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    Gas driven rotating susceptor for rapid thermal processing (RTP) system
    3.
    发明授权
    Gas driven rotating susceptor for rapid thermal processing (RTP) system 有权
    用于快速热处理（RTP）系统的气体驱动旋转感受器

    公开(公告)号：US06449428B2

    公开(公告)日：2002-09-10

    申请号：US09209735

    申请日：1998-12-11

    申请人： Helmut Aschner ,  Andreas Hauke ,  Karsten Weber ,  Dieter Zernickel

    发明人： Helmut Aschner ,  Andreas Hauke ,  Karsten Weber ,  Dieter Zernickel

    IPC分类号： F27D1100

    CPC分类号： H01L21/67115 ,  C30B25/12 ,  C30B31/14

    摘要： Air bearings support a rotating wafer carrying base in an RTP system. The base in proximity to the air bearing is protected from warping due to absorption of radiation from the hot wafer being treated. The most preferred embodiment splits the base into an inner disk carrying the wafer and an outer ring, where the inner ring which absorbs the most energy contacts and is supported at three points by the outer disk which is supported by the air bearing.

    摘要翻译： 空气轴承支持RTP系统中旋转的晶片承载基座。 靠近空气轴承的基座由于吸收来自被处理的热晶片的辐射而受到保护，防止翘曲。 最优选的实施例将基座分割成承载晶片的内圆盘和外环，其中吸收最多能量的内圈接触并由由空气轴承支撑的外盘在三个点处支撑。

    Method and apparatus device for the heat treatment of substrates
    4.
    发明授权
    Method and apparatus device for the heat treatment of substrates 有权
    用于基材热处理的方法和装置

    公开(公告)号：US06752625B1

    公开(公告)日：2004-06-22

    申请号：US09700577

    申请日：2000-11-13

    申请人： Helmut Aschner ,  Patrick Schmid ,  Dieter Zernickel

    发明人： Helmut Aschner ,  Patrick Schmid ,  Dieter Zernickel

    IPC分类号： F27D500

    CPC分类号： H01L21/67115

    摘要： The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.

    摘要翻译： 本发明涉及一种用于基板，特别是半导体晶片的热处理的装置和方法。 该装置包括具有补偿元件的反应室。 根据本发明，通过补偿元件（15）可以在反应室中至少部分地降低和/或升高的事实，可以更容易地将衬底插入和抽出。

    Device and method for the reduction of particles in the thermal treatment of rotating substrates
    5.
    发明申请
    Device and method for the reduction of particles in the thermal treatment of rotating substrates 审中-公开
    用于在旋转基板的热处理中减少颗粒的装置和方法

    公开(公告)号：US20070098904A1

    公开(公告)日：2007-05-03

    申请号：US11440796

    申请日：2006-05-25

    申请人： Helmut Aschner ,  Patrick Schmid ,  Thomas Theiler ,  Ottmar Heudorfer ,  Karsten Weber ,  Conor O'Carroll

    发明人： Helmut Aschner ,  Patrick Schmid ,  Thomas Theiler ,  Ottmar Heudorfer ,  Karsten Weber ,  Conor O'Carroll

    IPC分类号： B05D3/02 ,  H01L21/00

    CPC分类号： H01L21/67115 ,  F27B5/04 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/324 ,  H01L21/6719 ,  H01L21/68792

    摘要： A device and a method for reducing particle exposure to substrates during thermal treatment are disclosed. Semiconductor wafers may be rotated on a device within a process chamber divided into two partial chambers such that a first partial chamber contains the substrate to be thermally treated and a second partial chamber contains at least parts of the rotation device. Between the partial chambers, a flow of gas is set such that gas from the second partial chamber is substantially prevented from passing into the first partial chamber. In this way, particles which are produced by rotation abrasion in the second partial chamber are largely prevented from passing onto the substrate to be thermally treated. This device and this method are particularly advantageous if the rotation is realized by means of a gas drive, wherein the gas used for the rotation can be introduced directly into the second partial chamber.

    摘要翻译： 公开了一种用于在热处理期间减少颗粒暴露于基板的装置和方法。 半导体晶片可以在分成两个部分室的处理室内的装置上旋转，使得第一部分室包含待热处理的基板，并且第二部分室至少包含旋转装置的一部分。 在部分室之间，设置气流，使得基本上防止来自第二部分室的气体进入第一部分室。 以这种方式，通过第二部分室中的旋转磨损产生的颗粒被大大地防止被传递到待热处理的基板上。 如果通过气体驱动实现旋转，则该装置和该方法是特别有利的，其中用于旋转的气体可以直接引入第二部分室。