PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY
    1.
    发明申请
    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY 有权
    投影目标的微观算法

    公开(公告)号:US20100201959A1

    公开(公告)日:2010-08-12

    申请号:US12723496

    申请日:2010-03-12

    IPC分类号: G03B27/52

    摘要: A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

    摘要翻译: 用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。 光学组件包括靠近图像平面设置的至少一个光学终端元件。 第一浸没液体设置在光学终端元件的图像取向表面上。 第二浸没液体设置在光学终端元件的物体取向表面上。 面向对象的表面包括用于成像光进入端子元件的第一表面部分,并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    2.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号:US20090073398A1

    公开(公告)日:2009-03-19

    申请号:US12210514

    申请日:2008-09-15

    IPC分类号: G03B27/52 G03B27/72

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Projection objective for microlithography
    3.
    发明授权
    Projection objective for microlithography 有权
    微光刻的投影目标

    公开(公告)号:US08436982B2

    公开(公告)日:2013-05-07

    申请号:US12723496

    申请日:2010-03-12

    IPC分类号: G03B27/54 G03B27/52 G03B27/42

    摘要: A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

    摘要翻译: 用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。 光学组件包括靠近图像平面设置的至少一个光学终端元件。 第一浸没液体设置在光学终端元件的图像取向表面上。 第二浸没液体设置在光学终端元件的物体取向表面上。 面向对象的表面包括用于成像光进入端子元件的第一表面部分,并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    4.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号:US20120092637A1

    公开(公告)日:2012-04-19

    申请号:US13333350

    申请日:2011-12-21

    IPC分类号: G03B27/54

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Microlithographic projection exposure apparatus
    5.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号:US08107054B2

    公开(公告)日:2012-01-31

    申请号:US12210514

    申请日:2008-09-15

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Microlithographic projection exposure apparatus
    6.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号:US08982325B2

    公开(公告)日:2015-03-17

    申请号:US13333350

    申请日:2011-12-21

    IPC分类号: G03F7/20

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Illumination system or projection lens of a microlithographic exposure system
    10.
    发明授权
    Illumination system or projection lens of a microlithographic exposure system 有权
    微光曝光系统的照明系统或投影透镜

    公开(公告)号:US08031326B2

    公开(公告)日:2011-10-04

    申请号:US12042621

    申请日:2008-03-05

    IPC分类号: G03B27/54 G03B27/72

    摘要: In some embodiments, the disclosure provides an optical system, in particular an illumination system or a projection lens of a microlithographic exposure system, having an optical system axis and at least one element group including three birefringent elements each of which includes optically uniaxial material and having an aspheric surface, wherein a first birefringent element of the group has a first orientation of its optical crystal axis, a second birefringent element of the group has a second orientation of its optical crystal axis, wherein the second orientation can be described as emerging from a rotation of the first orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof, and a third birefringent element of the group has a third orientation of its optical crystal axis, wherein the third orientation can be described as emerging from a rotation of the second orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof.

    摘要翻译: 在一些实施例中,本公开提供了一种光学系统,特别是微光刻曝光系统的照明系统或投影透镜,其具有光学系统轴线和包括三个双折射元件的至少一个元件组,每个元件组包括光学单轴材料并具有 非球面表面,其中该组的第一双折射元件具有其光学晶体轴的第一取向,该组的第二双折射元件具有其光学晶轴的第二取向,其中第二取向可被描述为从 第一取向的旋转,旋转不对应于围绕光学系统轴的旋转90°的角度或其整数倍,并且该组的第三双折射元件具有其光学晶轴的第三取向,其中, 可以将第三取向描述为从第二取向旋转而出现,旋转不对准 以围绕光学系统轴旋转90°的角度或其整数倍。