公开(公告)号：US20140121538A1

公开(公告)日：2014-05-01

申请号：US14127692

申请日：2012-06-13

Applicant: Bernardus Hendrikus Wilhelmus Hendriks ,  Waltherus Cornelis Jozef Bierhoff ,  Gerhardus Wilhelmus Lucassen ,  Jeroen Jan Lambertus Horiks ,  Susanne Dorien Van Den Bergdams ,  Christian Reich ,  Stephan Voss ,  Axel Winkel ,  Rami Nachabe ,  Manfred Muller ,  Marjolein Van Der Voort

Inventor： Bernardus Hendrikus Wilhelmus Hendriks ,  Waltherus Cornelis Jozef Bierhoff ,  Gerhardus Wilhelmus Lucassen ,  Jeroen Jan Lambertus Horiks ,  Susanne Dorien Van Den Bergdams ,  Christian Reich ,  Stephan Voss ,  Axel Winkel ,  Rami Nachabe ,  Manfred Muller ,  Marjolein Van Der Voort

IPC: A61B5/00 ,  A61B10/02 ,  A61B1/00 ,  A61B1/06 ,  A61B1/07

CPC classification number: A61B1/00009 ,  A61B1/0646 ,  A61B1/0684 ,  A61B1/07 ,  A61B5/0071 ,  A61B5/0073 ,  A61B5/0075 ,  A61B5/0084 ,  A61B5/6848 ,  A61B10/0233 ,  F04C2270/0421 ,  Y10T29/49826

Abstract: A needle is proposed including a cannula or hollow shaft with a multilumen insert inside. The insert comprises at least two lumen. Both the insert as well as the cannula have bevelled ends. In the insert substantially straight cleaved fibers are present that may be connected at the proximal end to a console. At least one of the distal fiber ends in the insert may protrude more than half the fiber diameter out of the insert. Furthermore, the bevel angle of the insert is different from the bevel angle of the cannula such that combination cannula and insert is such that the fiber ends do not protrude the bevel surface of the cannula.

Abstract translation: 提出了一种针头，其中包括插入件或空心轴，其中具有多孔插入件。 插入件包括至少两个内腔。 插入件以及套管均具有倾斜端部。 在插入件中，存在基本上直的切割的纤维，其可以在近端连接到控制台。 插入件中的远端纤维端部中的至少一个可以突出超过插入件的纤维直径的一半以上。 此外，插入件的斜角与插管的斜角不同，使得组合插管和插入件使得纤维端部不突出套管的斜面。

公开(公告)号：US08343862B2

公开(公告)日：2013-01-01

申请号：US13103784

申请日：2011-05-09

Applicant: Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

Inventor： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

IPC: H01L21/425

CPC classification number: H01L29/7395 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36

Abstract: Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.

Abstract translation: 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。

公开(公告)号：US20110207310A1

公开(公告)日：2011-08-25

申请号：US13103784

申请日：2011-05-09

Applicant: Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

Inventor： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

IPC: H01L21/265

CPC classification number: H01L29/7395 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36

Abstract: Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.

Abstract translation: 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。

公开(公告)号：US20100155879A1

公开(公告)日：2010-06-24

申请号：US12640532

申请日：2009-12-17

Applicant: Hans-Joachim Schulze ,  Stephan Voss ,  Markus Zundel

Inventor： Hans-Joachim Schulze ,  Stephan Voss ,  Markus Zundel

IPC: H01L29/06

CPC classification number: H01L29/4236 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/51 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor device is provided that comprises a semiconductor substrate comprising an active area and a peripheral region adjacent the active area and structure positioned in the peripheral region for hindering the diffusion of mobile ions from the peripheral region into the active area.

Abstract translation: 提供一种半导体器件，其包括半导体衬底，该半导体衬底包括有源区域和邻近有源区域的周边区域和位于周边区域中的结构，用于阻止移动离子从周边区域扩散到有源区域中。

公开(公告)号：US20080054369A1

公开(公告)日：2008-03-06

申请号：US11468846

申请日：2006-08-31

Applicant: Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

Inventor： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

IPC: H01L29/739 ,  H01L21/8249

CPC classification number: H01L29/7395 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36

Abstract: Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.

Abstract translation: 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。

公开(公告)号：US09082741B2

公开(公告)日：2015-07-14

申请号：US13475319

申请日：2012-05-18

Applicant: Stephan Voss ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

Inventor： Stephan Voss ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  H01L29/08 ,  H01L29/861 ,  H01L29/739 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167

CPC classification number: H01L29/157 ,  H01L29/08 ,  H01L29/10 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/861

Abstract: A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region. The second semiconductor region includes a second semiconductor material different from the first semiconductor material. The semiconductor device further includes a drift or base zone in the first semiconductor region. The semiconductor device further includes an emitter region in the second semiconductor region. The second semiconductor region includes at least one type of deep-level dopant. A solubility of the at least one type of deep-level dopant is higher in the second semiconductor region than in the first semiconductor region.

Abstract translation: 半导体器件包括包括第一半导体材料的第一半导体区域。 半导体器件还包括邻接第一半导体区域的第二半导体区域。 第二半导体区域包括与第一半导体材料不同的第二半导体材料。 半导体器件还包括第一半导体区域中的漂移或基极区域。 半导体器件还包括在第二半导体区域中的发射极区域。 第二半导体区域包括至少一种类型的深层掺杂剂。 第二半导体区域中的至少一种类型的深层掺杂剂的溶解度高于第一半导体区域中的溶解度。

公开(公告)号：US08866255B2

公开(公告)日：2014-10-21

申请号：US12640532

申请日：2009-12-17

Applicant: Hans-Joachim Schulze ,  Stephan Voss ,  Markus Zundel

Inventor： Hans-Joachim Schulze ,  Stephan Voss ,  Markus Zundel

IPC: H01L21/762 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06

CPC classification number: H01L29/4236 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/51 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor device is provided that comprises a semiconductor substrate comprising an active area and a peripheral region adjacent the active area and structure positioned in the peripheral region for hindering the diffusion of mobile ions from the peripheral region into the active area.

Abstract translation: 提供一种半导体器件，其包括半导体衬底，该半导体衬底包括有源区域和邻近有源区域的周边区域和位于周边区域中的结构，用于阻止移动离子从周边区域扩散到有源区域中。

公开(公告)号：US20130307018A1

公开(公告)日：2013-11-21

申请号：US13475319

申请日：2012-05-18

Applicant: Stephan Voss ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

Inventor： Stephan Voss ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78

CPC classification number: H01L29/157 ,  H01L29/08 ,  H01L29/10 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/861

Abstract: A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region. The second semiconductor region includes a second semiconductor material different from the first semiconductor material. The semiconductor device further includes a drift or base zone in the first semiconductor region. The semiconductor device further includes an emitter region in the second semiconductor region. The second semiconductor region includes at least one type of deep-level dopant. A solubility of the at least one type of deep-level dopant is higher in the second semiconductor region than in the first semiconductor region.

Abstract translation: 半导体器件包括包括第一半导体材料的第一半导体区域。 半导体器件还包括邻接第一半导体区域的第二半导体区域。 第二半导体区域包括与第一半导体材料不同的第二半导体材料。 半导体器件还包括第一半导体区域中的漂移或基极区域。 半导体器件还包括在第二半导体区域中的发射极区域。 第二半导体区域包括至少一种类型的深层掺杂剂。 第二半导体区域中的至少一种类型的深层掺杂剂的溶解度高于第一半导体区域中的溶解度。

公开(公告)号：US07989888B2

公开(公告)日：2011-08-02

申请号：US11468846

申请日：2006-08-31

Applicant: Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

Inventor： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

IPC: H01L29/66

CPC classification number: H01L29/7395 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36

Abstract: Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.

Abstract translation: 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。