摘要:
The invention relates to a method for the treatment of a composition containing inorganic silanes and at least one foreign metal and/or a compound containing a foreign metal, wherein the composition is brought in contact with at least one adsorption agent, and for obtaining the composition, in which the content of foreign metal and/or of a compound containing a foreign metal is reduced, and to a corresponding composition having a reduced foreign metal content, and further to the use of organic resins, activated carbons, silicates, and/or zeolites for the reduction of foreign metals and/or compounds containing foreign metals in compositions of inorganic silanes.
摘要:
The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.
摘要:
The invention relates to a process for dismutating at least one halosilane and reducing the content of extraneous metal and/or a compound containing extraneous metal in the at least one halosilane and in the at least one silane obtained, by contacting at least one halosilane of the general formula I, HnSiClm (I), where n and m are integers and n=1, 2 or 3 and m=1, 2 or 3 and n+m=4, with a particulate, organic, amino-functional resin to obtain at least one silane of the general formula II, HaSiClb (II), where a and b are integers and a=0, 2, 3 or 4 and b=0, 1, 2 or 4 where a+b=4, in one step, in which the content of extraneous metal and/or compounds containing extraneous metal has been reduced compared to the halosilane of the formula I. The invention further provides for the use of this resin for dismutating halosilanes and as an absorbent of extraneous metals or compounds containing extraneous metal in a process for preparing monosilane.
摘要:
The invention relates to a process for treating a composition comprising organosilanes and at least one polar organic compound and/or at least one extraneous metal and/or a compound containing extraneous metal, wherein the composition is contacted with at least one adsorbent and a composition in which the content of the organic polar compound and/or of the extraneous metal and/or of the compound containing extraneous metal is reduced is subsequently obtained, and also to a corresponding composition in which the content of polar organic compounds and/or extraneous metals has been reduced to traces, and to the use of organic resins, activated carbons, silicates and/or zeolites for reducing the amounts of the compounds mentioned.
摘要:
The invention relates to a process for dismutating at least one halosilane and reducing the content of extraneous metal and/or a compound containing extraneous metal in the at least one halosilane and in the at least one silane obtained, by contacting at least one halosilane of the general formula I, HnSiClm (I), where n and m are integers and n=1, 2 or 3 and m=1, 2 or 3 and n+m=4, with a particulate, organic, amino-functional resin to obtain at least one silane of the general formula II, HaSiClb (II), where a and b are integers and a=0, 2, 3 or 4 and b=0, 1, 2 or 4 where a+b=4, in one step, in which the content of extraneous metal and/or compounds containing extraneous metal has been reduced compared to the halosilane of the formula I. The invention further provides for the use of this resin for dismutating halosilanes and as an absorbent of extraneous metals or compounds containing extraneous metal in a process for preparing monosilane.
摘要:
The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.
摘要:
The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n≧3 and X═F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR″bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R′ and/or R″ are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R′ and R″ (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R′ or R″ is unequal —CH3 and/or wherein bb) R and R′ and/or R″' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N═, or cc) (if a=b=c=0) R═≡C-R′″ (with R′″═—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SimX2m+2 (with m>n and X═F, Cl, Br and/or I) and SiX4 (with X═F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SimH2m+2 while forming a hydridosilane of the generic formula SimH2m+2. The invention also relates to the hydridosilanes producible according to said method and to their use.
摘要:
The invention relates to a process for preparing monochlorosilane by reaction of monosilane and dichlorosilane in the presence of a catalyst. In the process of the invention, monochlorosilane is formed by comproportionation of monosilane and dichlorosilane. The invention further relates to the use of the monochlorosilane produced and also a plant for carrying out the process.
摘要:
The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n≧3 and X═F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR″bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R′ and/or R″ are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R′ and R″ (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R′ or R″ is unequal —CH3 and/or wherein bb) R and R′ and/or R″' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N═, or cc) (if a=b=c=0) R═≡C-R′″ (with R′″═—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SimX2m+2 (with m>n and X═F, Cl, Br and/or I) and SiX4 (with X═F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SimH2m+2 while forming a hydridosilane of the generic formula SimH2m+2. The invention also relates to the hydridosilanes producible according to said method and to their use
摘要:
The invention relates to a process for treating a composition containing silicon compounds, especially organosilanes and/or inorganic silanes, and at least one extraneous metal and/or a compound containing extraneous metal, wherein the composition is contacted with at least one adsorbent and/or a first filter and then a composition in which the content of the extraneous metal and/or of the compound containing extraneous metal has been reduced is obtained. The invention further relates to the use of organic resins, activated carbon, silicates and/or zeolites and/or else of at least one filter with small pore sizes to reduce the level of the compounds mentioned.