摘要:
A semiconductor device includes a semiconductor chip, a substrate for supporting the semiconductor chip, a plurality of terminals provided on the substrate for external connections, a plurality of lead wires provided on the semiconductor chip for connections to the terminals, and a multilevel interconnection structure for connecting the plurality of terminals to the plurality of lead wires on the semiconductor chip. The multilevel interconnection structure includes at least a lower conductor layer provided on the substrate and patterned into a plurality of pattern portions connected electrically to the terminals, an insulator layer provided on the lower conductor layer, and an upper conductor layer provided above the insulator layer. The upper conductor layer is formed with a connection area immediately below the lead wires on the semiconductor chip when the semiconductor chip is mounted on the substrate, the upper conductor layer is patterned in the connection area into a plurality of conductor strips extending parallel with each other in correspondence to the lead wires, the insulator layer is provided with contact holes so as to connect electrically the conductor strips of the upper conductor layer with the pattern portions of the lower conductor layer. In the semiconductor device, each of the pattern portions in the connection area has an edge extending obliquely to the conductor strips of the upper conductor layer wherein the pattern portions are disposed so that a pair of adjacent pattern portions have respective edges opposing with each other and extending parallel with each other with a lateral gap extending therebetween.
摘要:
A metallization layer structure includes an intermediate layer formed on an aluminum nitride ceramics base. The intermediate layer contains aluminum titanium nitride. A titanium layer is formed on the intermediate layer. A heat-resistant metallic layer is formed on the titanium layer. A metallic layer for facilitating soldering or brazing is formed on the heat-resistant metallic layer.
摘要:
A semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a cap having an opening smaller than the external size of the semiconductor element for covering the semiconductor element to provide a hermetic seal, and a heatsink member mounted on the cap to cover the opening and to make contact with the semiconductor element via the opening, so that heat generated by the semiconductor element is conducted directly to the heatsink member. A method of producing the semiconductor device comprises the steps of mounting the semiconductor element on the substrate, covering the semiconductor element by the cap which is fixed to the substrate, and mounting the heatsink member on the cap to cover the opening and to make contact with the semiconductor element via the opening.
摘要:
A metallization layer structure containing, in order, an aluminum nitride ceramic base layer, an aluminum titanium nitride layer, a titanium layer, a heat-resistant metallic layer and a metallic layer for facilitating soldering and brazing. The aluminum titanium nitride layer is formed at the interface between the aluminum nitride ceramic base layer and the titanium layer by subjecting a laminate containing, in order, an aluminum nitride ceramic base layer, a titanium layer, a heat-resistant metallic layer and a metallic layer for facilitating soldering and brazing to a heat treatment within the range of 350.degree.-1000.degree. C. for 40 minutes.
摘要:
A ceramic package type semiconductor device comprising: a ceramic substrate having a wiring pattern layer formed on a top surface thereof; at least one semiconductor element mounted on the ceramic substrate with a top face thereof facing downward and electrically connected to the wiring patttern layer; a metal cap having at least one through-hole corresponding to an external size of the semiconductor element and an end portion thereof soldered to the top surface of the ceramic substrate, so that a top surface of the metal cap and a bottom surface of the semiconductor element fitting into the through-hole form a flat plane: and a heatsink member comprising a plate portion which is soldered to the flat plane of the metal cap and the semiconductor element to complete a hermetic sealing of the semiconductor element.
摘要:
A ceramic package type semiconductor device comprising: a ceramic substrate having a wiring pattern layer formed on a top surface thereof; at least one semiconductor element mounted on the ceramic substrate with a top face thereof facing downward and electrically connected to the wiring pattern layer; a metal cap having at least one through-hole corresponding to an external size of the semiconductor element and an end portion thereof soldered to the top surface of the ceramic substrate, so that a top surface of the metal cap and a bottom surface of the semiconductor element fitting into the through-hole form a flat plane: and a heatsink member comprising a plate portion which is soldered to the flat plane of the metal cap and the semiconductor element to complete a hermetic sealing of the semiconductor element.
摘要:
A semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a cap having an opening smaller than the external size of the semiconductor element for covering the semiconductor element to provide a hermetic seal, and a heatsink member mounted on the cap to cover the opening and to make contact with the semiconductor element via the opening, so that heat generated by the semiconductor element is conducted directly to the heatsink member. A method of producing the semiconductor device comprises the steps of mounting the semiconductor element on the substrate, covering the semiconductor element by the cap which is fixed to the substrate, and mounting the heatsink member on the cap to cover the opening and to make contact with the semiconductor element via the opening.
摘要:
A first DC/DC converter is connected to a higher-voltage output terminal of a rectifier by alternator wiring, a battery that supplies electric power to an on-board load is connected to the first DC/DC converter, a second DC/DC converter is connected to the higher-voltage output terminal of the rectifier by alternator wiring, and an electrical double-layer capacitor is connected to the second DC/DC converter.
摘要:
A first DC/DC converter is connected to a higher-voltage output terminal of a rectifier by alternator wiring, a battery that supplies electric power to an on-board load is connected to the first DC/DC converter, a second DC/DC converter is connected to the higher-voltage output terminal of the rectifier by alternator wiring, and an electrical double-layer capacitor is connected to the second DC/DC converter.
摘要:
A lamp lighting apparatus includes an arc spot movement detector (5) for monitoring an DC voltage Vb which is the bus voltage of an inverter (3), and for detecting a movement of an arc spot which appears before a lamp 1 enters a state where human beings can recognize a flicker of the lamp (1), and, when the arc spot movement detector (5) detects a movement of the arc spot, controls a switch (2a) of a DCDC converter (2) so as to suppress the movement of the arc spot.