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    REMOVAL OF FOREIGN METALS FROM INORGANIC SILANES
    1.
    发明申请
    REMOVAL OF FOREIGN METALS FROM INORGANIC SILANES 审中-公开
    从无机硅中去除外来金属

    公开(公告)号：US20100266489A1

    公开(公告)日：2010-10-21

    申请号：US12738246

    申请日：2008-08-20

    申请人： Hartwig Rauleder ,  Ekkehard Mueh ,  Jaroslaw Monkiewicz ,  Hans Juergen Hoene ,  Raymund Sonnenschein

    发明人： Hartwig Rauleder ,  Ekkehard Mueh ,  Jaroslaw Monkiewicz ,  Hans Juergen Hoene ,  Raymund Sonnenschein

    IPC分类号： C01B33/107 ,  C01B39/02 ,  C08J5/20 ,  C01B33/20 ,  C01B31/08 ,  B01J20/10 ,  C07F7/08

    CPC分类号： C01B33/046 ,  B01D53/02 ,  B01D2253/108 ,  C01B33/10784

    摘要： The invention relates to a method for the treatment of a composition containing inorganic silanes and at least one foreign metal and/or a compound containing a foreign metal, wherein the composition is brought in contact with at least one adsorption agent, and for obtaining the composition, in which the content of foreign metal and/or of a compound containing a foreign metal is reduced, and to a corresponding composition having a reduced foreign metal content, and further to the use of organic resins, activated carbons, silicates, and/or zeolites for the reduction of foreign metals and/or compounds containing foreign metals in compositions of inorganic silanes.

    摘要翻译： 本发明涉及一种处理包含无机硅烷和至少一种外来金属和/或含有外来金属的化合物的组合物的方法，其中所述组合物与至少一种吸附剂接触，并且用于获得组合物 ，其中外来金属和/或含有外来金属的化合物的含量降低，并且降低了外来金属含量降低的相应组合物，并且还使用有机树脂，活性炭，硅酸盐和/或 用于在无机硅烷组合物中还原外来金属和/或含有外来金属的化合物的沸石。

    Device and process for the deposition of ultrafine particles from the gas phase
    3.
    发明授权
    Device and process for the deposition of ultrafine particles from the gas phase 有权
    从气相沉积超细颗粒的装置和工艺

    公开(公告)号：US07799274B2

    公开(公告)日：2010-09-21

    申请号：US10581458

    申请日：2004-10-13

    申请人： Peter Adler ,  Wolfgang Pirzl ,  Raymund Sonnenschein

    发明人： Peter Adler ,  Wolfgang Pirzl ,  Raymund Sonnenschein

    IPC分类号： G01N31/12 ,  B01J10/00 ,  B01J10/02 ,  B01J12/00 ,  B01J12/02 ,  B01J14/00 ,  B01J15/00 ,  B01J16/00 ,  B01J19/00 ,  F27B15/08

    CPC分类号： C01B33/029 ,  B01J19/087 ,  B01J2219/00085 ,  B01J2219/00135 ,  B01J2219/0875 ,  C01B21/068 ,  C01B33/183

    摘要： A device for the thermal decomposition of a volatile compound, and for deposition of particles which are formed by the decomposition, includes (a) a pressure vessel, (b) at least one reaction tube located inside the pressure vessel such that, an open end of the reaction tube extends into the pressure vessel and an other end of the reaction tube is located outside the pressure vessel and is provided with a gas feed, wherein a longitudinal axis of the reaction tube is oriented in the direction of gravity and parallel to a longitudinal axis of the pressure vessel and wherein the reaction tube can be heated on a gas inlet side and cooled on a gas outlet side, wherein the pressure vessel, in its lower part, comprises a collection cone, wherein the open end of the at least one reaction tube extends into a gas space of the collection cone, wherein the collection cone is connected to an outlet lock for particles, and (c) a gas outlet unit located mainly inside the pressure vessel, the gas outlet unit comprising a gas guide, a gas inlet region, wherein the gas inlet region is in communication with the gas space of the collection cone, a filter system, and a gas outlet, which is located outside the pressure vessel.

    摘要翻译： 挥发性化合物的热分解装置和通过分解形成的颗粒的沉积装置包括（a）压力容器，（b）位于压力容器内部的至少一个反应管，使得开口端 的反应管延伸到压力容器中，并且反应管的另一端位于压力容器外部并且设置有气体进料，其中反应管的纵向轴线沿重力方向定向并平行于 压力容器的纵向轴线，并且其中反应管可以在气体入口侧被加热并在气体出口侧被冷却，其中压力容器在其下部包括收集锥体，其中至少该开口端 一个反应管延伸到收集锥体的气体空间中，其中收集锥体连接到用于颗粒的出口锁，和（c）主要位于压力容器内部的气体出口单元，气体出口 其包括气体引导件，气体入口区域，其中所述气体入口区域与所述收集锥体的气体空间，过滤器系统和气体出口连通，所述气体入口区域位于所述压力容器的外部。

    Silicon and method for producing the same
    4.
    发明授权
    Silicon and method for producing the same 失效
    硅及其制造方法

    公开(公告)号：US07758839B2

    公开(公告)日：2010-07-20

    申请号：US11569774

    申请日：2005-05-10

    申请人： Peter Adler ,  Andreas Gölz ,  Holger Kirchner ,  Armin Müller ,  Torsten Sill ,  Raymund Sonnenschein

    发明人： Peter Adler ,  Andreas Gölz ,  Holger Kirchner ,  Armin Müller ,  Torsten Sill ,  Raymund Sonnenschein

    IPC分类号： C01B33/29 ,  C01B33/27 ,  C01B33/02 ,  F16C13/00

    CPC分类号： C01B33/02 ,  C01B33/027 ,  C01B33/029

    摘要： Method for producing silicon which is suitable as a starting material for producing a silicon melt for the fabrication of silicon blocks or silicon crystals, comprising the following steps: introducing a gaseous mixture of monosilane and hydrogen into a reactor, thermal degrading the gaseous mixture for forming silicon powder, separating the formed silicon powder produced from the gaseous mixture, and mechanical compacting the separated silicon powder with compacting rollers which having a roller jacket consisting of a ceramic material selected from graphite, glass and silicon nitride.

    摘要翻译： 制备硅的方法，其适合作为用于制造硅块或硅晶体的硅熔体的起始材料，其包括以下步骤：将甲硅烷和氢气的气态混合物引入反应器中，热降解用于形成的气体混合物 硅粉末，分离由气态混合物生成的形成的硅粉末，并用具有由选自石墨，玻璃和氮化硅的陶瓷材料组成的辊套的压实辊机械压实分离的硅粉末。

    Reactor and Method for Manufacturing Silicon
    6.
    发明申请
    Reactor and Method for Manufacturing Silicon 审中-公开
    反应器和硅制造方法

    公开(公告)号：US20070251447A1

    公开(公告)日：2007-11-01

    申请号：US11573061

    申请日：2005-07-26

    申请人： Armin Muller ,  Torsten Sill ,  Raymund Sonnenschein ,  Peter Adler

    发明人： Armin Muller ,  Torsten Sill ,  Raymund Sonnenschein ,  Peter Adler

    IPC分类号： C01B33/035

    CPC分类号： C01B33/035 ,  C30B29/06

    摘要： A reactor for separating a gas containing silicon is provided with at least one electrically heatable deposition element of silicon to save costs, which element has a doping with at least one impurity to improve its electrical conductivity, the doping having a concentration in an initial state, such that the deposition element with the silicon deposited thereon in the final state is suitable for the manufacture of silicon melt for the production of polycrystalline silicon blocks or single silicon crystals for photovoltaics. A method for manufacturing silicon with the reactor according to the invention and the use of the manufactured silicon in photovoltaics are also described.

    摘要翻译： 用于分离含硅气体的反应器设置有至少一个可电镀硅的沉积元件以节省成本，该元件具有掺杂至少一种杂质以改善其导电性，该掺杂在初始状态下具有浓度， 使得在最终状态下沉积有硅的沉积元件适于制造用于生产用于光伏的多晶硅块或单晶硅晶体的硅熔体。 还描述了使用根据本发明的反应器制造硅的方法以及制造的硅在光伏中的用途。

    Process for producing silicon
    7.
    发明申请
    Process for producing silicon 失效
    硅生产工艺

    公开(公告)号：US20070148075A1

    公开(公告)日：2007-06-28

    申请号：US10587399

    申请日：2005-01-06

    申请人： Tim Popken ,  Raymund Sonnenschein

    发明人： Tim Popken ,  Raymund Sonnenschein

    IPC分类号： C01B33/021

    CPC分类号： C01B33/035 ,  C01B33/027

    摘要： The present invention relates to a process for producing silicon by thermal decomposition of a gaseous mixture comprising monosilane, monochlorosilane and, if desired, further chlorosilanes, e.g. dichlorosilane.

    摘要翻译： 本发明涉及一种通过热分解生产硅的方法，所述气体混合物包括甲硅烷，一氯硅烷和（如果需要的话）其它氯硅烷，例如， 二氯硅烷。

    Apparatus and process for preparing silanes
    9.
    发明授权
    Apparatus and process for preparing silanes 有权
    硅烷制备装置及方法

    公开(公告)号：US08038961B2

    公开(公告)日：2011-10-18

    申请号：US11575226

    申请日：2005-07-21

    申请人： Raymund Sonnenschein ,  Peter Adler ,  Tim Pöpken ,  John Kahsnitz

    发明人： Raymund Sonnenschein ,  Peter Adler ,  Tim Pöpken ,  John Kahsnitz

    IPC分类号： B01J8/02 ,  C01B33/107

    CPC分类号： C01B33/107 ,  B01D3/009 ,  B01J8/025 ,  C01B33/1071 ,  C01B33/10773 ,  Y02P20/127 ,  Y10S203/06

    摘要： Provided is an apparatus for preparing silanes of the general formula HnSiCU n where n=1, 2, 3 and/or 4 by dismutation of a chlorinated silane in the presence of a catalyst, wherein the apparatus includes: a distillation column having a column bottom, a column top, at least one feed inlet, a plurality of product offtakes, and a chimney tray; and a side reactor containing a catalyst bed having an upper edge, the side reactor being connected to the distillation column via at least three pipes including a first pipe, a second pipe, and a third pipe.

    摘要翻译： 提供了一种通过在催化剂存在下通过氯化硅烷歧化来制备通式为H n SiCU n的硅烷的装置，其中n = 1,2,3和/或4，其中该装置包括：具有柱底的蒸馏塔 ，塔顶，至少一个进料入口，多个产品出口和烟囱托盘; 以及含有具有上边缘的催化剂床的侧反应器，所述侧反应器经由包括第一管，第二管和第三管的至少三个管连接到所述蒸馏塔。

    PROCESS FOR PRODUCING MONOSILANE
    10.
    发明申请
    PROCESS FOR PRODUCING MONOSILANE 失效
    生产单体的方法

    公开(公告)号：US20090155156A1

    公开(公告)日：2009-06-18

    申请号：US12088286

    申请日：2006-06-19

    申请人： Raymund Sonnenschein ,  Peter Adler ,  Yuriy Kasatkin ,  Adolf Petrik ,  Leonid Schwarzmann

    发明人： Raymund Sonnenschein ,  Peter Adler ,  Yuriy Kasatkin ,  Adolf Petrik ,  Leonid Schwarzmann

    IPC分类号： C01B33/08 ,  B01J19/00

    CPC分类号： C01B33/043 ,  B01D3/009 ,  B01J8/0085 ,  B01J8/009 ,  B01J8/025 ,  B01J8/0285 ,  B01J8/0426 ,  B01J8/0438 ,  B01J8/0453 ,  B01J8/048 ,  B01J8/0484 ,  B01J8/0492 ,  B01J8/0496 ,  B01J8/065 ,  B01J8/067 ,  B01J19/30 ,  B01J19/32 ,  B01J2208/00176 ,  B01J2208/00212 ,  B01J2208/00221 ,  B01J2208/00247 ,  B01J2208/00274 ,  B01J2208/00283 ,  B01J2208/0053 ,  B01J2208/00884 ,  B01J2208/021 ,  B01J2219/30475 ,  B01J2219/32466 ,  B01J2219/3325 ,  C01B33/10773 ,  Y02P20/127 ,  Y10S203/06

    摘要： The present invention relates to a plant and a process for the continuous production of monosilane and tetrachlorosilane by catalytic dismutation of trichlorosilane at an operating temperature and a pressure of from 1 to 50 bar abs. in a plant according to claim 1, in which—trichlorosilane (A) is preheated in a heat exchanger (7), and fed to the 10 countercurrent reactor (1) which is provided with catalyst (3),—product mixture formed in the countercurrent reactor (1) is at least partly condensed by means of the condenser (5) at a temperature in the range from −25 to 50° C. with the condensate flowing back into the countercurrent reactor (1),—the product phase which is not condensed in the condenser (5) is passed to the 15 condensation unit (8) which is operated at a temperature in the range from −40 to −110° C.,—the volatile product phase from the condensation unit (8) is fed to the distillation column (9) which is operated at a temperature in the range from −60 to −170° C. and monosilane (C) is discharged at the top of the distillation column (9), 20—the SiCl4-containing bottoms from the countercurrent reactor (1) are brought to a temperature in the range from 60 to 110° C. in the vaporizer unit (6) and—bottom product from the vaporizer (6) is conveyed via a heat exchanger (7) into the double wall (2) of the countercurrent reactor (1) and the SiCl4-containing product stream (B) is discharged at a level in the upper region of the reactor (1).

    摘要翻译： 本发明涉及一种在操作温度和1至50巴绝对压力下通过三氯硅烷的催化分解连续生产甲硅烷和四氯硅烷的设备和方法。 在根据权利要求1的设备中，其中在热交换器（7）中预热三氯硅烷（A），并送入设有催化剂（3）的10逆流反应器（1）， - 形成在 逆流反应器（1）通过冷凝器（5）至少部分地在-25至50℃的温度范围内冷凝，冷凝物流回到逆流反应器（1）中，产物相位 在冷凝器（5）中未冷凝的冷凝单元（8）在-40至-110℃的温度范围内运行， - 来自冷凝单元（8）的挥发性产物相 进料到在-60至-70℃范围内操作的蒸馏塔（9）中，并且甲硅烷（C）在蒸馏塔（9）的顶部排出，20- SiCl 4 - 来自逆流反应器（1）的含底部物质在蒸发器单元（6）中的温度范围为60至110℃，-toto 来自蒸发器（6）的产物经由热交换器（7）输送到逆流反应器（1）的双壁（2）中，并且含SiCl4的产物流（B）在上部区域中被排出 的反应器（1）。