公开(公告)号：US4903112A

公开(公告)日：1990-02-20

申请号：US212365

申请日：1988-06-22

申请人： Helmut Strack ,  Gottfried Schuh

发明人： Helmut Strack ,  Gottfried Schuh

IPC分类号： H01L29/78 ,  H01L21/285 ,  H01L21/331 ,  H01L21/336 ,  H01L23/485 ,  H01L29/08 ,  H01L29/41 ,  H01L29/73

CPC分类号： H01L29/0847 ,  H01L21/28531 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S257/914

摘要： A semiconductor component. The semiconductor component has two superimposed semiconductor layers of different conduction materials. An upper layer is provided with an opening through which a lower layer is exposed. A space saving scheme for connecting electrically the two layers is provided, by depositing a connecting layer which contacts the upper layer at an edge only and the lower layer is contacted at its depth where its doping material maximum is located. This requires a doping equal to or greater than 10.sup.19 cm.sup.-3 for the upper layer, which is dependent on thickness.

摘要翻译： 半导体元件。 半导体元件具有不同导电材料的两个重叠的半导体层。 上层设置有暴露下层的开口。 通过沉积仅在边缘处接触上层的连接层，并且下层在其最大掺杂材料所在的深度处接触来提供用于连接两层电气的节省空间的方案。 对于上层，这需要等于或大于1019cm-3的掺杂，其取决于厚度。

公开(公告)号：US4096623A

公开(公告)日：1978-06-27

申请号：US760272

申请日：1977-01-18

申请人： Alfred Porst ,  Gottfried Schuh

发明人： Alfred Porst ,  Gottfried Schuh

IPC分类号： H01L21/00 ,  H01L29/00 ,  H01L29/417 ,  H01L33/00

CPC分类号： H01L29/41716 ,  H01L21/00 ,  H01L29/00

摘要： A thyristor having current-amplifying auxiliary structures with an auxiliary emitter electrode out of contact with the contact electrode. The auxiliary emitter electrode is formed thinner than the main emitter electrode. The contact electrode is formed by simple planar techniques to have a plane surface on top of the semiconductor body.

摘要翻译： 具有电流放大辅助结构的晶闸管，其辅助发射极与接触电极不接触。 辅助发射极电极形成得比主发射电极薄。 接触电极通过简单的平面技术形成，以在半导体本体的顶部上具有平面。

公开(公告)号：US06555849B1

公开(公告)日：2003-04-29

申请号：US09711847

申请日：2000-11-13

申请人： Gottfried Schuh ,  Hans-Joachim Schulze

发明人： Gottfried Schuh ,  Hans-Joachim Schulze

IPC分类号： H01L2994

CPC分类号： H01L29/41716

摘要： A thyristor includes a semiconductor body having a first emitter layer and a first base layer on an anode side, a second base layer and a second emitter layer on a cathode side, a cathode contact, and an electrically insulating insulation layer having openings. The insulation layer is disposed between the second emitter layer and the cathode contact. The openings have dimensions and spacings making the insulation layer form an electrical resistor for reducing current filamentation. A series resistor is incorporated on the cathode side and is formed by the pierced insulation layer between the cathode side metallizing, forming the terminal contact, and the doped semiconductor material of the emitter on the cathode side. The openings are preferably cylindrical. In a silicon component element, the insulation layer preferably is SiO2 or Si3N4, or a layered succession of SiO2 and Si3N4.

摘要翻译： 晶闸管包括具有第一发射极层和在阳极侧的第一基极层，阴极侧的第二基极层和第二发射极层，阴极接触部和具有开口的电绝缘绝缘层的半导体本体。 绝缘层设置在第二发射极层和阴极接触之间。 这些开口具有尺寸和间距，使得绝缘层形成用于减小电流纤维的电阻器。 串联电阻器被并入阴极侧，并且由阴极侧金属化，形成端子触点之间的穿孔绝缘层和阴极侧的发射极的掺杂半导体材料形成。 开口优选为圆柱形。 在硅组分元件中，绝缘层优选为SiO 2或Si 3 N 4，或SiO 2和Si 3 N 4的分层连续。

公开(公告)号：US5079175A

公开(公告)日：1992-01-07

申请号：US629312

申请日：1990-12-18

申请人： Gottfried Schuh ,  Hans-Joachim Schulze

发明人： Gottfried Schuh ,  Hans-Joachim Schulze

IPC分类号： H01L29/74 ,  H01L21/28 ,  H01L21/332

CPC分类号： H01L29/66363 ,  H01L21/28 ,  Y10S148/14

摘要： Short circuits on the anode side of thyristors can be manufactured easily d inexpensively if a p-doped layer is first generated on the anode side. On it, after an oxide masking and structuring process, grooves (7) are produced, which extend into the base zone (1) of the thyristor on the anode side, in which the short-circuit areas are then generated. After the oxide has been removed, the anode electrode is applied, which contacts the p-doped layer and the short-circuit areas. As an alternative, the short-circuit areas may also be generated first through the openings of a structured oxide. Then, after removal of the oxide, the entire surface is p-doped, with the doping being less than that of the short-circuit areas. Then the anode electrode is applied.

摘要翻译： 如果在阳极侧首先产生p掺杂层，则可以容易且廉价地制造晶闸管的阳极侧的短路。 在此之后，在氧化物掩蔽和结构化处理之后，产生延伸到阳极侧的晶闸管的基极区域（1）中的凹槽（7），在该区域中产生短路区域。 在氧化物被去除之后，施加阳极电极，其接触p掺杂层和短路区域。 作为替代，也可以首先通过结构化氧化物的开口产生短路区域。 然后，在去除氧化物之后，整个表面是p掺杂的，掺杂小于短路区域的掺杂。 然后施加阳极电极。

公开(公告)号：US4502069A

公开(公告)日：1985-02-26

申请号：US258367

申请日：1981-04-28

申请人： Gottfried Schuh

发明人： Gottfried Schuh

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/41 ,  H01L29/78 ,  H01L29/06 ,  H01L23/48 ,  H01L29/44

CPC分类号： H01L21/76802 ,  H01L21/28512 ,  H01L29/7802 ,  H01L29/41766

摘要： An MIS-semiconductor component, includes a substrate having a surface, a first zone of a given first conductivity type embedded in the substrate, a second zone of a given second conductivity type embedded in the first zone, at least one insulating layer disposed on the substrate surface, a contact, and an auxiliary zone surrounding at least part of the contact and being of the second conductivity type and more heavily doped than the second zone. The at least one insulating layer and the second zone have a hole formed therein. The contact is connected to the first zone through the hole and is electrically connected to the second zone through the hole and the auxiliary zone.

摘要翻译： 一种MIS半导体部件，包括具有表面的基板，嵌入在所述基板中的给定第一导电类型的第一区域，嵌入在所述第一区域中的给定第二导电类型的第二区域，设置在所述第一区域中的至少一个绝缘层 衬底表面，接触以及围绕至少部分接触并具有第二导电类型并且比第二区更重掺杂的辅助区。 所述至少一个绝缘层和所述第二区域中形成有孔。 接触件通过孔连接到第一区域，并通过孔和辅助区域电连接到第二区域。