公开(公告)号：US08436982B2

公开(公告)日：2013-05-07

申请号：US12723496

申请日：2010-03-12

申请人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

发明人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

IPC分类号： G03B27/54 ,  G03B27/52 ,  G03B27/42

CPC分类号： G03F7/70341 ,  G02B1/02 ,  G02B21/33 ,  G03F7/70941

摘要： A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

摘要翻译： 用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。 光学组件包括靠近图像平面设置的至少一个光学终端元件。 第一浸没液体设置在光学终端元件的图像取向表面上。 第二浸没液体设置在光学终端元件的物体取向表面上。 面向对象的表面包括用于成像光进入端子元件的第一表面部分，并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

公开(公告)号：US20120092637A1

公开(公告)日：2012-04-19

申请号：US13333350

申请日：2011-12-21

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03B27/54

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US08107054B2

公开(公告)日：2012-01-31

申请号：US12210514

申请日：2008-09-15

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03B27/72 ,  G03B27/68 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54 ,  G03B27/32

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US20100201959A1

公开(公告)日：2010-08-12

申请号：US12723496

申请日：2010-03-12

申请人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

发明人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

IPC分类号： G03B27/52

CPC分类号： G03F7/70341 ,  G02B1/02 ,  G02B21/33 ,  G03F7/70941

摘要： A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

摘要翻译： 用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。 光学组件包括靠近图像平面设置的至少一个光学终端元件。 第一浸没液体设置在光学终端元件的图像取向表面上。 第二浸没液体设置在光学终端元件的物体取向表面上。 面向对象的表面包括用于成像光进入端子元件的第一表面部分，并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

公开(公告)号：US20090073398A1

公开(公告)日：2009-03-19

申请号：US12210514

申请日：2008-09-15

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03B27/52 ,  G03B27/72

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US08982325B2

公开(公告)日：2015-03-17

申请号：US13333350

申请日：2011-12-21

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03F7/20

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US08319944B2

公开(公告)日：2012-11-27

申请号：US12825001

申请日：2010-06-28

申请人： Helmut Beierl ,  Sascha Bleidistel ,  Wolfgang Singer ,  Toralf Gruner ,  Alexander Epple ,  Norbert Wabra ,  Susanne Beder ,  Jochen Weber ,  Heiko Feldmann ,  Baerbel Schwaer ,  Olaf Rogalsky ,  Ari Kazi

发明人： Helmut Beierl ,  Sascha Bleidistel ,  Wolfgang Singer ,  Toralf Gruner ,  Alexander Epple ,  Norbert Wabra ,  Susanne Beder ,  Jochen Weber ,  Heiko Feldmann ,  Baerbel Schwaer ,  Olaf Rogalsky ,  Ari Kazi

IPC分类号： G03B27/42 ,  G03B27/52

CPC分类号： G03F7/70341 ,  G03F7/70891

摘要： A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

摘要翻译： 微光刻投影曝光装置包括将物体成像到平面上并具有弯曲表面的透镜的投影物镜。 在投影物镜中，存在液体或固体介质，其直接邻接可用于成像物体的区域上的曲面。 投影曝光装置还具有可调节的操纵器，用于降低在投影操作期间由介质的加热引起的图像场曲率。

公开(公告)号：US07848031B2

公开(公告)日：2010-12-07

申请号：US11795598

申请日：2006-01-20

申请人： Jochen Hetzler ,  Susanne Beder ,  Heiko Feldmann

发明人： Jochen Hetzler ,  Susanne Beder ,  Heiko Feldmann

IPC分类号： G02B3/02

CPC分类号： G01B9/021 ,  G01B9/02039 ,  G01B11/2441

摘要： A method of manufacturing an optical element (5) comprises testing an optical surface (3) of the optical element, using an interferometer 1a directing measuring light (23a) onto the optical surface wherein the measuring light traverses two successive holograms (44, 48) disposed in the beam path of the measuring light upstream of the optical surface.

摘要翻译： 一种制造光学元件（5）的方法包括使用将测量光（23a）引导到光学表面上的干涉仪1a来测试光学元件的光学表面（3），其中测量光穿过两个连续的全息图（44,48） 设置在光学表面上游的测量光束的光束路径中。

公开(公告)号：US20100265478A1

公开(公告)日：2010-10-21

申请号：US12825001

申请日：2010-06-28

申请人： Helmut Beierl ,  Sascha Bleidistel ,  Wolfgang Singer ,  Toralf Gruner ,  Alexander Epple ,  Norbert Wabra ,  Susanne Beder ,  Jochen Weber ,  Heiko Feldmann ,  Bärbel Schwaer ,  Olaf Rogalsky ,  Arif Kazi

发明人： Helmut Beierl ,  Sascha Bleidistel ,  Wolfgang Singer ,  Toralf Gruner ,  Alexander Epple ,  Norbert Wabra ,  Susanne Beder ,  Jochen Weber ,  Heiko Feldmann ,  Bärbel Schwaer ,  Olaf Rogalsky ,  Arif Kazi

IPC分类号： G03B27/68

CPC分类号： G03F7/70341 ,  G03F7/70891

摘要： A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

摘要翻译： 微光刻投影曝光装置包括将物体成像到平面上并具有弯曲表面的透镜的投影物镜。 在投影物镜中，存在液体或固体介质，其直接邻接可用于成像物体的区域上的曲面。 投影曝光装置还具有可调节的操纵器，用于降低在投影操作期间由介质的加热引起的图像场曲率。

公开(公告)号：US07782440B2

公开(公告)日：2010-08-24

申请号：US11719074

申请日：2005-11-17

申请人： Helmut Beierl ,  Sascha Bleidistel ,  Wolfgang Singer ,  Toralf Gruner ,  Alexander Epple ,  Norbert Wabra ,  Susanne Beder ,  Jochen Weber ,  Heiko Feldmann ,  Baerbel Schwaer ,  Olaf Rogalsky ,  Ari Kazi

发明人： Helmut Beierl ,  Sascha Bleidistel ,  Wolfgang Singer ,  Toralf Gruner ,  Alexander Epple ,  Norbert Wabra ,  Susanne Beder ,  Jochen Weber ,  Heiko Feldmann ,  Baerbel Schwaer ,  Olaf Rogalsky ,  Ari Kazi

IPC分类号： G03B27/52 ,  G03B27/42

CPC分类号： G03F7/70341 ,  G03F7/70891

摘要： A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

摘要翻译： 微光刻投影曝光装置包括将物体成像到平面上并具有弯曲表面的透镜的投影物镜。 在投影物镜中，存在液体或固体介质，其直接邻接可用于成像物体的区域上的曲面。 投影曝光装置还具有可调节的操纵器，用于降低在投影操作期间由介质的加热引起的图像场曲率。