摘要:
An illumination system and a projection objective of a mask inspection apparatus are provided. During operation of the mask inspection apparatus, the illumination system illuminates a mask with an illumination bundle of rays having a centroid ray that has a direction dependent on the location of the incidence of the illumination bundle of rays on the mask.
摘要:
An illumination system and a projection objective of a mask inspection apparatus are provided. During operation of the mask inspection apparatus, the illumination system illuminates a mask with an illumination bundle of rays having a centroid ray that has a direction dependent on the location of the incidence of the illumination bundle of rays on the mask.
摘要:
An illumination system for a microlithography projection exposure apparatus for illuminating an illumination field with the light from a primary light source has a variably adjustable pupil shaping unit for receiving light from the primary light source and for generating a variably adjustable two-dimensional intensity distribution in a pupil shaping surface of the illumination system. The pupil shaping unit has a Fourier optical system for converting an entrance beam bundle entering through an entrance plane of the Fourier optical system into an exit beam bundle exiting from an exit plane of the Fourier optical system. The Fourier optical system has a focal length fFOS and a structural length L measured between an entrance-side first system surface and an exit-side last system surface along an optical axis, where (L/fFOS)
摘要:
An illumination system for a microlithography projection exposure apparatus for illuminating an illumination field with the light from a primary light source has a variably adjustable pupil shaping unit for receiving light from the primary light source and for generating a variably adjustable two-dimensional intensity distribution in a pupil shaping surface of the illumination system. The pupil shaping unit has a Fourier optical system for converting an entrance beam bundle entering through an entrance plane of the Fourier optical system into an exit beam bundle exiting from an exit plane of the Fourier optical system. The Fourier optical system has a focal length fFOS and a structural length L measured between an entrance-side first system surface and an exit-side last system surface along an optical axis, where (L/fFOS)
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
An illumination system including an optical element, such as an optical filter, which can influence the optical properties of radiation impinging thereon is disclosed. Such a filter can have a variably adjustable absorption. The illumination system is employed for instance within a lithography apparatus. A method for the production of microelectronic components and an optical element influencing the optical properties of radiation impinging thereon are also disclosed.
摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system comprises illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
The invention relates to pyrimidines suitable as substrates for O6-alkylguanine-DNA alkyltransferases (AGT) of formula (I) wherein R1 is hydrogen, lower alkyl, halogen, cyano, trifluoromethyl or azido; R2 is a linker; and L is a label or a plurality of same or different labels. The invention further relates to methods of transferring a label from pyrimidines of formula (I) to O6-alkylguanine-DNA alkyltransferases (AGT) and AGT fusion proteins.
摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane; disposing a substrate carrying a resist in a region of the image plane and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.