lowered without raising a gate resistance value. As a result, noise characteristics and high frequency characteristics can be improved.

摘要翻译： 在具有化合物半导体衬底的场效应晶体管（JFET）中，具有保护环，有源层，源极区，漏极区和栅极区的缓冲层，保护环与有源层分离，由此栅极结 电容和栅极漏电流降低而不增加栅极电阻值。 结果，可以提高噪声特性和高频特性。