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14 条记录 (耗时 0.02 秒)

    Method and apparatus for drawing crystalline bodies from a melt
    1.
    发明授权
    Method and apparatus for drawing crystalline bodies from a melt 失效
    从熔体中提取晶体的方法和装置

    公开(公告)号：US4557793A

    公开(公告)日：1985-12-10

    申请号：US573729

    申请日：1984-01-25

    申请人： Helmut Foell ,  Josef Grabmaier ,  Juergen Schneider

    发明人： Helmut Foell ,  Josef Grabmaier ,  Juergen Schneider

    IPC分类号： C30B15/24 ,  C30B15/34

    CPC分类号： C30B15/34 ,  Y10S117/90 ,  Y10T117/104 ,  Y10T117/1044

    摘要： This invention involves a method and apparatus for drawing crystalline bodies from a melt by means of an open-ended drawing nozzle which determines the cross-sectional geometry of the crystalline body. The drawing nozzle is composed of a material which is resistant to the melt. The feed of melt proceeds from a reservoir situated at the lower end of the drawing nozzle and the melt is conveyed to the upper opening thereof by capillary action. In keeping with the present invention, there is provided a drawing nozzle which has an upper opening merging into a contoured surface such that the meniscus formed at the interface between the crystalline and molten phases is freely displaceable on the contoured surface into which the upper opening discharges.

    摘要翻译： 本发明涉及一种用于通过确定晶体的横截面几何形状的开口绘图喷嘴从熔体中提取晶体的方法和装置。 拉丝喷嘴由耐熔融材料构成。 熔体进料来自位于拉伸喷嘴下端的储存器，熔体通过毛细管作用输送到其上部开口。 根据本发明，提供了一种绘图喷嘴，其具有合并成轮廓表面的上部开口，使得在结晶相和熔融相之间的界面处形成的弯液面可以在上部开口排出的轮廓表面上自由移动 。

    Device for manufacturing large-surface, tape-shaped silicon bodies for solar cells
    2.
    发明授权
    Device for manufacturing large-surface, tape-shaped silicon bodies for solar cells 失效
    用于制造太阳能电池的大面积，带状硅体的装置

    公开(公告)号：US4563976A

    公开(公告)日：1986-01-14

    申请号：US512733

    申请日：1983-07-11

    申请人： Helmut Foell ,  Josef Grabmaier ,  Richard Falckenberg

    发明人： Helmut Foell ,  Josef Grabmaier ,  Richard Falckenberg

    IPC分类号： C30B15/06 ,  C30B15/00 ,  C30B29/06 ,  B05C3/15 ,  B05C11/02

    CPC分类号： C30B15/007 ,  Y10S117/903 ,  Y10T117/1048 ,  Y10T117/1056

    摘要： In an exemplary embodiment, tape-shaped silicon bodies for solar cells are formed by continuous coating of a carrier body having a mesh structure. A melt bath receives the silicon melt and has a floor part with capillary openings therein for supplying the melt, the capillary openings leading perpendicularly toward the exterior of the vat and proceeding parallel to one another, and wherein a channel for the guidance of the carrier body proceeding in a horizontal direction is disposed below the melt vat in the region of the capillary openings. The guide channel for the carrier body can also be disposed above a body with capillaries proceeding parallel in a vertical direction, the body being partially immersed in the vat containing the silicon melt for the purpose of supplying the melt via the capillaries. The devices enable continuous tape drawing from a silicon melt wherein convection currents are avoided in the melt.

    摘要翻译： 在一个示例性实施例中，用于太阳能电池的带状硅体通过具有网状结构的载体主体的连续涂覆而形成。 熔体槽容纳硅熔体并且具有用于供应熔体的毛细管开口的底部部件，毛细管开口垂直朝向槽的外部引导并且彼此平行地延伸，并且其中用于引导载体主体的通道 沿着水平方向延伸设置在毛细管开口区域内的熔体槽的下方。 用于承载体的引导通道也可以设置在主体上方，毛细管沿垂直方向平行地延伸，该主体部分地浸入含有硅熔体的槽中，以便通过毛细管供应熔体。 这些装置能够从硅熔体连续地进行拉制，其中在熔体中避免对流。

    Device for asymmetrically coating a tape-shaped carrier body with silicon for further processing into solar cells
    4.
    发明授权
    Device for asymmetrically coating a tape-shaped carrier body with silicon for further processing into solar cells 失效
    用于用硅非对称地涂覆带状载体的装置，用于进一步加工成太阳能电池

    公开(公告)号：US4505221A

    公开(公告)日：1985-03-19

    申请号：US512756

    申请日：1983-07-11

    申请人： Richard Falckenberg ,  Helmut Foell ,  Josef Grabmaier

    发明人： Richard Falckenberg ,  Helmut Foell ,  Josef Grabmaier

    IPC分类号： C30B15/06 ,  C30B15/00 ,  C30B15/34 ,  C30B29/06 ,  B05C3/15 ,  B05C11/02

    CPC分类号： C30B15/007 ,  Y10S118/02

    摘要： Apparatus and method for asymmetrically coating a tape-shaped carrier body with crystallized silicon for further processing into solar cells. In an exemplary embodiment a carrier body in the form of a graphite mesh is to be drawn through a guide channel leading from the floor of a melt vat and is moistened by the melt. The silicon is caused to crystallize above the melt vat because of a temperature gradient generated at right angles relative to the path of the coated carrier body. The temperature gradient can, for example, be produced by means of single-sided heating, or by a plate-shaped body extending from the melt parallel to the carrier body, or by guide lips with upper boundaries exhibiting different heights and widths. The method and apparatus serve for the continuous manufacture of silicon tapes for solar cells.

    摘要翻译： 用于用结晶硅不对称地涂覆带状载体的装置和方法，用于进一步加工成太阳能电池。 在一个示例性实施例中，石墨网形式的承载体将通过从熔体槽的地板引导并且被熔体润湿的引导通道被拉伸。 由于相对于涂覆的载体主体的路径以直角产生的温度梯度，使硅在熔体槽之上结晶。 温度梯度可以例如通过单面加热产生，或者由平行于载体的熔体延伸的板状体，或具有不同高度和宽度的上边界的引导唇产生。 该方法和装置用于连续制造太阳能电池用硅胶带。

    Method for Fast Macropore Etching in n-Type Silicon
    5.
    发明申请
    Method for Fast Macropore Etching in n-Type Silicon 失效
    在n型硅中快速大孔蚀刻的方法

    公开(公告)号：US20110294302A1

    公开(公告)日：2011-12-01

    申请号：US12921035

    申请日：2009-02-28

    申请人： Emmanuel Ossei-Wusu ,  Ala Cojocaru ,  Juergen Carstensen ,  Helmut Foell

    发明人： Emmanuel Ossei-Wusu ,  Ala Cojocaru ,  Juergen Carstensen ,  Helmut Foell

    IPC分类号： H01L21/3063

    CPC分类号： H01L21/3063 ,  C25F3/12

    摘要： Method for the electrochemical etching of macropores in n-type silicon wafers, using illumination of the wafer reverse sides and using an aqueous electrolyte, characterized in that the electrolyte is an aqueous acetic acid solution with the composition of H2O: CH3COOH in the range between 2:1 and 7:3, with an addition of at least 9 percent by weight hydrofluoric acid.

    摘要翻译： 用于在n型硅晶片中电化学蚀刻大孔的方法，使用晶片反面的照射和使用含水电解质，其特征在于电解质是乙酸水溶液，其组成为H 2 O：CH 3 COOH，范围为2 ：1和7：3，加入至少9重量％的氢氟酸。

    Method for topically-resolved determination of the diffusion length of minority charge carriers in a semiconductor crystal body with the assistance of an electrolytic cell
    8.
    发明授权
    Method for topically-resolved determination of the diffusion length of minority charge carriers in a semiconductor crystal body with the assistance of an electrolytic cell 失效
    借助于电解槽来局部地确定半导体晶体中的少数载流子的扩散长度的方法

    公开(公告)号：US5010294A

    公开(公告)日：1991-04-23

    申请号：US522115

    申请日：1990-05-11

    申请人： Helmut Foell ,  Volker Lehmann

    发明人： Helmut Foell ,  Volker Lehmann

    IPC分类号： G01N21/00 ,  G01R31/265 ,  H01L21/66

    CPC分类号： G01R31/2656

    摘要： The measurement of the diffusion length of minority charge carriers in a semiconductor crystal body is enabled in that the front side and the rear side of the crystal wafer are each respectively brought into contact with an electrolyte in a respective measuring cell and an inhibiting space charge zone is generated at the front side of the wafer. The front side is irradiated with light having a wave length of .lambda.>800 nm and the front side photocurrent I.sub.1 of the minority charge carriers thereby generated is measured. The diffusion length L can be calculated from the photocurrent I.sub.1 with the assistance of a mathematical equation. The topical distribution of the diffusion length L is obtained given point-by-point irradiation and scanning over the crystal wafer. Diffusion lengths of L 800 nm.

    摘要翻译： 半导体晶体中的少数电荷载流子的扩散长度的测量可以在晶体晶片的前侧和后侧分别与各个测量单元中的电解质和抑制空间电荷区接触 在晶片的前侧产生。 用波长> 800nm的光照射正面，测定由此产生的少数电荷载流子的前侧光电流I1。 借助于数学方程，可以从光电流I1计算扩散长度L. 通过逐点照射和晶体晶片上的扫描获得扩散长度L的局部分布。 可以通过选择波长> 800nm的光源来测量L <150μm的扩散长度。

    Method and apparatus for large-area electrical contacting of a semiconductor crystal body with the assistance of electrolytes
    9.
    发明授权
    Method and apparatus for large-area electrical contacting of a semiconductor crystal body with the assistance of electrolytes 失效
    电解质辅助半导体晶体的大面积电接触方法与装置

    公开(公告)号：US5209833A

    公开(公告)日：1993-05-11

    申请号：US527277

    申请日：1990-05-22

    申请人： Helmut Foell ,  Volker Lehmann

    发明人： Helmut Foell ,  Volker Lehmann

    IPC分类号： H01L21/66 ,  G01R31/265

    CPC分类号： G01R31/2656

    摘要： A semiconductor crystal wafer is fixed between two electrolyte-filled cells so that the front surface and rear surface thereof are respectively in contact with an electrolyte. A respective electrode is located in the electrolyte, a DC voltage being applied between these electrodes so that the semiconductor-to-electrolyte contact of the one cell is polarized in the conducting direction and the other is polarized in the non-conducting direction. A current flow through the semiconductor crystal body is enabled in that the inhibiting surface of the semiconductor crystal is illuminated and charge carriers are generated as a result thereof. On the basis of the selection of suitable electrolytes and the intensity of illumination, high current density is possible even given high-impedance semiconductor crystal wafers as well as semiconductor crystal bodies having doping steps or pn junctions. The method is particularly simple in many semiconductor processing and analyses methods.

    摘要翻译： 将半导体晶体晶片固定在两个电解质填充单元之间，使其前表面和后表面分别与电解质接触。 相应的电极位于电解质中，在这些电极之间施加直流电压，使得一个电池的半导体与电解质的接触在导电方向上极化，另一个在非导通方向上极化。 通过半导体晶体的电流可以被实现，因为半导体晶体的抑制表面被照亮，因此产生电荷载流子。 在选择合适的电解质和照明强度的基础上，即使给出高阻抗半导体晶体晶片以及具有掺杂步骤或pn结的半导体晶体，也可以实现高电流密度。 该方法在许多半导体处理和分析方法中特别简单。

    Method and measuring instrument for identifying the diffusion length of the minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies
    10.
    发明授权
    Method and measuring instrument for identifying the diffusion length of the minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies 失效
    用于识别少数电荷载体的扩散长度的方法和测量仪器用于半导体晶体中缺陷和杂质的非​​破坏性检测

    公开(公告)号：US4841239A

    公开(公告)日：1989-06-20

    申请号：US197603

    申请日：1988-05-20

    申请人： Helmut Foell ,  Volker Lehmann

    发明人： Helmut Foell ,  Volker Lehmann

    IPC分类号： G01N27/00 ,  G01R31/265 ,  H01L21/66

    CPC分类号： G01R31/265

    摘要： Method and measuring instrument for identifying the diffusion length of minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies. The method provides that the semiconductor crystal body is positioned between two electrolyte-filled measuring chamber halves and that the minority charge carriers of the photocurrent that results at a front side of the semiconductor crystal body due to irradiation is detected by an applied constant voltage between a backside of the semiconductor crystal body and a rear electrolyte at the backside of the semiconductor crystal body. Taking the thickness (D) of the semiconductor crystal body into consideration, the diffusion length (L) can be calculated from a mathematical equation using the quotient of the minority charge carrier current I.sub.G I/.sub.O occurring at the backside and at the front side of the semiconductor crystal body. The method provides topically resolved measurements for irradiation of the semiconductor crystal body. A measuring instrument for the implementation of the method is disclosed. The method can be used for determining the quality of semiconductor crystals.

    摘要翻译： 用于识别少数电荷载体的扩散长度的方法和测量仪器用于半导体晶体中缺陷和杂质的非​​破坏性检测。 该方法提供半导体晶体位于两个电解质填充的测量室半部之间，并且通过施加的恒定电压来检测由于照射而导致半导体晶体的前侧的光电流的少数电荷载流子 半导体晶体的背面和半导体晶体的背面的后电解质。 考虑到半导体晶体的厚度（D），扩散长度（L）可以从数学方程式使用在后侧和前面出现的少数载流子电流IGI / O的商来计算 半导体晶体。 该方法提供用于半导体晶体的照射的局部分辨测量。 公开了一种用于实施该方法的测量仪器。 该方法可用于确定半导体晶体的质量。