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公开(公告)号：US07538412B2
公开(公告)日：2009-05-26
申请号：US11480150
申请日：2006-06-30
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack , Carsten Schaeffer , Frank Pfirsch
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack , Carsten Schaeffer , Frank Pfirsch
IPC分类号： H01L27/082
CPC分类号： H01L29/861 , H01L29/7396
摘要： A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.
摘要翻译： 一种半导体器件包括半导体材料，该半导体材料包括一个基极区域和一个具有邻近基极区域的第一侧面和与第一侧相对的第二侧面的场阻挡区域。 场停止区包括第一掺杂剂注入和第二掺杂剂注入。 第一掺杂剂注入具有最大的第一掺杂剂浓度，并且第二掺杂剂注入具有最大的第二掺杂剂浓度，其中第一掺杂剂浓度最大值小于第二掺杂剂浓度最大值，并且位于比第二掺杂剂浓度最大值更靠近第二侧 。
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公开(公告)号：US20080001257A1
公开(公告)日：2008-01-03
申请号：US11480150
申请日：2006-06-30
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack , Carsten Schaeffer , Frank Pfirsch
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack , Carsten Schaeffer , Frank Pfirsch
IPC分类号： H01L27/082
CPC分类号： H01L29/861 , H01L29/7396
摘要： A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.
摘要翻译： 一种半导体器件包括半导体材料，该半导体材料包括一个基极区域和一个具有邻近基极区域的第一侧面和与第一侧相对的第二侧面的场阻挡区域。 场停止区包括第一掺杂剂注入和第二掺杂剂注入。 第一掺杂剂注入具有最大的第一掺杂剂浓度，并且第二掺杂剂注入具有最大的第二掺杂剂浓度，其中第一掺杂剂浓度最大值小于第二掺杂剂浓度最大值，并且位于比第二掺杂剂浓度最大值更靠近第二侧 。
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公开(公告)号：US10566462B2
公开(公告)日：2020-02-18
申请号：US12512285
申请日：2009-07-30
IPC分类号： H01L29/861
摘要： A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.
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公开(公告)号：US08482062B2
公开(公告)日：2013-07-09
申请号：US13610240
申请日：2012-09-11
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。
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公开(公告)号：US06963088B2
公开(公告)日：2005-11-08
申请号：US10797246
申请日：2004-03-10
IPC分类号： H01L21/822 , H01L27/04 , H01L29/74 , H01L29/8605
CPC分类号： H01L29/7408 , H01L29/8605
摘要： A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential resistance dR is radially constant or the power dissipated in the resistance is radially constant.
摘要翻译： 半导体部件布置在半导体本体中并且具有至少一个具有位置相关薄片电阻的集成的径向对称横向电阻，其径向相关性优选地构造成使得差动电阻dR是径向恒定的或在 电阻是径向恒定的。
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公开(公告)号：US20120313225A1
公开(公告)日：2012-12-13
申请号：US13564158
申请日：2012-08-01
CPC分类号： H01L29/7802 , H01L21/263 , H01L21/266 , H01L21/322 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。
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公开(公告)号：US08264033B2
公开(公告)日：2012-09-11
申请号：US12506844
申请日：2009-07-21
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。
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8.发明授权公开(公告)号：US08343862B2
公开(公告)日：2013-01-01
申请号：US13103784
申请日：2011-05-09
IPC分类号： H01L21/425
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/167 , H01L29/32 , H01L29/36
摘要： Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
摘要翻译： 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。
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9.发明申请SEMICONDUCTOR DEVICE WITH A FIELD STOP ZONE AND PROCESS OF PRODUCING THE SAME 有权具有现场停止区域的半导体器件及其制造方法公开(公告)号：US20110207310A1
公开(公告)日：2011-08-25
申请号：US13103784
申请日：2011-05-09
IPC分类号： H01L21/265
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/167 , H01L29/32 , H01L29/36
摘要： Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
摘要翻译： 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。
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公开(公告)号：US20080122001A1
公开(公告)日：2008-05-29
申请号：US11944903
申请日：2007-11-26
CPC分类号： H01L29/7802 , H01L21/263 , H01L21/266 , H01L21/322 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。
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