公开(公告)号：US5065223A

公开(公告)日：1991-11-12

申请号：US531457

申请日：1990-05-31

申请人： Hirohisa Matsuki ,  Shigeki Harada ,  Masahiro Sugimoto ,  Toshiki Yoshida

发明人： Hirohisa Matsuki ,  Shigeki Harada ,  Masahiro Sugimoto ,  Toshiki Yoshida

IPC分类号： H01L23/055 ,  H01L23/367 ,  H01L23/498

CPC分类号： H01L23/3675 ,  H01L23/055 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2924/0002 ,  H01L2924/01079

摘要： A semiconductor device includes a semiconductor chip, a substrate for supporting the semiconductor chip, a plurality of terminals provided on the substrate for external connections, a plurality of lead wires provided on the semiconductor chip for connections to the terminals, and a multilevel interconnection structure for connecting the plurality of terminals to the plurality of lead wires on the semiconductor chip. The multilevel interconnection structure includes at least a lower conductor layer provided on the substrate and patterned into a plurality of pattern portions connected electrically to the terminals, an insulator layer provided on the lower conductor layer, and an upper conductor layer provided above the insulator layer. The upper conductor layer is formed with a connection area immediately below the lead wires on the semiconductor chip when the semiconductor chip is mounted on the substrate, the upper conductor layer is patterned in the connection area into a plurality of conductor strips extending parallel with each other in correspondence to the lead wires, the insulator layer is provided with contact holes so as to connect electrically the conductor strips of the upper conductor layer with the pattern portions of the lower conductor layer. In the semiconductor device, each of the pattern portions in the connection area has an edge extending obliquely to the conductor strips of the upper conductor layer wherein the pattern portions are disposed so that a pair of adjacent pattern portions have respective edges opposing with each other and extending parallel with each other with a lateral gap extending therebetween.

公开(公告)号：US08336756B2

公开(公告)日：2012-12-25

申请号：US11361041

申请日：2006-02-24

申请人： Hiroyuki Matsui ,  Hirohisa Matsuki ,  Koki Otake

发明人： Hiroyuki Matsui ,  Hirohisa Matsuki ,  Koki Otake

IPC分类号： B23K1/00 ,  H01L21/44

CPC分类号： H01L24/11 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/3025

摘要： A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.

摘要翻译： 公开了一种回流装置，其中使用甲酸清洗处理对象上的焊料电极的表面。 回流装置包括处理室，用于向处理室供给含有甲酸的气氛气体的甲酸引入机构，以及由对甲酸具有耐腐蚀性的材料制成的屏蔽构件。 屏蔽部件配置在处理室的回流处理部和处理室的内壁之间。 代替或除了屏蔽构件之外，回流装置可以包括用于分解残余甲酸的加热器。

公开(公告)号：US08084277B2

公开(公告)日：2011-12-27

申请号：US12453715

申请日：2009-05-20

申请人： Hirohisa Matsuki ,  Jun Fukuda

发明人： Hirohisa Matsuki ,  Jun Fukuda

IPC分类号： H01L21/00

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L27/11502 ,  H01L28/57 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/1134 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48477 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/85051 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/15183 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

摘要翻译： 一种提高FeRAM耐湿性的半导体器件及其制造方法。 在使用垫的探针测试之后，形成金属膜以覆盖保护膜的开口中的衬垫和从衬垫到保护膜的开口外周的区域。 在金属膜上形成金属凸块。 金属膜形成为具有第一和第二金属膜的两层结构。 下层和上层的材料主要考虑到对保护膜的粘合性和与金属凸块的粘合性的选择。 其成膜条件被设定为提供具有期望质量和厚度的金属膜。 因此，可以防止水分从焊盘或周围渗透到铁电电容器中，因此可以有效地抑制由于渗透水分导致的潜在的反转异常的发生。

公开(公告)号：US20110156248A1

公开(公告)日：2011-06-30

申请号：US12975961

申请日：2010-12-22

申请人： Hirohisa Matsuki

发明人： Hirohisa Matsuki

IPC分类号： H01L23/48 ,  H01L29/40 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1162 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/20101 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/2064 ,  H01L2924/00

摘要： A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film.

摘要翻译： 一种半导体器件包括：具有电极焊盘的集成电路; 布置在所述集成电路上的第一绝缘层; 包括多个布线并设置在第一绝缘层上的再分配层，多个布线中的至少一个电连接到电极焊盘; 在所述多个布线的至少一部分上具有开口的第二绝缘层; 金属膜，设置在所述开口和所述第二绝缘层上，并且电耦合到所述多个布线中的至少一个布线; 以及焊料凸块，所述焊料凸块突出地覆盖所述多个布线中的至少一个未电耦合到所述金属膜的布线。

公开(公告)号：US20100155941A1

公开(公告)日：2010-06-24

申请号：US12690469

申请日：2010-01-20

申请人： Hirohisa Matsuki ,  Kazuyuki Imamura

发明人： Hirohisa Matsuki ,  Kazuyuki Imamura

IPC分类号： H01L23/498

CPC分类号： H01L23/49816 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49894 ,  H01L23/525 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05557 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/30105

摘要： A semiconductor device includes multiple electrode pads provided in an interconnection layer over a semiconductor substrate; an insulating layer provided on the interconnection layer so as to expose portions of the electrode pads; multiple conductive layers having their respective first ends connected to the exposed portions of the corresponding electrode pads so as to extend therefrom on the insulating layer; and multiple protruding electrodes provided at respective second ends of the conductive layers, wherein the conductive layers extend in a given direction relative to the electrode pads.

摘要翻译： 半导体器件包括设置在半导体衬底上的互连层中的多个电极焊盘; 绝缘层，设置在所述互连层上以暴露所述电极焊盘的部分; 多个导电层，其各自的第一端连接到相应的电极焊盘的暴露部分，从而在绝缘层上延伸; 以及设置在所述导电层的相应第二端处的多个突出电极，其中所述导电层相对于所述电极焊盘沿给定方向延伸。

公开(公告)号：US20070228561A1

公开(公告)日：2007-10-04

申请号：US11529376

申请日：2006-09-29

申请人： Hirohisa Matsuki ,  Jun Fukuda

发明人： Hirohisa Matsuki ,  Jun Fukuda

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L27/11502 ,  H01L28/57 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/1134 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48477 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/85051 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/15183 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

摘要翻译： 一种提高FeRAM耐湿性的半导体器件及其制造方法。 在使用垫的探针测试之后，形成金属膜以覆盖保护膜的开口中的衬垫和从衬垫到保护膜的开口外周的区域。 在金属膜上形成金属凸块。 金属膜形成为具有第一和第二金属膜的两层结构。 下层和上层的材料主要考虑到对保护膜的粘合性和与金属凸块的粘合性的选择。 其成膜条件被设定为提供具有期望质量和厚度的金属膜。 因此，可以防止水分从焊盘或周围渗透到铁电电容器中，因此可以有效地抑制由于渗透水分导致的潜在的反转异常的发生。

公开(公告)号：US07240432B2

公开(公告)日：2007-07-10

申请号：US11147167

申请日：2005-06-08

申请人： Shigeyuki Maruyama ,  Hirohisa Matsuki

发明人： Shigeyuki Maruyama ,  Hirohisa Matsuki

IPC分类号： H01R43/01

CPC分类号： G01R1/0408 ,  G01R1/073 ,  H05K3/326 ,  Y10T29/49151 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/49217 ,  Y10T29/49218

摘要： A contactor is placed between a semiconductor device and a test board. A contact electrode of the contactor electrically connects the semiconductor device to the test board. The contact electrode is formed of a conductive layer provided on an insulating substrate. The contact electrode comprises a first contact piece which contacts a terminal of the semiconductor device, a second contact piece which contacts an electrode of the test board, and a connecting portion which electrically connects the first contact piece and the second contact piece.

摘要翻译： 接触器放置在半导体器件和测试板之间。 接触器的接触电极将半导体器件电连接到测试板。 接触电极由设置在绝缘基板上的导电层形成。 接触电极包括接触半导体器件的端子的第一接触片，与测试板的电极接触的第二接触片和电连接第一接触片和第二接触片的连接部。

公开(公告)号：US20050224970A1

公开(公告)日：2005-10-13

申请号：US10924206

申请日：2004-08-24

申请人： Hirohisa Matsuki ,  Masamitsu Ikumo

发明人： Hirohisa Matsuki ,  Masamitsu Ikumo

IPC分类号： H01L27/04 ,  H01L21/60 ,  H01L21/66 ,  H01L21/822 ,  H01L23/48 ,  H01L23/498 ,  H01L23/52 ,  H01L23/58

CPC分类号： H01L22/32 ,  H01L23/49855 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/1147 ,  Y10S257/922

摘要： A semiconductor device has antenna pads and a testing pad formed on the substrate. An insulating resin layer containing a filler covers the testing pad, and bumps are provided on the antenna pads. Specific data in the semiconductor device are inhibited from being read out or rewritten, by the provision of the insulating resin layer containing a filler.

摘要翻译： 半导体器件具有形成在衬底上的天线焊盘和测试焊盘。 包含填充物的绝缘树脂层覆盖测试垫，并且在天线焊盘上设置凸块。 通过设置含有填料的绝缘树脂层，可以抑制半导体器件中的具体数据被读出或重写。

公开(公告)号：US06836025B2

公开(公告)日：2004-12-28

申请号：US10448444

申请日：2003-05-30

申请人： Tetsuya Fujisawa ,  Hirohisa Matsuki ,  Osamu Igawa ,  Yoshitaka Aiba ,  Masamitsu Ikumo ,  Mitsutaka Sato

发明人： Tetsuya Fujisawa ,  Hirohisa Matsuki ,  Osamu Igawa ,  Yoshitaka Aiba ,  Masamitsu Ikumo ,  Mitsutaka Sato

IPC分类号： H01L2348

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05599 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/24137 ,  H01L2224/24145 ,  H01L2224/24155 ,  H01L2224/24195 ,  H01L2224/24226 ,  H01L2224/24265 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/83132 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/85399 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19107 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a semiconductor device circuit formation surfaces of each of a plurality of semiconductor chips can be easily located at even level when the semiconductor chips are arranged side by side so that a process of forming rearrangement wiring is simplified. The semiconductor chips are mounted on a substrate via an adhesive layer in a two-dimensional arrangement. A resin layer is formed on the substrate and located around the semiconductor elements. The resin layer has the same thickness as a thickness of the semiconductor elements. An organic insulating layer is formed over a surface of the resin layer and circuit formation surfaces of the semiconductor elements. A rearrangement wiring layer is formed on the organic insulating layer and electrodes of the semiconductor chips. External connection terminals are electrically connected to the circuit formation surfaces of the semiconductor elements through wiring in the rearrangement wiring layer.

摘要翻译： 在半导体器件中，当半导体芯片并排布置时，多个半导体芯片中的每一个的形成表面可以容易地位于均匀的水平，从而简化了布置布线的处理。 半导体芯片通过二维布置的粘合剂层安装在基板上。 树脂层形成在基板上并位于半导体元件周围。 树脂层的厚度与半导体元件的厚度相同。 在树脂层的表面和半导体元件的电路形成表面上形成有机绝缘层。 在有机绝缘层和半导体芯片的电极上形成重排布线层。 外部连接端子通过布线布线层中的布线电连接到半导体元件的电路形成表面。

公开(公告)号：US08490857B2

公开(公告)日：2013-07-23

申请号：US13436843

申请日：2012-03-31

申请人： Hiroyuki Matsui ,  Hirohisa Matsuki ,  Koki Otake

发明人： Hiroyuki Matsui ,  Hirohisa Matsuki ,  Koki Otake

IPC分类号： B23K1/00 ,  H01L21/44

CPC分类号： H01L24/11 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/3025

摘要： A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.

摘要翻译： 公开了一种回流装置，其中使用甲酸清洗处理对象上的焊料电极的表面。 回流装置包括处理室，用于向处理室供给含有甲酸的气氛气体的甲酸引入机构，以及由对甲酸具有耐腐蚀性的材料制成的屏蔽构件。 屏蔽部件配置在处理室的回流处理部和处理室的内壁之间。 代替或除了屏蔽构件之外，回流装置可以包括用于分解残余甲酸的加热器。